公开(公告)号：US10388541B2

公开(公告)日：2019-08-20

申请号：US15098278

申请日：2016-04-13

Applicant: XINTEC INC.

Inventor： Yu-Tung Chen ,  Quan-Qun Su ,  Chuan-Jin Shiu ,  Chien-Hui Chen ,  Hsiao-Lan Yeh ,  Yen-Shih Ho

IPC: H01L21/56 ,  H01L21/687 ,  H01L21/67 ,  H01L23/31 ,  H01L21/768 ,  H01L21/02 ,  H01L23/00

Abstract: A wafer coating system includes a wafer chuck, a flowing insulating material sprayer and a wafer tilting lifting pin. The wafer chuck has a carrier part and a rotating part, which the carrier part is mounted on the rotating part to carry a wafer, and the rotating part is configured to rotate with a predetermined axis. The flowing insulating material sprayer is above the wafer chuck and configured to spray a flowing insulating material to the wafer, and the wafer tilting lifting pin is configured to form a first acute angle between the wafer and direction of gravity.

公开(公告)号：US09613904B2

公开(公告)日：2017-04-04

申请号：US15140289

申请日：2016-04-27

Applicant: XINTEC INC.

Inventor： Yu-Tung Chen ,  Chien-Min Lin ,  Chuan-Jin Shiu ,  Chih-Wei Ho ,  Yen-Shih Ho

IPC: H01L21/4763 ,  H01L21/44 ,  H01L23/04 ,  H01L23/52 ,  H01L23/528 ,  H01L21/027 ,  H01L23/522 ,  H01L21/768 ,  H01L23/00

CPC classification number: H01L23/5283 ,  H01L21/0271 ,  H01L21/76804 ,  H01L21/76831 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5226 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/0345 ,  H01L2224/0557

Abstract: A semiconductor structure includes a first substrate, a second substrate, a dam layer, a photoresist layer, and a conductive layer. The first substrate has a conductive pad. The second substrate has a through via, a sidewall surface surrounding the through via, a first surface, and a second surface opposite to the first surface. The through via penetrates through the first and second surfaces. The conductive pad is aligned with the through via. The dam layer is located between the first substrate and the second surface. The dam layer protrudes toward the through via. The photoresist layer is located on the first surface, the sidewall surface, the dam layer protruding toward the through via, and between the conductive pad and the dam layer protruding toward the through via. The conductive layer is located on the photoresist layer and the conductive pad.