公开(公告)号：US07678597B2

公开(公告)日：2010-03-16

申请号：US12323634

申请日：2008-11-26

申请人： Kenichi Ohtsuka ,  Yoichiro Tarui ,  Yosuke Suzuki ,  Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Yasunori Tokuda ,  Tatsuo Omori

发明人： Kenichi Ohtsuka ,  Yoichiro Tarui ,  Yosuke Suzuki ,  Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Yasunori Tokuda ,  Tatsuo Omori

IPC分类号： H01L21/00 ,  H01L21/28 ,  H01L21/3205

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/325 ,  H01L33/40 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3063

摘要： A method of manufacturing a semiconductor device provides a semiconductor device with a gallium-nitride-based semiconductor structure that allows long-term stable operation without degradation in device performance. After formation of an insulation film on a surface other than on a ridge surface, an oxygen-containing gas such as O2, O3, NO, N2O, or NO2 is supplied to oxidize a p-type GaN contact layer from the surface and to thereby form an oxide film on the surface of the p-type GaN contact layer. Then, a p-type electrode that establishes contact with the p-type GaN contact layer is formed by evaporation or sputtering on the oxide film and on the insulation film. Heat treatment is subsequently performed at temperatures between 400 and 700° C. in an atmosphere containing a nitrogen-containing gas such as N2 or NH3 or an inert gas such as Ar or He.

摘要翻译： 半导体器件的制造方法为半导体器件提供了氮化镓基半导体结构，其允许长期稳定的操作而不会降低器件性能。 在表面以外的表面上形成绝缘膜之后，供给诸如O 2，O 3，NO，N 2 O或NO 2的含氧气体以从表面氧化p型GaN接触层，由此 在p型GaN接触层的表面上形成氧化膜。 然后，通过在氧化物膜和绝缘膜上的蒸发或溅射形成与p型GaN接触层建立接触的p型电极。 随后在含有含氮气体如N 2或NH 3或惰性气体例如Ar或He的气氛中，在400-700℃的温度下进行热处理。

公开(公告)号：US20090170304A1

公开(公告)日：2009-07-02

申请号：US12337878

申请日：2008-12-18

申请人： Yoichiro Tarui ,  Kenichi Ohtsuka ,  Yosuke Suzuki ,  Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Yasunori Tokuda ,  Tatsuo Omori

发明人： Yoichiro Tarui ,  Kenichi Ohtsuka ,  Yosuke Suzuki ,  Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Yasunori Tokuda ,  Tatsuo Omori

IPC分类号： H01L21/441

CPC分类号： H01L21/28575 ,  H01L29/2003 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/40

摘要： A method of manufacturing a semiconductor device is provided, which can reduce the contact resistance of an ohmic electrode to a p-type nitride semiconductor layer and can achieve long-term stable operation. In forming, in an electrode forming step, a p-type ohmic electrode of a metal film by successive lamination of a Pd film which is a first p-type ohmic electrode and a Ta film which is a second p-type ohmic electrode on a p-type GaN contact layer, the metal film is formed to include an oxygen atom. In the presence of an oxygen atom in the metal film, then in a heat-treatment step, the p-type ohmic electrode of the metal film is heat-treated in an atmosphere that contains no oxygen atom-containing gas.

摘要翻译： 提供一种制造半导体器件的方法，其可以将欧姆电极的接触电阻降低到p型氮化物半导体层，并且可以实现长期稳定的操作。 在电极形成步骤中，通过在第一p型欧姆电极上连续层压作为第一p型欧姆电极的Pd膜和作为第二p型欧姆电极的Ta膜，在电极形成步骤中形成金属膜的p型欧姆电极 p型GaN接触层，金属膜形成为包含氧原子。 在金属膜中存在氧原子的情况下，在热处理工序中，金属膜的p型欧姆电极在不含氧原子气体的气氛中进行热处理。

公开(公告)号：US20090142871A1

公开(公告)日：2009-06-04

申请号：US12323634

申请日：2008-11-26

申请人： Kenichi Ohtsuka ,  Yoichiro Tarui ,  Yosuke Suzuki ,  Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Yasunori Tokuda ,  Tatsuo Omori

发明人： Kenichi Ohtsuka ,  Yoichiro Tarui ,  Yosuke Suzuki ,  Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Yasunori Tokuda ,  Tatsuo Omori

IPC分类号： H01L21/20 ,  H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/325 ,  H01L33/40 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3063

摘要： A method of manufacturing a semiconductor device provides a semiconductor device with a gallium-nitride-based semiconductor structure that allows long-term stable operation without degradation in device performance. After formation of an insulation film on a surface other than on a ridge surface, an oxygen-containing gas such as O2, O3, NO, N2O, or NO2 is supplied to oxidize a p-type GaN contact layer from the surface and to thereby form an oxide film on the surface of the p-type GaN contact layer. Then, a p-type electrode that establishes contact with the p-type GaN contact layer is formed by evaporation or sputtering on the oxide film and on the insulation film. Heat treatment is subsequently performed at temperatures between 400 and 700° C. in an atmosphere containing a nitrogen-containing gas such as N2 or NH3 or an inert gas such as Ar or He.

摘要翻译： 半导体器件的制造方法为半导体器件提供了氮化镓基半导体结构，其允许长期稳定的操作而不会降低器件性能。 在表面以外的表面上形成绝缘膜之后，供给诸如O 2，O 3，NO，N 2 O或NO 2的含氧气体以从表面氧化p型GaN接触层，由此 在p型GaN接触层的表面上形成氧化膜。 然后，通过在氧化物膜和绝缘膜上的蒸发或溅射形成与p型GaN接触层建立接触的p型电极。 随后在含有含氮气体如N 2或NH 3或惰性气体例如Ar或He的气氛中，在400-700℃的温度下进行热处理。