公开(公告)号：US20120025199A1

公开(公告)日：2012-02-02

申请号：US12844642

申请日：2010-07-27

申请人： Szu-Ying Chen ,  Chun-Chieh Chuang ,  Jen-Cheng Liu ,  Dun-Nian Yaung

发明人： Szu-Ying Chen ,  Chun-Chieh Chuang ,  Jen-Cheng Liu ,  Dun-Nian Yaung

IPC分类号： H01L31/02 ,  H01L31/0264 ,  H01L31/0376 ,  H01L31/18

CPC分类号： H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

摘要： Provided is a back side illuminated image sensor device. The image sensor device includes a substrate having a front side and a back side opposite the front side. The image sensor also includes a radiation-detection device that is formed in the substrate. The radiation-detection device is operable to detect a radiation wave that enters the substrate through the back side. The image sensor further includes a deep trench isolation feature that is disposed adjacent to the radiation-detection device. The image sensor device further includes a doped layer that at least partially surrounds the deep trench isolation feature in a conformal manner.

摘要翻译： 提供了背面照明图像传感器装置。 图像传感器装置包括具有与前侧相对的前侧和后侧的基板。 图像传感器还包括形成在基板中的放射线检测装置。 放射线检测装置可操作以检测通过背面进入衬底的辐射波。 图像传感器还包括与辐射检测装置相邻设置的深沟槽隔离特征。 图像传感器装置还包括以保形方式至少部分地围绕深沟槽隔离特征的掺杂层。

公开(公告)号：US07968424B2

公开(公告)日：2011-06-28

申请号：US12355211

申请日：2009-01-16

申请人： Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang ,  Pao-Tung Chen ,  Wen-De Wang ,  Jyh-Ming Hung

发明人： Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang ,  Pao-Tung Chen ,  Wen-De Wang ,  Jyh-Ming Hung

IPC分类号： H01L21/76

CPC分类号： H01L21/76237 ,  H01L21/2652 ,  H01L27/0629 ,  H01L27/1463 ,  H01L27/14683

摘要： Provided is a method of implanting dopant ions to an integrated circuit. The method includes forming a first pixel and a second pixel in a substrate, forming an etch stop layer over the substrate, forming a hard mask layer over the etch stop layer, patterning the hard mask layer to include an opening between the first pixel and the second pixel, and implanting a plurality of dopants through the opening to form an isolation feature.

摘要翻译： 提供了将掺杂剂离子注入集成电路的方法。 该方法包括在衬底中形成第一像素和第二像素，在衬底上形成蚀刻停止层，在蚀刻停止层上方形成硬掩模层，图案化硬掩模层以包括第一像素与第二像素之间的开口 并且通过所述开口植入多个掺杂剂以形成隔离特征。

公开(公告)号：US20100091163A1

公开(公告)日：2010-04-15

申请号：US12557154

申请日：2009-09-10

申请人： Yin-Kai Liao ,  Han-Chi Liu ,  Yuan-Hung Liu ,  Dun-Nian Yaung ,  Jen-Cheng Liu

发明人： Yin-Kai Liao ,  Han-Chi Liu ,  Yuan-Hung Liu ,  Dun-Nian Yaung ,  Jen-Cheng Liu

IPC分类号： H04N5/335 ,  H01L31/0232

CPC分类号： H01L27/14629 ,  H01L21/76829 ,  H01L21/76831 ,  H01L27/14603 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/14685 ,  H04N3/155

摘要： A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region and a logic region. A first resist protect oxide (RPO) is formed over the pixel region, but not over the logic region. Silicide contacts are formed on the top of active devices formed in the pixel region, but not on the surface of the substrate in the pixel region, and silicide contacts are formed both on the top of active devices and on the surface of the substrate in the logic region. A second RPO is formed over the pixel region and the logic region, and a contact etch stop layer is formed over the second RPO. These layers help to reflect light back to the image sensor when light impinges the sensor from the backside of the substrate, and also helps prevent damage that occurs from overetching.

摘要翻译： 公开了一种用于图像感测的系统和方法。 实施例包括具有像素区域和逻辑区域的基板。 在像素区域上形成第一抗蚀保护氧化物（RPO），但不在逻辑区域上。 硅化物接触形成在像素区域中形成的有源器件的顶部上，而不是在像素区域中的衬底的表面上，并且在有源器件的顶部和衬底的表面上形成硅化物接触 逻辑区域。 在像素区域和逻辑区域上形成第二RPO，并且在第二RPO上形成接触蚀刻停止层。 当光从基板的背面入射传感器时，这些层有助于将光反射回图像传感器，并且还有助于防止由过蚀刻引起的损坏。

公开(公告)号：US20090189233A1

公开(公告)日：2009-07-30

申请号：US12020149

申请日：2008-01-25

申请人： Jen-Cheng Liu ,  Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Chi-Hsin Lo ,  Feng-Jia Shiu ,  Chung-Yi Yu

发明人： Jen-Cheng Liu ,  Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Chi-Hsin Lo ,  Feng-Jia Shiu ,  Chung-Yi Yu

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/14625 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14685

摘要： An optical image sensor is fabricated by forming a pixel array and a peripheral region surrounding the pixel array on a semiconductor substrate, the peripheral region containing peripheral circuitry. An inter-level-dielectric layer is formed over the substrate and a plurality of interconnect wiring layers are formed over the inter-level-dielectric layer. Each interconnect wiring layer includes interconnecting metal features and a layer of inter-level-dielectric material covering the interconnecting metal features. The plurality of interconnect wiring layers are provided in a manner that there are N levels of wiring layers in the peripheral region and 1 to (N−1) levels of wiring layers over the pixel array. An etch-stop layer is formed over the top-most level interconnecting metal features in the peripheral region.

