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公开(公告)号：US07796664B2
公开(公告)日：2010-09-14
申请号：US12348061
申请日：2009-01-02
申请人： Yasuyuki Nakagawa , Harumi Nishiguchi , Kyosuke Kuramoto , Masatsugu Kusunoki , Takeo Shirahama , Yosuke Suzuki , Hiromasu Matsuoka
发明人： Yasuyuki Nakagawa , Harumi Nishiguchi , Kyosuke Kuramoto , Masatsugu Kusunoki , Takeo Shirahama , Yosuke Suzuki , Hiromasu Matsuoka
IPC分类号： H01S5/00
CPC分类号： H01S5/32341 , H01S5/028
摘要： A GaN laser, includes a coating film on a front end surface through which laser light is emitted. The coating film includes a first insulating film in contact with the front end surface and a second insulating film on the first insulating film. The optical film thickness of the second insulating film is an odd multiple of λ/4 with respect to the wavelength λ of laser light produced by the semiconductor laser. The adhesion of the first insulating film to GaN is stronger than the adhesion of the second insulating film to GaN. The refractive index of the second insulating film is 2 to 2.3 thick. The first insulating film is 10 nm or less. The first insulating film is an oxide film having a stoichiometric composition.
摘要翻译： GaN激光器包括在发射激光的前端表面上的涂膜。 涂膜包括与前端表面接触的第一绝缘膜和第一绝缘膜上的第二绝缘膜。 第二绝缘膜的光学膜厚度相对于由半导体激光器产生的激光的波长λ为λ/ 4的奇数倍。 第一绝缘膜对GaN的附着力比第二绝缘膜对GaN的粘合强。 第二绝缘膜的折射率为2〜2.3μm。 第一绝缘膜为10nm以下。 第一绝缘膜是具有化学计量组成的氧化膜。
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公开(公告)号：US20090185595A1
公开(公告)日：2009-07-23
申请号：US12348061
申请日：2009-01-02
申请人： Yasuyuki Nakagawa , Harumi Nishiguchi , Kyosuke Kuramoto , Masatsugu Kusunoki , Takeo Shirahama , Yosuke Suzuki , Hiromasu Matsuoka
发明人： Yasuyuki Nakagawa , Harumi Nishiguchi , Kyosuke Kuramoto , Masatsugu Kusunoki , Takeo Shirahama , Yosuke Suzuki , Hiromasu Matsuoka
IPC分类号： H01S5/028
CPC分类号： H01S5/32341 , H01S5/028
摘要： A GaN laser, includes a coating film on a front end surface through which laser light is emitted. The coating film includes a first insulating film in contact with the front end surface and a second insulating film on the first insulating film. The optical film thickness of the second insulating film is an odd multiple of λ/4 with respect to the wavelength λ of laser light produced by the semiconductor laser. The adhesion of the first insulating film to GaN is stronger than the adhesion of the second insulating film; to GaN. The refractive index of the second insulating film is 2 to 2.3 thick. The first insulating film is 10 nm or less. The first insulating film is an oxide film having a stoichiometric composition.
摘要翻译： GaN激光器包括在发射激光的前端表面上的涂膜。 涂膜包括与前端表面接触的第一绝缘膜和第一绝缘膜上的第二绝缘膜。 第二绝缘膜的光学膜厚度相对于半导体激光器产生的激光的波长λ为λ/ 4的奇数倍。 第一绝缘膜对GaN的附着力比第二绝缘膜的粘附强; 到GaN。 第二绝缘膜的折射率为2〜2.3μm。 第一绝缘膜为10nm以下。 第一绝缘膜是具有化学计量组成的氧化膜。
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公开(公告)号：US08625646B2
公开(公告)日：2014-01-07
申请号：US13012840
申请日：2011-01-25
CPC分类号： H01S5/0224 , H01L24/32 , H01L24/83 , H01L2224/32507 , H01L2224/83385 , H01L2924/01322 , H01S5/0202 , H01S5/02272 , H01S5/32341
摘要： A semiconductor device includes a submount; a semiconductor laser mounted on the submount via solder in a junction-down manner. The semiconductor laser includes a semiconductor substrate, a semiconductor laminated structure containing a p-n junction, on the semiconductor substrate, and an electrode on the semiconductor laminated structure and joined to the submount via the solder. A high-melting-point metal or dielectric film is located between the submount and the semiconductor laminated structure and surrounds the electrode.
