DISPLAY PANEL AND DISPLAY APPARATUS
    4.
    发明公开

    公开(公告)号:US20230378194A1

    公开(公告)日:2023-11-23

    申请号:US18362455

    申请日:2023-07-31

    CPC classification number: H01L27/124 G06F3/0412 G06F3/04164

    Abstract: A display panel and a display apparatus are provided. A first base plate includes a first substrate, a transistor array layer, a pixel electrode layer, a common electrode layer, a first inorganic insulating layer, and a second inorganic insulating layer. The transistor array layer is provided on a side of the first substrate. The pixel electrode layer and the common electrode layer are arranged on a side of the transistor array layer away from the first substrate. The transistor array layer includes a transistor, the pixel electrode layer includes a pixel electrode, and the common electrode layer includes common electrodes. An insulating layer between the transistor array layer and one of the pixel electrode layer and the common electrode layer close to the transistor array layer is the first inorganic insulating layer. The second inorganic insulating layer is provided between the pixel electrode layer and the common electrode layer.

    DIODE AND FABRICATION METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY PANEL

    公开(公告)号:US20200212081A1

    公开(公告)日:2020-07-02

    申请号:US16653019

    申请日:2019-10-15

    Abstract: A diode and its fabrication method are provided. The diode includes a substrate, a buffer layer on a side of the substrate, a first film layer, a second film layer and a third film layer. The first film layer is a polycrystalline silicon film layer; the second film layer is an amorphous silicon film layer; and the third film layer is one of the polycrystalline silicon film layer and the amorphous silicon film layer. The diode at least includes a first portion, a second portion, a third portion, a first electrode, and a second electrode. The first portion is located in the first film layer; the second portion is located in the second film layer; and the third portion is located in the third film layer. The first electrode is electrically connected to the first portion, and the second electrode is electrically connected to the third portion.

    FORCE SENSOR, DISPLAY PANEL, FORCE DETECTION METHOD

    公开(公告)号:US20190286271A1

    公开(公告)日:2019-09-19

    申请号:US16214492

    申请日:2018-12-10

    Abstract: The present disclosure provides a force sensor, a display panel, and a force detection method. The force sensor includes a first input terminal, a second input terminal, a first output terminal, and a second output terminal. A first resistor is connected between the first input terminal and the first output terminal. A first transistor and a second transistor are connected in parallel between the first output terminal and the second input terminal. A third transistor and a fourth transistor are connected in parallel between the second input terminal and the second output terminal. A further first resistor is connected between the second output terminal and the first input terminal. An equivalent resistance of the first transistor is equal to that of the fourth transistor, and an equivalent resistance of the second transistor is equal to that of the third transistor.

    ARRAY SUBSTRATE, DISPLAY PANEL AND DISPLAY DEVICE

    公开(公告)号:US20180181249A1

    公开(公告)日:2018-06-28

    申请号:US15888555

    申请日:2018-02-05

    Abstract: An array substrate, a display panel and a display device are disclosed. The array substrate includes a base substrate, and a bias voltage applying circuit and a plurality of semiconductor pressure sensors both disposed at a side of the base substrate. The bias voltage applying circuit is electrically connected to a first power supply signal inputting terminal and a second power supply signal inputting terminal of the semiconductor pressure sensor via a first power supply signal line and a second power supply signal line, respectively, to supply a bias voltage to the semiconductor pressure sensor. A concentration of the dopant ions is higher when the related semiconductor pressure sensor is closer to the bias voltage applying circuit, so that an electrical resistance value of said semiconductor pressure sensor is lower.

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