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公开(公告)号：US07208808B2
公开(公告)日：2007-04-24
申请号：US11159137
申请日：2005-06-23
IPC分类号： H01L29/82 , H01L43/00 , H01L27/14 , H01L29/84 , H01L31/111
CPC分类号： G11C11/16 , B82Y25/00 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A magnetic random access memory with lower switching field is provided. The memory includes a first antiferromagnetic layer, a pinned layer formed on the first antiferromagnetic layer, a tunnel barrier layer formed on the pinned layer, a ferromagnetic free layer formed on the tunnel barrier layer, and a multi-layered metal layer. The multi-layered metal layer is formed by at least one metal layer, where the direction of the anisotropy axis of the antiferromagnetic layer and the ferromagnetic layer and that of the ferromagnetic free layer are arranged orthogonally. The provided memory has the advantage of lowering the switching field of the ferromagnetic layer, and further lowering the writing current.
摘要翻译： 提供具有较低开关电场的磁性随机存取存储器。 存储器包括第一反铁磁层，形成在第一反铁磁层上的钉扎层，形成在钉扎层上的隧道势垒层，形成在隧道势垒层上的铁磁自由层，以及多层金属层。 多层金属层由至少一个金属层形成，其中反铁磁层和铁磁层的各向异性轴的方向和铁磁性层的各向异性轴的方向被正交布置。 提供的存储器具有降低铁磁层的开关场的优点，并进一步降低写入电流。
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公开(公告)号：US20060102971A1
公开(公告)日：2006-05-18
申请号：US11159137
申请日：2005-06-23
CPC分类号： G11C11/16 , B82Y25/00 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A magnetic random access memory with lower switching field is provided. The memory includes a first antiferromagnetic layer, a pinned layer formed on the first antiferromagnetic layer, a tunnel barrier layer formed on the pinned layer, a ferromagnetic free layer formed on the tunnel barrier layer, and a multi-layered metal layer. The multi-layered metal layer is formed by at least one metal layer, where the direction of the anisotropy axis of the antiferromagnetic layer and the ferromagnetic layer and that of the ferromagnetic free layer are arranged orthogonally. The provided memory has the advantage of lowering the switching field of the ferromagnetic layer, and further lowering the writing current.
摘要翻译： 提供具有较低开关电场的磁性随机存取存储器。 存储器包括第一反铁磁层，形成在第一反铁磁层上的钉扎层，形成在钉扎层上的隧道势垒层，形成在隧道势垒层上的铁磁自由层，以及多层金属层。 多层金属层由至少一个金属层形成，其中反铁磁层和铁磁层的各向异性轴的方向和铁磁性层的各向异性轴的方向被正交布置。 提供的存储器具有降低铁磁层的开关场的优点，并进一步降低写入电流。
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3.发明授权Structure and access method for magnetic memory cell and circuit of magnetic memory 失效磁存储单元和磁记忆电路的结构和存取方法公开(公告)号：US07515458B2
公开(公告)日：2009-04-07
申请号：US11465460
申请日：2006-08-18
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A magnetic memory cell, used in a magnetic memory device, includes a stacked magnetic pinned layer, serving as a part of the base structure. The stacked magnetic pinned stacked layer has a top pinned layer and a bottom pinned layer, between which there is a sufficient large magnetic coupling force to maintain magnetization of the top pinned layer on a reference direction. A tunnel barrier layer is disposed on the stacked magnetic pinned layer. A magnetic free stacked layer is disposed on the tunnel barrier layer. The magnetic free stacked layer includes a bottom free layer having a bottom magnetization and a top free layer having a top magnetization. When no assisted magnetic field is applied, the bottom magnetization is anti-parallel to the top magnetization and is perpendicular to the reference direction on the top pinned layer. A magnetic bias layer can be also disposed on the top free layer.