摘要翻译： 一种半导体器件包括一个底座; 半导体激光器以顺时针方式通过焊料安装在基座上。 半导体激光器包括半导体衬底，在半导体衬底上包含p-n结的半导体层叠结构，以及半导体层叠结构上的电极，并且经由焊料与基座接合。 高熔点金属或电介质膜位于基座和半导体叠层结构之间并且围绕电极。
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公开(公告)号：US20110249694A1
公开(公告)日：2011-10-13
申请号：US13012840
申请日：2011-01-25
CPC分类号： H01S5/0224 , H01L24/32 , H01L24/83 , H01L2224/32507 , H01L2224/83385 , H01L2924/01322 , H01S5/0202 , H01S5/02272 , H01S5/32341
摘要： A semiconductor device includes a submount; a semiconductor laser mounted on the submount via solder in a junction-down manner. The semiconductor laser includes a semiconductor substrate, a semiconductor laminated structure containing a p-n junction, on the semiconductor substrate, and an electrode on the semiconductor laminated structure and joined to the submount via the solder. A high-melting-point metal or dielectric film is located between the submount and the semiconductor laminated structure and surrounds the electrode.
摘要翻译： 一种半导体器件包括一个底座; 半导体激光器以顺时针方式通过焊料安装在基座上。 半导体激光器包括半导体衬底，在半导体衬底上包含p-n结的半导体层叠结构，以及半导体层叠结构上的电极，并且经由焊料与基座接合。 高熔点金属或电介质膜位于基座和半导体叠层结构之间并且围绕电极。
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公开(公告)号：US08435869B2
公开(公告)日：2013-05-07
申请号：US12862829
申请日：2010-08-25
IPC分类号： H01L21/00
CPC分类号： H01S5/0202 , H01S5/0203 , H01S5/32341
摘要： A method for manufacturing a semiconductor device includes forming a semiconductor laminated structure on a substrate as a wafer including semiconductor laser structures; forming a first groove between the semiconductor laser structures on a major surface of the wafer; separating the wafer to laser bars including at least two of the semiconductor laser structures arrayed in a bar shape, after forming the first groove; forming a second groove in the first groove of the laser bars, the second groove having a width no wider than the first groove; and separating one of the laser bars into respective semiconductor lasers along the second groove.
摘要翻译： 一种半导体器件的制造方法，包括在基板上形成半导体层叠结构，作为包含半导体激光结构的晶片; 在所述晶片的主表面上的所述半导体激光器结构之间形成第一凹槽; 在形成所述第一凹槽之后，将所述晶片分离成激光棒，所述激光棒包括排列成棒状的所述半导体激光结构中的至少两个; 在激光棒的第一槽中形成第二槽，第二槽的宽度不比第一槽宽; 以及将所述激光棒中的一个沿着所述第二凹槽分离成相应的半导体激光器。
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公开(公告)号：US20110183453A1
公开(公告)日：2011-07-28
申请号：US12862829
申请日：2010-08-25
IPC分类号： H01L21/18
CPC分类号： H01S5/0202 , H01S5/0203 , H01S5/32341
摘要： A method for manufacturing a semiconductor device includes forming a semiconductor laminated structure on a substrate as a wafer including semiconductor laser structures; forming a first groove between the semiconductor laser structures on a major surface of the wafer; separating the wafer to laser bars including at least two of the semiconductor laser structures arrayed in a bar shape, after forming the first groove; forming a second groove in the first groove of the laser bars, the second groove having a width no wider than the first groove; and separating one of the laser bars into respective semiconductor lasers along the second groove.
摘要翻译： 一种半导体器件的制造方法，包括在基板上形成半导体层叠结构，作为包含半导体激光结构的晶片; 在所述晶片的主表面上的所述半导体激光器结构之间形成第一凹槽; 在形成所述第一凹槽之后，将所述晶片分离成激光棒，所述激光棒包括排列成棒状的所述半导体激光结构中的至少两个; 在激光棒的第一槽中形成第二槽，第二槽的宽度不比第一槽宽; 以及将所述激光棒中的一个沿着所述第二凹槽分离成相应的半导体激光器。
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公开(公告)号：US20090213891A1
公开(公告)日：2009-08-27
申请号：US12352623
申请日：2009-01-13
IPC分类号： H01S5/028
CPC分类号： H01S5/32341 , H01S5/028
摘要： A GaN semiconductor laser, includes a coating film on a front end surface through which laser light is emitted. The coating film includes a first insulating film in contact with the front end surface and a second insulating film on the first insulating film. The sum of the optical film thicknesses of the first insulating film and the second insulating film is an odd multiple of λ/4 with respect to the wavelength λ of laser light produced by the semiconductor laser. The adhesion of the first insulating film to GaN is stronger than that of the second insulating film to GaN. The refractive index of the first insulating film is 1.9 or less and the refractive index of the second insulating film is 2 to 2.3.
