公开(公告)号：US11879185B2

公开(公告)日：2024-01-23

申请号：US17544298

申请日：2021-12-07

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Rui Liu ,  Paul Gregory Evans ,  Donald E. Savage ,  Thomas Francis Kuech

IPC: C30B29/20 ,  C23C16/40 ,  C30B1/02

CPC classification number: C30B29/20 ,  C23C16/403 ,  C30B1/023

Abstract: Aluminum oxide (Al2O3) thin films having a high γ-phase purity and low defect density and methods for making the aluminum oxide thin films are provided. Also provided are epitaxial heterostructures that incorporate the aluminum oxide thin films as growth substrates and methods of forming the heterostructures. The Al2O3 films are pure, or nearly pure, γ-Al2O3. As such, the films contain no, or only a very low concentration of, other Al2O3 polymorph phases. In particular, the Al2O3 films contain no, or only a very low concentration of, the θ-Al2O3 polymorph phase.

公开(公告)号：US12074235B2

公开(公告)日：2024-08-27

申请号：US17015428

申请日：2020-09-09

Applicant: Wisconsin Alumni Research Foundation

Inventor： Paul Gregory Evans ,  Thomas Francis Kuech ,  Donald E. Savage ,  Yajin Chen ,  Samuel Marks

IPC: B32B9/00 ,  C01G31/02 ,  C23C14/08 ,  C23C14/35 ,  C23C14/58 ,  C30B28/02 ,  H01L31/0232 ,  H01L31/08 ,  B82Y30/00 ,  B82Y40/00 ,  C30B29/30

CPC classification number: H01L31/0232 ,  C01G31/02 ,  C23C14/088 ,  C23C14/35 ,  C23C14/5806 ,  C30B28/02 ,  H01L31/085 ,  B82Y30/00 ,  B82Y40/00 ,  C01P2002/34 ,  C30B29/30

Abstract: Transparent, electrically conductive vanadium oxide-based perovskite films and methods of making the vanadium oxide-based perovskite films are provided. Transparent conducting vanadate perovskites are made by forming a layer of amorphous vanadate perovskite precursor around a plurality of nanoscale, crystalline, perovskite oxide seeds and heating the layer of amorphous vanadate perovskite precursor at a temperature that favors lateral vanadate perovskite crystal growth from the perovskite oxide seeds over homogeneous crystal nucleation within the layer of amorphous vanadate perovskite precursor material. The crystallization processes can form the desired vanadate perovskite phase directly or via a transformation in a controlled gas environment from an initial crystallized vanadate perovskite phase that has a higher oxidation state.

公开(公告)号：US20230175169A1

公开(公告)日：2023-06-08

申请号：US17544298

申请日：2021-12-07

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Rui Liu ,  Paul Gregory Evans ,  Donald E. Savage

IPC: C30B29/20 ,  C30B1/02 ,  C23C16/40

CPC classification number: C30B29/20 ,  C30B1/023 ,  C23C16/403

Abstract: Aluminum oxide (Al2O3) thin films having a high γ-phase purity and low defect density and methods for making the aluminum oxide thin films are provided. Also provided are epitaxial heterostructures that incorporate the aluminum oxide thin films as growth substrates and methods of forming the heterostructures. The Al2O3 films are pure, or nearly pure, γ-Al2O3. As such, the films contain no, or only a very low concentration of, other Al2O3 polymorph phases. In particular, the Al2O3 films contain no, or only a very low concentration of, the θ-Al2O3 polymorph phase.

公开(公告)号：US11133388B1

公开(公告)日：2021-09-28

申请号：US16936697

申请日：2020-07-23

Applicant: Wisconsin Alumni Research Foundation

Inventor： Robert J. Joynt ,  Mark G. Friesen ,  Mark A. Eriksson ,  Susan Nan Coppersmith ,  Donald E. Savage

IPC: G06N10/00 ,  G06F15/82 ,  H01L29/16 ,  H01L29/165 ,  C22C28/00 ,  H01L29/06 ,  H01L29/15 ,  B82Y10/00

Abstract: Semiconductor heterostructures, methods of making the heterostructures, and quantum dots and quantum computation devices based on the heterostructures are provided. The heterostructures include a quantum well of strained silicon seeded with a relatively low concentration of germanium impurities disposed between two quantum barriers of germanium or a silicon-germanium alloy. The quantum wells are characterized in that the germanium concentration in the wells has an oscillating profile that increases the valley splitting in the conduction band of the silicon quantum well.

公开(公告)号：US20210069999A1

公开(公告)日：2021-03-11

申请号：US17015428

申请日：2020-09-09

Applicant: Wisconsin Alumni Research Foundation

Inventor： Paul Gregory Evans ,  Thomas Francis Kuech ,  Donald E. Savage ,  Yajin Chen ,  Samuel Marks

IPC: B29D11/00 ,  C01G31/02 ,  H01L31/08 ,  H01L31/0232

Abstract: Transparent, electrically conductive vanadium oxide-based perovskite films and methods of making the vanadium oxide-based perovskite films are provided. Transparent conducting vanadate perovskites are made by forming a layer of amorphous vanadate perovskite precursor around a plurality of nanoscale, crystalline, perovskite oxide seeds and heating the layer of amorphous vanadate perovskite precursor at a temperature that favors lateral vanadate perovskite crystal growth from the perovskite oxide seeds over homogeneous crystal nucleation within the layer of amorphous vanadate perovskite precursor material. The crystallization processes can form the desired vanadate perovskite phase directly or via a transformation in a controlled gas environment from an initial crystallized vanadate perovskite phase that has a higher oxidation state.