摘要翻译： 在磁存储器件中使用的磁存储单元包括用作基础结构的一部分的层叠磁性固定层。 堆叠的磁性钉扎堆叠层具有顶部被钉扎层和底部被钉扎层，在其之间存在足够大的磁耦合力以保持顶部钉扎层在参考方向上的磁化。 隧道势垒层设置在堆叠的磁性钉扎层上。 无磁性堆叠层设置在隧道势垒层上。 无磁性堆叠层包括具有底部磁化的底部自由层和具有顶部磁化强度的顶部自由层。 当没有施加辅助磁场时，底部磁化与顶部磁化反平行并且垂直于顶部被钉扎层上的参考方向。 磁偏置层也可以设置在顶部自由层上。
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4.发明授权Method for switching magnetic moment in magnetoresistive random access memory with low current 有权低电流磁阻随机存取存储器中磁矩切换的方法公开(公告)号：US07420837B2
公开(公告)日：2008-09-02
申请号：US11338653
申请日：2006-01-25
申请人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
发明人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
IPC分类号： G11C11/00
CPC分类号： G11C11/1693 , G11C11/1673 , G11C11/1675
摘要： A method for writing a memory cell of a magnetoresistive random access memory (MRAM) device includes, sequentially, providing a first magnetic field in a first direction, providing a second magnetic field in a second direction substantially perpendicular to the first direction, turning off the first magnetic field, providing a third magnetic field in a third direction opposite to the first direction, turning off the second magnetic field, and turning off the third magnetic field. A method for switching magnetic moments in an MRAM memory cell includes providing a magnetic field in a direction forming a blunt angle with a direction of a bias magnetic field. A method for reading an MRAM device includes partially switching magnetic moments in a reference memory cell to generate a reference current; measuring a read current through a memory cell to be read; and comparing the read current with the reference current.
摘要翻译： 用于写入磁阻随机存取存储器（MRAM）器件的存储单元的方法包括：依次在第一方向上提供第一磁场，在基本上垂直于第一方向的第二方向上提供第二磁场， 第一磁场，在与第一方向相反的第三方向上提供第三磁场，关闭第二磁场，并且关闭第三磁场。 用于切换MRAM存储单元中的磁矩的方法包括在与偏置磁场的方向形成钝角的方向上提供磁场。 一种用于读取MRAM器件的方法包括部分地转换参考存储器单元中的磁矩以产生参考电流; 测量要读取的存储单元的读取电流; 并将读取的电流与参考电流进行比较。
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5.发明申请STRUCTURE AND ACCESS METHOD FOR MAGNETIC MEMORY CELL AND CIRCUIT OF MAGNETIC MEMORY 失效磁记忆体和磁记忆电路的结构和访问方法公开(公告)号：US20070242501A1
公开(公告)日：2007-10-18
申请号：US11465460
申请日：2006-08-18
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A magnetic memory cell, used in a magnetic memory device, includes a stacked magnetic pinned layer, serving as a part of the base structure. The stacked magnetic pinned stacked layer has a top pinned layer and a bottom pinned layer, between which there is a sufficient large magnetic coupling force to maintain magnetization of the top pinned layer on a reference direction. A tunnel barrier layer is disposed on the stacked magnetic pinned layer. A magnetic free stacked layer is disposed on the tunnel barrier layer. The magnetic free stacked layer includes a bottom free layer having a bottom magnetization and a top free layer having a top magnetization. When no assisted magnetic field is applied, the bottom magnetization is anti-parallel to the top magnetization and is perpendicular to the reference direction on the top pinned layer. A magnetic bias layer can be also disposed on the top free layer.
摘要翻译： 在磁存储器件中使用的磁存储单元包括用作基础结构的一部分的层叠磁性固定层。 堆叠的磁性钉扎堆叠层具有顶部被钉扎层和底部被钉扎层，在其之间存在足够大的磁耦合力以保持顶部钉扎层在参考方向上的磁化。 隧道势垒层设置在堆叠的磁性钉扎层上。 无磁性堆叠层设置在隧道势垒层上。 无磁性堆叠层包括具有底部磁化的底部自由层和具有顶部磁化强度的顶部自由层。 当没有施加辅助磁场时，底部磁化与顶部磁化反平行并且垂直于顶部被钉扎层上的参考方向。 磁偏置层也可以设置在顶部自由层上。
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6.发明授权Method for switching magnetic moment in magnetoresistive random access memory with low current 有权低电流磁阻随机存取存储器中磁矩切换的方法公开(公告)号：US07800937B2
公开(公告)日：2010-09-21
申请号：US12219247
申请日：2008-07-18
申请人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
发明人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
IPC分类号： G11C11/00
CPC分类号： G11C11/1693 , G11C11/1673 , G11C11/1675
摘要： A method for writing a memory cell of a magnetoresistive random access memory (MRAM) device includes, sequentially, providing a first magnetic field in a first direction, providing a second magnetic field in a second direction substantially perpendicular to the first direction, turning off the first magnetic field, providing a third magnetic field in a third direction opposite to the first direction, turning off the second magnetic field, and turning off the third magnetic field. A method for switching magnetic moments in an MRAM memory cell includes providing a magnetic field in a direction forming a blunt angle with a direction of a bias magnetic field. A method for reading an MRAM device includes partially switching magnetic moments in a reference memory cell to generate a reference current; measuring a read current through a memory cell to be read; and comparing the read current with the reference current.