摘要翻译： GaN半导体激光器包括在发射激光的前端表面上的涂膜。 涂膜包括与前端表面接触的第一绝缘膜和第一绝缘膜上的第二绝缘膜。 第一绝缘膜和第二绝缘膜的光学膜厚度的总和相对于由半导体激光器产生的激光的波长λ是λ/ 4的奇数倍。 第一绝缘膜对GaN的附着力比第二绝缘膜对GaN的粘附强。 第一绝缘膜的折射率为1.9以下，第二绝缘膜的折射率为2〜2.3。
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公开(公告)号：US07920614B2
公开(公告)日：2011-04-05
申请号：US12620627
申请日：2009-11-18
申请人： Kyosuke Kuramoto
发明人： Kyosuke Kuramoto
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0021 , H01S5/0202 , H01S5/0206 , H01S5/02272 , H01S5/0425 , H01S5/2009 , H01S5/2201 , H01S5/2214 , H01S5/2231 , H01S5/34333 , H01S2304/04
摘要： A semiconductor laser having a high electrostatic withstand voltage, resistant to a power supply surge, and having improved long-term reliability is obtained by reducing current leakage through a threading dislocation portion. The semiconductor laser includes a substrate having a high dislocation region having a dislocation density of 1×105 cm−2 or more, a crystalline semiconductor structure located on the substrate and having an active layer, an insulating film located on the semiconductors structure, a surface electrode located on the insulating film and electrically continuous with the semiconductor structure for injection of a current into the active layer, and a back electrode located on a rear surface of the substrate. The semiconductor laser has a laser resonator with a length L, and the area of the surface electrode is 120×L μm2 or less.
摘要翻译： 通过减少通过穿透位错部分的电流泄漏，获得具有耐电源浪涌的高静电耐受电压并且具有改善的长期可靠性的半导体激光器。 半导体激光器包括具有位错密度为1×10 5 cm -2以上的高位错区域的基板，位于基板上并具有有源层的结晶半导体结构，位于半导体结构上的绝缘膜，表面 电极，位于绝缘膜上并与用于将电流注入有源层的半导体结构电连续，以及位于衬底的后表面上的背电极。 半导体激光器具有长度为L的激光谐振器，表面电极的面积为120×Lμm2以下。
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公开(公告)号：US07518162B2
公开(公告)日：2009-04-14
申请号：US11668640
申请日：2007-01-30
申请人： Kyosuke Kuramoto
发明人： Kyosuke Kuramoto
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/02 , H01L33/32 , H01S5/2009
摘要： A semiconductor light emitting device has a gallium nitride compound semiconductor, and a first cladding layer of a first conductivity type, an active layer, an electron barrier layer of a second conductivity type and made of InxAlyGa1-x-yN (0≦x≦1 and 0≦y≦1), and a second cladding layer of the second conductivity type, laminated, in order, on a substrate. The electron barrier layer has a larger band gap than each of the active layer and the second cladding layer. The thickness of the electron barrier layer is in a range from 2 nm to 7 nm.
摘要翻译： 半导体发光器件具有氮化镓化合物半导体，第一导电类型的第一包层，有源层，第二导电类型的电子势垒层，由In x Al y Ga 1-x-y N（0 <= x < = 1和0 <= y <= 1）和第二导电类型的第二包覆层按顺序层叠在基板上。 电子势垒层具有比有源层和第二包覆层中的每一个更大的带隙。 电子势垒层的厚度在2nm〜7nm的范围内。
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公开(公告)号：US20090022195A1
公开(公告)日：2009-01-22
申请号：US11910930
申请日：2006-03-15
申请人： Kyosuke Kuramoto
发明人： Kyosuke Kuramoto
IPC分类号： H01S5/323
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0021 , H01S5/0202 , H01S5/0206 , H01S5/02272 , H01S5/0425 , H01S5/2009 , H01S5/2201 , H01S5/2214 , H01S5/2231 , H01S5/34333 , H01S2304/04
摘要： A semiconductor laser having a high electrostatic withstand voltage, resistant to a power supply surge, and having improved long-term reliability is obtained by reducing current leakage through a threading dislocation portion. The semiconductor laser includes a substrate having a high dislocation region having a dislocation density of 1×105 cm−2 or more, a crystalline semiconductors structure located on the substrate and having an active layer, an insulating film located on the semiconductors structure, a surface electrode located on the insulating film and electrically continuous with the semiconductor structure for injection of a current into the active layer, and a back electrode located on a rear surface of the substrate. The semiconductor laser has a laser resonator with a length L, and the area of the surface electrode is 120×L μm2 or less.
摘要翻译： 通过减少通过穿透位错部分的电流泄漏，获得具有耐电源浪涌的高静电耐受电压并且具有改进的长期可靠性的半导体激光器。 半导体激光器包括具有位错密度为1×10 5 cm -2以上的高位错区域的基板，位于基板上并具有有源层的结晶半导体结构，位于半导体结构上的绝缘膜，位于 并且与用于将电流注入有源层的半导体结构电连续，并且位于衬底的后表面上的背电极。 半导体激光器具有长度为L的激光谐振器，表面电极的面积为120×Lm2以下。
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