Method of making semi-conductive material for use in semi-conductive devices
    7.
    发明授权
    Method of making semi-conductive material for use in semi-conductive devices 失效
    制造用于半导体器件的半导体材料的方法

    公开(公告)号:US3047380A

    公开(公告)日:1962-07-31

    申请号:US386560

    申请日:1960-01-21

    Applicant: PHILIPS CORP

    Inventor: JAN BLOEM

    Abstract: Germanium is freed from oxygen by adding magnesium, beryllium or titanium and zone refining. Zone refining may be repeated one or more times. 0,1-5 atomic per cent of magnesium based on the molten zone may be employed. As shown a pellet 3 consisting of a 2 to 3 mixture of magnesium and germanium is placed on one end of a bar 2 of germanium in a graphite crucible 1. The crucible is then placed in a quartz tube 4, which is then traversed by an induction heating coil 5 during the passage through the tube of a stream of pure dry hydrogen. After the passage of two molten zones, the end of high magnesium content is cut off and the remainder is treated with an aqueous solution of hydrogen fluoride and nitric acid. A desired amount of a significant impurity may be incorporated in the germanium or a single crystal may be formed during the passage of the second molten zone.

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