公开(公告)号：US20110086506A1

公开(公告)日：2011-04-14

申请号：US12965928

申请日：2010-12-13

Applicant: SHUO-TING YAN

Inventor： SHUO-TING YAN

IPC: H01L21/283

CPC classification number: H01L21/7682 ,  H01L21/76802 ,  H01L23/5222 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An exemplary method for fabricating a damascene interconnect structure includes the following. First, providing a substrate. Second, depositing a multilayer dielectric film on the substrate. Third, forming a patterned photoresist on the multilayer dielectric film. Fourth, etching the multilayer dielectric film to form a plurality of trenches, a portion of each of the trenches having an enlarged width at each of sidewalls thereof. Fifth, filling the trenches with conductive metal to form conductive lines such that air is trapped in extremities of the enlarged width portions of the trenches.

Abstract translation: 用于制造镶嵌互连结构的示例性方法包括以下。 首先，提供基板。 其次，在基板上沉积多层电介质膜。 第三，在多层电介质膜上形成图案化的光致抗蚀剂。 第四，蚀刻多层介电膜以形成多个沟槽，每个沟槽的一部分在其每个侧壁处具有扩大的宽度。 第五，用导电金属填充沟槽以形成导电线，使得空气被捕获在沟槽的扩大宽度部分的末端。

公开(公告)号：US20060189104A1

公开(公告)日：2006-08-24

申请号：US11307725

申请日：2006-02-18

Applicant: SHUO-TING YAN

Inventor： SHUO-TING YAN

IPC: H01L21/20

CPC classification number: H01L29/127 ,  B82Y10/00 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02521 ,  H01L21/02639 ,  H01L21/02642

Abstract: A method of forming at least one quantum dot is disclosed. A substrate having a single crystal structure is provided. An insulating layer is formed on the substrate. At least one opening is defined in the insulating layer, thereby exposing at least one corresponding portion of the substrate. At least one quantum dot having a crystal structure is grown, each quantum dot being epitaxially grown on a corresponding exposed portion of the substrate. The insulating layer is removed, thereby obtaining the at least one quantum dot on the substrate.

Abstract translation: 公开了形成至少一个量子点的方法。 提供具有单晶结构的基板。 在基板上形成绝缘层。 在绝缘层中限定至少一个开口，从而暴露基板的至少一个对应部分。 生长具有晶体结构的至少一个量子点，每个量子点在基板的相应的暴露部分上外延生长。 去除绝缘层，由此获得衬底上的至少一个量子点。