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公开(公告)号：US11942929B2
公开(公告)日：2024-03-26
申请号：US17815193
申请日：2022-07-26
Applicant: pSemi Corporation
Inventor： Jeffrey A. Dykstra , Jaroslaw Adamski , Edward Nicholas Comfoltey
IPC: H03K17/296 , H03K17/00
CPC classification number: H03K17/296 , H03K17/00
Abstract: Methods and devices to control PCM switches are disclosed. The described devices include PCM switch drivers and logic and control circuits, all integrated with the PCM and the associated heater on the same chip. Various architectures for the driver are also presented, including architectures implement feedback mechanism to mitigate variations from process, temperature, and supply voltage.
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公开(公告)号：US11624762B2
公开(公告)日：2023-04-11
申请号：US17351651
申请日：2021-06-18
Applicant: pSemi Corporation
Inventor： Jaroslaw Adamski , Jeffrey A. Dykstra , Edward Nicholas Comfoltey
Abstract: Circuits and methods that enable stacking of phase change material (PCM) switches and that accommodate variations in the resistance of the resistive heater(s) of such switches. Stacking is enabled by providing isolation switches for the resistive heater(s) in a PCM switch to reduce parasitic capacitance caused by the proximity of the resistive heater(s) to the PCM region of a PCM switch. Variations in the resistance of the resistive heater(s) of a PCM switch are mitigated or eliminated by sensing the actual resistance of the resistive heater(s) and then determining a suitable adjusted electrical pulse profile for the resistive heater(s) that generates a precise thermal pulse to the PCM region, thereby reliably achieving a desired switch state while extending the life of the resistive heater(s) and the phase-change material.
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公开(公告)号：US10277211B2
公开(公告)日：2019-04-30
申请号：US15365597
申请日：2016-11-30
Applicant: pSemi Corporation
Inventor： Jianhua Lu , Peter Bacon , Naveen Yanduru , Edward Nicholas Comfoltey , Michael Conry , Chieh-Kai Yang
IPC: H03K17/16 , H04B1/44 , H03K5/08 , H03K17/687 , H03G7/00 , H03G7/06 , H03G11/00 , H03K17/30 , H01L27/02
Abstract: A fast response time, self-activating, adjustable threshold limiter including a limiting element LE, a first coupling element CE1 electrically connected from a signal node of LE to a control input of LE, and a second coupling element CE2 electrically connected from the control input of LE to a nominal node of LE. An initial bias (control) voltage is also supplied to the control input of LE to dynamically control the limiting threshold for the limiter. Embodiments include usage of self-activating adjustable power limiters in combination with series switch components in a switch circuit in lieu of conventional shunt switches.
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公开(公告)号：US20190097627A1
公开(公告)日：2019-03-28
申请号：US16200047
申请日：2018-11-26
Applicant: pSemi Corporation
Inventor： Michael Conry , Kevin Roberts , Edward Nicholas Comfoltey
IPC: H03K17/693 , H04B1/48 , H04B1/44
Abstract: A FET-based RF switch architecture and method that provides for independent control of FETs within component branches of a switching circuit. With independent control of branch FETs, every RF FET in an inactive branch that is in an “open” (capacitive) state can be shunted to RF ground and thus mitigate impedance mismatch effects. Providing a sufficiently low impedance to RF ground diminishes such negative effects and reduces the sensitivity of the switch circuit to non-matched impedances.
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公开(公告)号：US12230592B2
公开(公告)日：2025-02-18
申请号：US18585653
申请日：2024-02-23
Applicant: pSemi Corporation
Inventor： William R. Smith, Jr. , Jaroslaw Adamski , Dan William Nobbe , Edward Nicholas Comfoltey , Jingbo Wang
Abstract: An apparatus and method for a frequency based integrated circuit that selectively filters out unwanted bands or regions of interfering frequencies utilizing one or more tunable notch or bandpass filters or tunable low or high pass filters capable of operating across multiple frequencies and multiple bands in noisy RF environments. The tunable filters are fabricated within the same integrated circuit package as the associated frequency based circuitry, thus minimizing R, L, and C parasitic values, and also allowing residual and other parasitic impedance in the associated circuitry and IC package to be absorbed and compensated.
