公开(公告)号：US07247896B2

公开(公告)日：2007-07-24

申请号：US11090740

申请日：2005-03-24

申请人： Chang-Woo Oh ,  Dong-Gun Park ,  Dong-Won Kim ,  Jeong-Dong Choe

发明人： Chang-Woo Oh ,  Dong-Gun Park ,  Dong-Won Kim ,  Jeong-Dong Choe

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/785 ,  H01L29/0653 ,  H01L29/66795 ,  H01L29/7851 ,  H01L29/78687 ,  Y10S438/933

摘要： A semiconductor device having a field effect transistor and a method of forming the same are provided. The semiconductor device preferably includes a device active pattern disposed on a predetermined region of the substrate. The gate electrode preferably crosses over the device active pattern, interposed by a gate insulation layer. A support pattern is preferably interposed between the device active pattern and the substrate. The support pattern can be disposed under the gate electrode. A filling insulation pattern is preferably disposed between the device active pattern and the filling insulation pattern. The filling insulation pattern may be disposed under the source/drain region. A device active pattern under the gate electrode is preferably formed of a strained silicon having a lattice width wider than a silicon lattice.

摘要翻译： 提供具有场效应晶体管的半导体器件及其形成方法。 半导体器件优选地包括设置在衬底的预定区域上的器件有源图案。 栅电极优选地跨过器件有源图案，由栅极绝缘层插入。 支撑图案优选地插入在器件活性图案和基底之间。 支撑图案可以设置在栅电极下方。 填充绝缘图案优选地设置在装置活性图案和填充绝缘图案之间。 填充绝缘图案可以设置在源极/漏极区域下方。 栅电极下方的器件有源图案优选由具有比硅晶格宽的晶格宽度的应变硅形成。