摘要翻译： 用于写入磁阻随机存取存储器（MRAM）器件的存储单元的方法包括：依次在第一方向上提供第一磁场，在基本上垂直于第一方向的第二方向上提供第二磁场， 第一磁场，在与第一方向相反的第三方向上提供第三磁场，关闭第二磁场，并且关闭第三磁场。 用于切换MRAM存储单元中的磁矩的方法包括在与偏置磁场的方向形成钝角的方向上提供磁场。 一种用于读取MRAM器件的方法包括部分地转换参考存储器单元中的磁矩以产生参考电流; 测量要读取的存储单元的读取电流; 并将读取的电流与参考电流进行比较。
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7.发明申请Method for switching magnetic moment in magnetoresistive random access memory with low current 有权低电流磁阻随机存取存储器中磁矩切换的方法公开(公告)号：US20070030727A1
公开(公告)日：2007-02-08
申请号：US11338653
申请日：2006-01-25
申请人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
发明人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
IPC分类号： G11C11/14
CPC分类号： G11C11/1693 , G11C11/1673 , G11C11/1675
摘要： A method for writing a memory cell of a magnetoresistive random access memory (MRAM) device includes, sequentially, providing a first magnetic field in a first direction, providing a second magnetic field in a second direction substantially perpendicular to the first direction, turning off the first magnetic field, providing a third magnetic field in a third direction opposite to the first direction, turning off the second magnetic field, and turning off the third magnetic field. A method for switching magnetic moments in an MRAM memory cell includes providing a magnetic field in a direction forming a blunt angle with a direction of a bias magnetic field. A method for reading an MRAM device includes partially switching magnetic moments in a reference memory cell to generate a reference current; measuring a read current through a memory cell to be read; and comparing the read current with the reference current.
摘要翻译： 用于写入磁阻随机存取存储器（MRAM）器件的存储单元的方法包括：依次在第一方向上提供第一磁场，在基本上垂直于第一方向的第二方向上提供第二磁场， 第一磁场，在与第一方向相反的第三方向上提供第三磁场，关闭第二磁场，并且关闭第三磁场。 用于切换MRAM存储单元中的磁矩的方法包括在与偏置磁场的方向形成钝角的方向上提供磁场。 一种用于读取MRAM器件的方法包括部分地转换参考存储器单元中的磁矩以产生参考电流; 测量要读取的存储单元的读取电流; 并将读取的电流与参考电流进行比较。
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8.发明申请Method for switching magnetic moment in magnetoresistive random access memory with low current 有权低电流磁阻随机存取存储器中磁矩切换的方法公开(公告)号：US20090003043A1
公开(公告)日：2009-01-01
申请号：US12219247
申请日：2008-07-18
申请人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
发明人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
CPC分类号： G11C11/1693 , G11C11/1673 , G11C11/1675
摘要： A method for writing a memory cell of a magnetoresistive random access memory (MRAM) device includes, sequentially, providing a first magnetic field in a first direction, providing a second magnetic field in a second direction substantially perpendicular to the first direction, turning off the first magnetic field, providing a third magnetic field in a third direction opposite to the first direction, turning off the second magnetic field, and turning off the third magnetic field. A method for switching magnetic moments in an MRAM memory cell includes providing a magnetic field in a direction forming a blunt angle with a direction of a bias magnetic field. A method for reading an MRAM device includes partially switching magnetic moments in a reference memory cell to generate a reference current; measuring a read current through a memory cell to be read; and comparing the read current with the reference current.
