Abstract:
An exemplary TFT array substrate (200) includes a glass substrate (201); a source electrode (215), a channel (212), and a drain electrode (216) formed on the substrate, the channel being between the source electrode and the drain electrode; a gate insulating layer (203) formed on the channel; a gate electrode (214) formed on the gate insulating layer, and corresponding to the channel; and a passivation layer (206) formed on the source electrode, the drain electrode, the passivation layer having a dielectric constant less than that of the gate insulating layer. A width of the gate insulating layer is less than a corresponding width of each of the gate electrode and the channel, and portions of the passivation layer are located adjacent the gate insulating layer between the gate electrode and the channel.
Abstract:
An exemplary liquid crystal display device (3) includes a first substrate (31), a second substrate (32) opposite to the first substrate, and a liquid crystal layer (34) disposed between the first and second substrates. A number of data lines (322) is disposed on the first substrate. A number of photospacers (36) is disposed on one of the first and second substrates, and the photospacer is disposed over a corresponding one of the data lines and at least partly overlies the corresponding data line. The photospacer has a lower dielectric constant than the liquid crystal layer. Thus, the liquid crystal display device has a lower coupling capacitance between the data lines and other elements. This facilitates a reduction crosstalk during operation of the liquid crystal display device, so that the liquid crystal display can provide better quality images.
Abstract:
A method of forming at least one quantum dot is disclosed. A substrate having a single crystal structure is provided. An insulating layer is formed on the substrate. At least one opening is defined in the insulating layer, thereby exposing at least one corresponding portion of the substrate. At least one quantum dot having a crystal structure is grown, each quantum dot being epitaxially grown on a corresponding exposed portion of the substrate. The insulating layer is removed, thereby obtaining the at least one quantum dot on the substrate.