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Patent Agency Ranking
公开(公告)号：US20220406997A1
公开(公告)日：2022-12-22
申请号：US17743924
申请日：2022-05-13
Applicant: pSemi Corporation
Inventor： Jaroslaw Adamski , Jeffrey A. Dykstra , Edward Nicholas Comfoltey
IPC: H01L45/00
Abstract: Circuits and methods that enable stacking of phase change material (PCM) switches and that accommodate variations in the resistance of the resistive heater(s) of such switches. Stacking is enabled by providing isolation switches for the resistive heater(s) in a PCM switch to reduce parasitic capacitance caused by the proximity of the resistive heater(s) to the PCM region of a PCM switch. Variations in the resistance of the resistive heater(s) of a PCM switch are mitigated or eliminated by sensing the actual resistance of the resistive heater(s) and then determining a suitable adjusted electrical pulse profile for the resistive heater(s) that generates a precise thermal pulse to the PCM region, thereby reliably achieving a desired switch state while extending the life of the resistive heater(s) and the phase-change material.
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公开(公告)号：US10468360B2
公开(公告)日：2019-11-05
申请号：US15603230
申请日：2017-05-23
Applicant: pSemi Corporation
Inventor： William R. Smith , Jaroslaw Adamski , Dan William Nobbe , Edward Nicholas Comfoltey , Jingbo Wang
Abstract: An apparatus and method for a frequency based integrated circuit that selectively filters out unwanted bands or regions of interfering frequencies utilizing one or more tunable notch or bandpass filters or tunable low or high pass filters capable of operating across multiple frequencies and multiple bands in noisy RF environments. The tunable filters are fabricated within the same integrated circuit package as the associated frequency based circuitry, thus minimizing R, L, and C parasitic values, and also allowing residual and other parasitic impedance in the associated circuitry and IC package to be absorbed and compensated.
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公开(公告)号：US11923322B2
公开(公告)日：2024-03-05
申请号：US17544722
申请日：2021-12-07
Applicant: pSemi Corporation
Inventor： William R. Smith, Jr. , Jaroslaw Adamski , Dan William Nobbe , Edward Nicholas Comfoltey , Jingbo Wang
CPC classification number: H01L23/66 , H03H7/01 , H03H7/0153 , H03H7/06 , H03H7/12 , H03H7/1758 , H01L2223/6672 , H01L2924/0002 , H03H2007/013 , H03H2210/036 , Y10T29/4913 , H01L2924/0002 , H01L2924/00
Abstract: An apparatus and method for a frequency based integrated circuit that selectively filters out unwanted bands or regions of interfering frequencies utilizing one or more tunable notch or bandpass filters or tunable low or high pass filters capable of operating across multiple frequencies and multiple bands in noisy RF environments. The tunable filters are fabricated within the same integrated circuit package as the associated frequency based circuitry, thus minimizing R, L, and C parasitic values, and also allowing residual and other parasitic impedance in the associated circuitry and IC package to be absorbed and compensated.
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公开(公告)号：US20220173058A1
公开(公告)日：2022-06-02
申请号：US17544722
申请日：2021-12-07
Applicant: pSemi Corporation
Inventor： William R. Smith, JR. , Jaroslaw Adamski , Dan William Nobbe , Edward Nicholas Comfoltey , Jingbo Wang
Abstract: An apparatus and method for a frequency based integrated circuit that selectively filters out unwanted bands or regions of interfering frequencies utilizing one or more tunable notch or bandpass filters or tunable low or high pass filters capable of operating across multiple frequencies and multiple bands in noisy RF environments. The tunable filters are fabricated within the same integrated circuit package as the associated frequency based circuitry, thus minimizing R, L, and C parasitic values, and also allowing residual and other parasitic impedance in the associated circuitry and IC package to be absorbed and compensated.
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公开(公告)号：US11211344B2
公开(公告)日：2021-12-28
申请号：US16596626
申请日：2019-10-08
Applicant: pSemi Corporation
Inventor： William R. Smith , Jaroslaw Adamski , Dan William Nobbe , Edward Nicholas Comfoltey , Jingbo Wang
Abstract: An apparatus and method for a frequency based integrated circuit that selectively filters out unwanted bands or regions of interfering frequencies utilizing one or more tunable notch or bandpass filters or tunable low or high pass filters capable of operating across multiple frequencies and multiple bands in noisy RF environments. The tunable filters are fabricated within the same integrated circuit package as the associated frequency based circuitry, thus minimizing R, L, and C parasitic values, and also allowing residual and other parasitic impedance in the associated circuitry and IC package to be absorbed and compensated.
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