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    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    1.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20090142871A1

    公开(公告)日：2009-06-04

    申请号：US12323634

    申请日：2008-11-26

    申请人： Kenichi Ohtsuka ,  Yoichiro Tarui ,  Yosuke Suzuki ,  Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Yasunori Tokuda ,  Tatsuo Omori

    发明人： Kenichi Ohtsuka ,  Yoichiro Tarui ,  Yosuke Suzuki ,  Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Yasunori Tokuda ,  Tatsuo Omori

    IPC分类号： H01L21/20 ,  H01L33/00

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/325 ,  H01L33/40 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3063

    摘要： A method of manufacturing a semiconductor device provides a semiconductor device with a gallium-nitride-based semiconductor structure that allows long-term stable operation without degradation in device performance. After formation of an insulation film on a surface other than on a ridge surface, an oxygen-containing gas such as O2, O3, NO, N2O, or NO2 is supplied to oxidize a p-type GaN contact layer from the surface and to thereby form an oxide film on the surface of the p-type GaN contact layer. Then, a p-type electrode that establishes contact with the p-type GaN contact layer is formed by evaporation or sputtering on the oxide film and on the insulation film. Heat treatment is subsequently performed at temperatures between 400 and 700° C. in an atmosphere containing a nitrogen-containing gas such as N2 or NH3 or an inert gas such as Ar or He.

    摘要翻译： 半导体器件的制造方法为半导体器件提供了氮化镓基半导体结构，其允许长期稳定的操作而不会降低器件性能。 在表面以外的表面上形成绝缘膜之后，供给诸如O 2，O 3，NO，N 2 O或NO 2的含氧气体以从表面氧化p型GaN接触层，由此 在p型GaN接触层的表面上形成氧化膜。 然后，通过在氧化物膜和绝缘膜上的蒸发或溅射形成与p型GaN接触层建立接触的p型电极。 随后在含有含氮气体如N 2或NH 3或惰性气体例如Ar或He的气氛中，在400-700℃的温度下进行热处理。

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    3.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20090170304A1

    公开(公告)日：2009-07-02

    申请号：US12337878

    申请日：2008-12-18

    申请人： Yoichiro Tarui ,  Kenichi Ohtsuka ,  Yosuke Suzuki ,  Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Yasunori Tokuda ,  Tatsuo Omori

    发明人： Yoichiro Tarui ,  Kenichi Ohtsuka ,  Yosuke Suzuki ,  Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Yasunori Tokuda ,  Tatsuo Omori

    IPC分类号： H01L21/441

    CPC分类号： H01L21/28575 ,  H01L29/2003 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/40

    摘要： A method of manufacturing a semiconductor device is provided, which can reduce the contact resistance of an ohmic electrode to a p-type nitride semiconductor layer and can achieve long-term stable operation. In forming, in an electrode forming step, a p-type ohmic electrode of a metal film by successive lamination of a Pd film which is a first p-type ohmic electrode and a Ta film which is a second p-type ohmic electrode on a p-type GaN contact layer, the metal film is formed to include an oxygen atom. In the presence of an oxygen atom in the metal film, then in a heat-treatment step, the p-type ohmic electrode of the metal film is heat-treated in an atmosphere that contains no oxygen atom-containing gas.

    摘要翻译： 提供一种制造半导体器件的方法，其可以将欧姆电极的接触电阻降低到p型氮化物半导体层，并且可以实现长期稳定的操作。 在电极形成步骤中，通过在第一p型欧姆电极上连续层压作为第一p型欧姆电极的Pd膜和作为第二p型欧姆电极的Ta膜，在电极形成步骤中形成金属膜的p型欧姆电极 p型GaN接触层，金属膜形成为包含氧原子。 在金属膜中存在氧原子的情况下，在热处理工序中，金属膜的p型欧姆电极在不含氧原子气体的气氛中进行热处理。

    NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    5.
    发明申请
    NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    氮化物半导体器件及其制造方法

    公开(公告)号：US20090140389A1

    公开(公告)日：2009-06-04

    申请号：US12268509

    申请日：2008-11-11

    申请人： Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Hiroshi Kurokawa ,  Kenichi Ohtsuka ,  Yoichiro Tarui ,  Yasunori Tokuda

    发明人： Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Hiroshi Kurokawa ,  Kenichi Ohtsuka ,  Yoichiro Tarui ,  Yasunori Tokuda

    IPC分类号： H01L29/20 ,  H01L21/20

    CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/32341 ,  H01L2924/00

    摘要： A nitride semiconductor device with a p electrode having no resistance between itself and other electrodes, and a method of manufacturing the same are provided. A p electrode is formed of a first Pd film, a Ta film, and a second Pd film, which is an antioxidant film for preventing oxidation of the Ta film, and on a p-type contact layer of a nitride semiconductor. On the second Pd film, a pad electrode is formed. The second Pd film as an antioxidant film is formed on the entire upper surface of the Ta film which forms the p electrode, to prevent oxidation of the Ta film. This inhibits the resistance between the p electrode and the pad electrode, thereby preventing a failure in contact between the p electrode and the pad electrode and providing the low-resistance p electrode.

    摘要翻译： 提供一种具有在其自身与其他电极之间不具有电阻的p电极的氮化物半导体器件及其制造方法。 p电极由作为防止氧化Ta膜的抗氧化剂膜和氮化物半导体的p型接触层的第一Pd膜，Ta膜和第二Pd膜形成。 在第二Pd膜上形成焊盘电极。 作为抗氧化剂膜的第二Pd膜形成在形成p电极的Ta膜的整个上表面上，以防止Ta膜的氧化。 这抑制了p电极和焊盘电极之间的电阻，从而防止p电极和焊盘电极之间的接触不良，并提供低电阻p电极。

    Semiconductor device and manufacturing method thereof
    10.
    发明授权
    Semiconductor device and manufacturing method thereof 失效
    半导体装置及其制造方法

    公开(公告)号：US06518635B1

    公开(公告)日：2003-02-11

    申请号：US09610862

    申请日：2000-07-06

    申请人： Katsuomi Shiozawa ,  Toshiyuki Oishi ,  Yuji Abe ,  Yasunori Tokuda

    发明人： Katsuomi Shiozawa ,  Toshiyuki Oishi ,  Yuji Abe ,  Yasunori Tokuda

    IPC分类号： H01L27108

    CPC分类号： H01L29/517 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/28167

    摘要： A major object of the present invention is to provide an improved semiconductor device so as to be able to reduce gate electric field concentration at a channel edge, suppress decrease in the threshold during MOSFET operation and reduce the leakage current. A gate insulation film is formed on a semiconductor substrate. A gate electrode is formed on the semiconductor substrate with the gate insulation film therebetween. The dielectric constant of the gate insulation film is not uniform in the surface.

    摘要翻译： 本发明的主要目的是提供一种改进的半导体器件，以便能够降低沟道边缘处的栅极电场集中，抑制MOSFET操作期间阈值的降低并减少漏电流。 在半导体衬底上形成栅极绝缘膜。 栅电极形成在半导体衬底上，其间具有栅极绝缘膜。 栅极绝缘膜的介电常数在表面上不均匀。