利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

125 条记录 (耗时 0.021 秒)

    DAMASCENE FILAMENT WIRE STRUCTURE
    92.
    发明申请
    DAMASCENE FILAMENT WIRE STRUCTURE 审中-公开
    大金属纤维线结构

    公开(公告)号：US20070278624A1

    公开(公告)日：2007-12-06

    申请号：US11839891

    申请日：2007-08-16

    申请人： Brent Anderson ,  Andres Bryant ,  Jeffrey Gambino ,  Anthony Stamper

    发明人： Brent Anderson ,  Andres Bryant ,  Jeffrey Gambino ,  Anthony Stamper

    IPC分类号： H01L23/60

    CPC分类号： H01L21/31144 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76816 ,  H01L21/76831 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A structure. The structure includes a substrate. A first dielectric layer is on and in direct mechanical contact with the substrate. A first hard mask is on the first dielectric layer. A first and second trench is within the first dielectric layer and the first hard mask. The second trench is wider than the first trench. A first conformal liner is on sidewalls of the first and second trenches. The first conformal liner is in direct physical contact with the substrate, the first dielectric layer, and the first hard mask A first conductive material that includes copper fills the first and second trenches. A planar surface of the first conductive material is coplanar with a top surface of the first conformal liner and a top surface of the first hard mask.

    摘要翻译： 一个结构。 该结构包括基底。 第一电介质层与衬底直接机械接触。 第一硬掩模在第一介电层上。 第一和第二沟槽在第一介电层和第一硬掩模内。 第二沟槽比第一沟槽宽。 第一保形衬套位于第一和第二沟槽的侧壁上。 第一共形衬垫与衬底，第一介电层和第一硬掩模直接物理接触。包括铜的第一导电材料填充第一和第二沟槽。 第一导电材料的平坦表面与第一共形衬垫的顶表面和第一硬掩模的顶表面共面。

    METHOD OF MANUFACTURING DUAL ORIENTATION WAFERS
    93.
    发明申请
    METHOD OF MANUFACTURING DUAL ORIENTATION WAFERS 失效
    制造双取向波的方法

    公开(公告)号：US20060286778A1

    公开(公告)日：2006-12-21

    申请号：US11160365

    申请日：2005-06-21

    申请人： Brent Anderson ,  John Ellis-Monaghan ,  Alain Loiseau ,  Kirk Peterson

    发明人： Brent Anderson ,  John Ellis-Monaghan ,  Alain Loiseau ,  Kirk Peterson

    IPC分类号： H01L21/20

    CPC分类号： H01L21/823807 ,  H01L21/823878 ,  H01L21/8252

    摘要： Disclosed is a method of manufacturing dual orientation wafers. A trench is formed in a multi-layer wafer to a silicon substrate with a first crystalline orientation. The trench is filled with a silicon material (e.g., amorphous silicon or polysilicon trench). Isolation structures are formed to isolate the silicon material in the trench from a semiconductor layer with a second crystalline orientation. Additional isolation structures are formed within the silicon material in the trench and within the semiconductor layer. A patterned amorphization process is performed on the silicon material in the trench and followed by a recrystallization anneal such that the silicon material in the trench recrystallizes with the same crystalline orientation as the silicon substrate. The resulting structure is a semiconductor wafer with isolated semiconductor areas on the same plane having different crystalline orientations as well as isolated sections within each semiconductor area for device formation.

    摘要翻译： 公开了制造双取向晶片的方法。 在多层晶片中形成具有第一晶体取向的硅衬底的沟槽。 沟槽填充有硅材料（例如，非晶硅或多晶硅沟槽）。 形成隔离结构以将沟槽中的硅材料与具有第二晶体取向的半导体层隔离。 另外的隔离结构形成在沟槽内和半导体层内的硅材料内。 对沟槽中的硅材料进行图案化非晶化处理，然后进行再结晶退火，使得沟槽中的硅材料以与硅衬底相同的结晶取向重结晶。 所得到的结构是在具有不同晶体取向的同一平面上的隔离半导体区域以及用于器件形成的每个半导体区域内的隔离部分的半导体晶片。

    One way valve and container
    94.
    发明申请
    One way valve and container 有权
    单向阀和容器

    公开(公告)号：US20060131328A1

    公开(公告)日：2006-06-22

    申请号：US11092384

    申请日：2005-03-29

    申请人： Brent Anderson

    发明人： Brent Anderson

    IPC分类号： B65D35/28

    CPC分类号： B65D81/2023 ,  B65D33/2508 ,  B65D77/225 ,  B65D81/2038

    摘要： The present invention provides a one way valve having a valve body, a wall, a fluid inlet, and a fluid outlet. The valve has a plunger which is moveable with respect to the valve body from a first position to a second position. The valve also has a diaphragm positioned in the valve body for movement between a third position and a fourth position when the plunger is in the first position. When the diaphragm is in the third position the fluid outlet is closed and when the diaphragm is in the fourth position the fluid outlet is open.

