公开(公告)号：US11879185B2

公开(公告)日：2024-01-23

申请号：US17544298

申请日：2021-12-07

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Rui Liu ,  Paul Gregory Evans ,  Donald E. Savage ,  Thomas Francis Kuech

IPC: C30B29/20 ,  C23C16/40 ,  C30B1/02

CPC classification number: C30B29/20 ,  C23C16/403 ,  C30B1/023

Abstract: Aluminum oxide (Al2O3) thin films having a high γ-phase purity and low defect density and methods for making the aluminum oxide thin films are provided. Also provided are epitaxial heterostructures that incorporate the aluminum oxide thin films as growth substrates and methods of forming the heterostructures. The Al2O3 films are pure, or nearly pure, γ-Al2O3. As such, the films contain no, or only a very low concentration of, other Al2O3 polymorph phases. In particular, the Al2O3 films contain no, or only a very low concentration of, the θ-Al2O3 polymorph phase.

公开(公告)号：US20230175169A1

公开(公告)日：2023-06-08

申请号：US17544298

申请日：2021-12-07

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Rui Liu ,  Paul Gregory Evans ,  Donald E. Savage

IPC: C30B29/20 ,  C30B1/02 ,  C23C16/40

CPC classification number: C30B29/20 ,  C30B1/023 ,  C23C16/403

Abstract: Aluminum oxide (Al2O3) thin films having a high γ-phase purity and low defect density and methods for making the aluminum oxide thin films are provided. Also provided are epitaxial heterostructures that incorporate the aluminum oxide thin films as growth substrates and methods of forming the heterostructures. The Al2O3 films are pure, or nearly pure, γ-Al2O3. As such, the films contain no, or only a very low concentration of, other Al2O3 polymorph phases. In particular, the Al2O3 films contain no, or only a very low concentration of, the θ-Al2O3 polymorph phase.