摘要翻译： 用于写入磁阻随机存取存储器（MRAM）器件的存储单元的方法包括：依次在第一方向上提供第一磁场，在基本上垂直于第一方向的第二方向上提供第二磁场， 第一磁场，在与第一方向相反的第三方向上提供第三磁场，关闭第二磁场，并且关闭第三磁场。 用于切换MRAM存储单元中的磁矩的方法包括在与偏置磁场的方向形成钝角的方向上提供磁场。 一种用于读取MRAM器件的方法包括部分地转换参考存储器单元中的磁矩以产生参考电流; 测量要读取的存储单元的读取电流; 并将读取的电流与参考电流进行比较。
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9.发明申请Magnetic random access memory with lower switching field through indirect exchange coupling 审中-公开磁性随机存取存储器通过间接交换耦合具有较低的开关电场公开(公告)号：US20060138509A1
公开(公告)日：2006-06-29
申请号：US11155465
申请日：2005-06-20
申请人： Yuan-Jen Lee , Yung-Hung Wang , Lien-Chang Wang , Ming-Jer Kao
发明人： Yuan-Jen Lee , Yung-Hung Wang , Lien-Chang Wang , Ming-Jer Kao
IPC分类号： H01L27/108
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/16 , H01F10/3254 , H01F10/3281
摘要： A magnetic random access memory with lower switching field through indirect exchange coupling. The memory includes a first antiferromagnetic layer, a pinned layer formed on the first antiferromagnetic layer, a tunnel barrier layer formed on the pinned layer, a ferromagnetic free layer formed on the tunnel barrier layer, a metal layer formed on the ferromagnetic free layer, and a second antiferromagnetic layer formed on the metal layer. The anisotropy axis of the second antiferromagnetic layer and the ferromagnetic layer and that of the ferromagnetic free layer are arranged in parallel. The net magnetic moment of the antiferromagnetic layer interface between the second antiferromagnetic layer and the metal layer is close to zero. The memory has the advantages of lowering the switching field of the ferromagnetic layer and lowering the writing current.
摘要翻译： 通过间接交换耦合的具有较低开关电场的磁性随机存取存储器。 存储器包括第一反铁磁层，形成在第一反铁磁性层上的被钉扎层，形成在钉扎层上的隧道阻挡层，形成在隧道势垒层上的铁磁自由层，形成在铁磁自由层上的金属层，以及 形成在金属层上的第二反铁磁层。 第二反铁磁性层和铁磁性层的各向异性轴与铁磁性层的各向异性轴平行排列。 第二反铁磁层与金属层之间的反铁磁层界面的净磁矩接近零。 存储器具有降低铁磁层的开关场和降低写入电流的优点。
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10.发明授权公开(公告)号：US07577017B2
公开(公告)日：2009-08-18
申请号：US11581466
申请日：2006-10-17
申请人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee
发明人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C8/04 , G11C11/5607 , G11C19/00
摘要： A method for accessing a memory cell of a magnetoresistive random access memory (MRAM) device, where the memory cell includes a plurality of memory units, includes writing the memory cell by identifying ones of the memory units having stored therein a datum different from a datum to be written thereto; and simultaneously writing all of the ones of the memory units. An MRAM device includes a plurality of write word lines, a plurality of write bit lines, and a plurality of memory cells. Each memory cell includes a plurality of memory units. Each memory unit includes a free magnetic region having one or more easy axes non-perpendicular to the write bit lines and non-perpendicular to the write word lines, a pinned magnetic region, and a tunneling barrier between the free magnetic region and the pinned magnetic region.
摘要翻译： 一种用于访问磁阻随机存取存储器（MRAM）器件的存储单元的方法，其中存储器单元包括多个存储器单元，包括通过识别其中存储有与基准不同的基准的存储器单元来写入存储器单元 写入; 并同时写入所有存储单元。 MRAM装置包括多个写字线，多个写位线和多个存储器单元。 每个存储单元包括多个存储单元。 每个存储单元包括具有一个或多个容易轴的自由磁区，该易磁轴与写位线非垂直并且非垂直于写字线，固定磁区和自由磁区与固定磁之间的隧道势垒 地区。
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