DRIVING APPARATUS, OLED PANEL AND METHOD FOR DRIVING OLED PANEL
    1.
    发明申请
    DRIVING APPARATUS, OLED PANEL AND METHOD FOR DRIVING OLED PANEL 有权
    驱动装置,OLED面板和驱动OLED面板的方法

    公开(公告)号:US20120306398A1

    公开(公告)日:2012-12-06

    申请号:US13486051

    申请日:2012-06-01

    IPC分类号: H05B37/02

    CPC分类号: G09G3/3283 G09G2310/0248

    摘要: The present disclosure relates to a driving apparatus, an OLED (Organic Light-Emitting Diode) panel, and a method for driving the OLED panel. The driving apparatus can be integrated on a substrate of pixel circuits and is capable of providing fast and stable current driving. The driving apparatus includes a switching module for selecting a voltage signal according to a received clock signal; a conversion module for converting the voltage signal into a current signal; and an output module for outputting the voltage signal or the converted current signal to drive a pixel circuit array, wherein the switching module is connected to the conversion module and the output module, and the conversion module is connected to the switching module and the output module.

    摘要翻译: 本发明涉及驱动装置,OLED(有机发光二极管)面板以及驱动OLED面板的方法。 驱动装置可以集成在像素电路的基板上,并且能够提供快速和稳定的电流驱动。 驱动装置包括:切换模块,用于根据所接收的时钟信号选择电压信号; 用于将电压信号转换为电流信号的转换模块; 以及输出模块,用于输出电压信号或转换的电流信号以驱动像素电路阵列,其中切换模块连接到转换模块和输出模块,并且转换模块连接到开关模块和输出模块 。

    MANUFACTURING METHOD FOR THIN FILM TRANSISTOR WITH POLYSILICON ACTIVE LAYER
    2.
    发明申请
    MANUFACTURING METHOD FOR THIN FILM TRANSISTOR WITH POLYSILICON ACTIVE LAYER 有权
    具有多晶硅活性层的薄膜晶体管的制造方法

    公开(公告)号:US20120289007A1

    公开(公告)日:2012-11-15

    申请号:US13469567

    申请日:2012-05-11

    IPC分类号: H01L21/336

    CPC分类号: H01L29/6675 H01L27/1277

    摘要: Embodiments of the disclosed technology relate to a method for manufacturing a thin film transistor (TFT) with a polysilicon active layer comprising: depositing an amorphous silicon layer on a substrate, and patterning the amorphous silicon layer so as to form an active layer comprising a source region, a drain region and a channel region; depositing an inducing metal layer on the source region and the drain region; performing a first thermal treatment on the active layer provided with the inducing metal layer so that the active layer is crystallized under the effect of the inducing metal; doping the source region and the drain region with a first impurity for collecting the inducing metal; and performing a second thermal treatment on the doped active layer so that the first impurity absorbs the inducing metal remained in the channel region.

    摘要翻译: 所公开的技术的实施例涉及一种用于制造具有多晶硅有源层的薄膜晶体管(TFT)的方法,包括:在衬底上沉积非晶硅层,并且对非晶硅层进行构图以形成包括源极 区域,漏极区域和沟道区域; 在所述源极区域和所述漏极区域上沉积感应金属层; 在具有诱导金属层的有源层上进行第一热处理,使得活性层在诱导金属的作用下结晶; 用第一杂质掺杂源区和漏区以收集诱导金属; 以及对掺杂的有源层进行第二热处理,使得第一杂质吸收留在沟道区中的诱导金属。