公开(公告)号：US20090224166A1

公开(公告)日：2009-09-10

申请号：US12465006

申请日：2009-05-13

申请人： Harumichi Mori ,  Masahiko Honda ,  Ryuji Kyushima ,  Kazuki Fujita

发明人： Harumichi Mori ,  Masahiko Honda ,  Ryuji Kyushima ,  Kazuki Fujita

IPC分类号： G01T1/20 ,  G01N23/04 ,  B32B7/14

CPC分类号： H01L27/14618 ,  G01T1/2018 ,  H01L31/0203 ,  H01L31/02322 ,  H01L2924/0002 ,  H04N5/32 ,  H01L2924/00

摘要： Wiring substrates 11 and 12 are positioned on a fixed base 10 in a manner such that there is a step between the wiring substrates, and radiation imaging elements 2 and 3, respectively having scintillators 25 and 35 deposited on photosensitive portions 21 and 31, are respectively mounted on the wiring substrates 11 and 12. The radiation imaging element 2 is positioned so that its setting surface protrudes beyond a radiation incident surface of the radiation imaging element 3, and the photosensitive portion 21 of the radiation imaging element 2 and the photosensitive portion 31 of the radiation imaging element 3 are juxtaposed to a degree to which the portions do not overlap. The photosensitive portion 21 of the radiation imaging element 2 extends close to an edge at the radiation imaging element 3 side and the scintillator 25 of substantially uniform thickness is formed up to this position.

摘要翻译： 接线基板11和12以分别在布线基板之间形成的台阶和分别具有沉积在感光部21和31上的闪烁体25和35的辐射摄像元件2和3分别位于固定基座10上的方式 安装在布线基板11和12上。放射线成像元件2被定位成使得其设置表面突出超过辐射成像元件3的辐射入射表面，并且辐射成像元件2的感光部分21和感光部分31 放射线成像元件3的一部分并置于该部分不重叠的程度。 辐射摄像元件2的感光部分21靠近辐射摄像元件3侧的边缘延伸，并且形成基本均匀厚度的闪烁器25直至该位置。

公开(公告)号：US09484366B2

公开(公告)日：2016-11-01

申请号：US13774002

申请日：2013-02-22

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Kazuhisa Yamamura ,  Kenichi Sato

IPC分类号： H01L31/107 ,  H01L27/14 ,  H01L27/144 ,  H01L27/146

CPC分类号： H01L27/1446 ,  H01L27/14 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/14636 ,  H01L31/107

摘要： A photodiode array has a plurality of photodetector channels formed on an n-type substrate having an n-type semiconductor layer, with a light to be detected being incident to the photodetector channels. The array comprises: a p−-type semiconductor layer on the n-type semiconductor layer of the substrate; resistors is provided to each of the photodetector channels and is connected to a signal conductor at one end thereof; and an n-type separating part between the plurality of photodetector channels. The p−-type semiconductor layer forms a pn junction at the interface between the substrate, and comprises a plurality of multiplication regions for avalanche multiplication of carriers produced by the incidence of the light to be detected so that each of the multiplication regions corresponds to each of the photodetector channels.

摘要翻译： 光电二极管阵列具有形成在具有n型半导体层的n型衬底上的多个光电检测器通道，待检测的光入射到光电检测器通道。 阵列包括：衬底的n型半导体层上的p型半导体层; 电阻器被提供到每个光电检测器通道并且在其一端连接到信号导体; 以及在所述多个光电检测器通道之间的n型分离部。 p型半导体层在衬底之间的界面处形成pn结，并且包括用于由待检测的光的入射产生的载流子的雪崩乘法的多个乘法区域，使得每个乘法区域对应于每个 的光电检测器通道。