    摘要翻译： 本发明提供一种具有阀体，壁，流体入口和流体出口的单向阀。 该阀具有可从第一位置到第二位置相对于阀体移动的柱塞。 阀还具有位于阀体中的隔膜，用于当柱塞处于第一位置时在第三位置和第四位置之间移动。 当隔膜处于第三位置时，流体出口关闭，当隔膜处于第四位置时，流体出口打开。

    One way valve for fluid evacuation from a container
    96.
    发明授权
    One way valve for fluid evacuation from a container 有权
    用于从容器排出液体的单向阀

    公开(公告)号：US07552907B2

    公开(公告)日：2009-06-30

    申请号：US12080134

    申请日：2008-04-01

    申请人： Brent Anderson

    发明人： Brent Anderson

    IPC分类号： F16K31/44

    CPC分类号： B65D81/2038

    摘要： The present invention provides a container assembly having: (1) a flexible wall defining fluid tight chamber; (2) a valve body attached to the flexible; (3) a plunger associated with the valve body and moveable with respect to the valve body from a first position to a second position; and (4) a diaphragm positioned in the valve body for opening and closing the valve.

    摘要翻译： 本发明提供了一种容器组件，其具有：（1）限定流体密封室的柔性壁; （2）安装在柔性件上的阀体; （3）与所述阀体相关联并且能够相对于所述阀体从第一位置移动到第二位置的柱塞; 和（4）位于阀体中的用于打开和关闭阀的隔膜。

    Fluids container
    97.
    发明申请
    Fluids container 审中-公开
    流体容器

    公开(公告)号：US20080199110A1

    公开(公告)日：2008-08-21

    申请号：US11207563

    申请日：2005-08-19

    申请人： Brent Anderson ,  Howard W. Schwan

    发明人： Brent Anderson ,  Howard W. Schwan

    IPC分类号： B65D30/10 ,  B65D30/02 ,  B29C63/48

    CPC分类号： B32B38/06 ,  B32B37/08 ,  B32B37/12 ,  B32B2311/00 ,  B32B2317/12 ,  B32B2398/00 ,  B32B2439/46 ,  B65D31/02 ,  B65D2231/001 ,  Y10T156/1023

    摘要： The present invention provides a method for treating a surface of a layered polymeric structure. The method includes the steps of: (1) providing a film having a layered structure formed by adhering first and second non-molten polymeric sheets in an overlap and texturing a surface of the first or second non-molten sheets with a chill roll to form fluid pathways on a surface of the film; (2) attaching an access member to the film; and (3) forming the film into a container having a peripheral seal defining a chamber, and having the fluid pathways facing the chamber and having the fitment providing access to the chamber.

    摘要翻译： 本发明提供了一种处理层状聚合物结构的表面的方法。 该方法包括以下步骤：（1）提供具有层叠结构的薄膜，该薄膜通过将第一和第二非熔融聚合物薄片以重叠的方式粘合而形成，并使第一或第二非熔融薄片的表面具有冷却辊以形成 膜表面上的流体路径; （2）将访问构件附接到所述胶片; 和（3）将膜形成为具有限定腔室的周边密封件的容器，并且具有面向腔室的流体通道并且具有提供通向腔室的通路的容器。

    METHOD OF FORMING DAMASCENE FILAMENT WIRES
    98.
    发明申请
    METHOD OF FORMING DAMASCENE FILAMENT WIRES 有权
    形成大片纤维线的方法

    公开(公告)号：US20080096384A1

    公开(公告)日：2008-04-24

    申请号：US11839767

    申请日：2007-08-16

    申请人： Brent Anderson ,  Andres Bryant ,  Jeffrey Gambino ,  Anthony Stamper

    发明人： Brent Anderson ,  Andres Bryant ,  Jeffrey Gambino ,  Anthony Stamper

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/31144 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76816 ,  H01L21/76831 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of forming a semiconductor device. A first dielectric layer is deposited on and in direct mechanical contact with the substrate. A first hard mask is deposited on the first dielectric layer. A first and second trench is formed within the first dielectric layer and the first hard mask. The second trench is wider than the first trench. A first conformal liner is deposited over the first hard mask and within the first and second trenches, a portion of which is removed, leaving a remaining portion of the first conformal liner in direct physical contact with the substrate, the first dielectric layer, and the first hard mask, and not on the first hard mask. Copper is deposited over the first conformal liner to overfill fill the first and second trenches and is planarized to remove an excess thereof to form a planar surface of the copper.

    摘要翻译： 一种形成半导体器件的方法。 第一电介质层沉积在衬底上并与衬底直接机械接触。 第一硬掩模沉积在第一介电层上。 第一和第二沟槽形成在第一介电层和第一硬掩模内。 第二沟槽比第一沟槽宽。 第一保形衬垫沉积在第一硬掩模之上并且在第一和第二沟槽内，其一部分被去除，留下第一保形衬垫的剩余部分与衬底，第一介电层和 第一个硬面罩，而不是在第一个硬面罩。 铜沉积在第一保形衬垫上以过满填充第一和第二沟槽，并被平坦化以除去其过量以形成铜的平坦表面。