摘要翻译： 通过在半导体衬底上形成围绕像素阵列的像素阵列和外围区域来制造光学图像传感器，该外围区域包含外围电路。 层间电介质层形成在衬底之上，并且在层间电介质层之上形成多个互连布线层。 每个互连布线层包括互连金属特征和覆盖互连金属特征的层间电介质材料层。 多个互连布线层的设置方式是在像素阵列的周边区域中有N层布线层和布线层的1层（N-1）层。 在外围区域中最顶层的互连金属特征上形成蚀刻停止层。

公开(公告)号：US20080246063A1

公开(公告)日：2008-10-09

申请号：US11752012

申请日：2007-05-22

申请人： Jen-Cheng Liu ,  Dun-Nian Yaung ,  Jyh-Ming Hung ,  Wen-De Wang ,  Chun-Chieh Chuang

发明人： Jen-Cheng Liu ,  Dun-Nian Yaung ,  Jyh-Ming Hung ,  Wen-De Wang ,  Chun-Chieh Chuang

IPC分类号： H01L31/113 ,  H01L31/0232

CPC分类号： H01L27/14643 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14689 ,  H01L27/14812

摘要： The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate; a first epitaxy semiconductor layer disposed on the semiconductor substrate and having a first type of dopant and a first doping concentration; a second epitaxy semiconductor layer disposed over the first epitaxy semiconductor layer and having the first type of dopant and a second doping concentration less than the first doping concentration; and an image sensor on the second epitaxy semiconductor layer.

摘要翻译： 本公开提供了一种图像传感器半导体器件。 半导体器件包括半导体衬底; 第一外延半导体层，其设置在所述半导体衬底上并且具有第一类型的掺杂剂和第一掺杂浓度; 第二外延半导体层，设置在所述第一外延半导体层上并且具有所述第一类型的掺杂物和小于所述第一掺杂浓度的第二掺杂浓度; 以及第二外延半导体层上的图像传感器。

公开(公告)号：US09041841B2

公开(公告)日：2015-05-26

申请号：US12557154

申请日：2009-09-10

申请人： Yin-Kai Liao ,  Han-Chi Liu ,  Yuan-Hung Liu ,  Dun-Nian Yaung ,  Jen-Cheng Liu

发明人： Yin-Kai Liao ,  Han-Chi Liu ,  Yuan-Hung Liu ,  Dun-Nian Yaung ,  Jen-Cheng Liu

IPC分类号： H04N3/14 ,  H04N5/335 ,  H01L27/146

CPC分类号： H01L27/14629 ,  H01L21/76829 ,  H01L21/76831 ,  H01L27/14603 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/14685 ,  H04N3/155

摘要： A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region and a logic region. A first resist protect oxide (RPO) is formed over the pixel region, but not over the logic region. Silicide contacts are formed on the top of active devices formed in the pixel region, but not on the surface of the substrate in the pixel region, and silicide contacts are formed both on the top of active devices and on the surface of the substrate in the logic region. A second RPO is formed over the pixel region and the logic region, and a contact etch stop layer is formed over the second RPO. These layers help to reflect light back to the image sensor when light impinges the sensor from the backside of the substrate, and also helps prevent damage that occurs from overetching.

摘要翻译： 公开了一种用于图像感测的系统和方法。 实施例包括具有像素区域和逻辑区域的基板。 在像素区域上形成第一抗蚀保护氧化物（RPO），但不在逻辑区域上。 硅化物接触形成在像素区域中形成的有源器件的顶部上，而不是在像素区域中的衬底的表面上，并且在有源器件的顶部和衬底的表面上形成硅化物接触 逻辑区域。 在像素区域和逻辑区域上形成第二RPO，并且在第二RPO上形成接触蚀刻停止层。 当光从基板的背面入射传感器时，这些层有助于将光反射回图像传感器，并且还有助于防止由过蚀刻引起的损坏。

公开(公告)号：US08952497B2

公开(公告)日：2015-02-10

申请号：US13619705

申请日：2012-09-14

申请人： U-Ting Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Jeng-Shyan Lin ,  Shuang-Ji Tsai

发明人： U-Ting Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Jeng-Shyan Lin ,  Shuang-Ji Tsai

IPC分类号： H01L21/78 ,  H01L23/00

CPC分类号： H01L21/78 ,  H01L22/32 ,  H01L22/34 ,  H01L23/562 ,  H01L23/585 ,  H01L27/1464 ,  H01L27/14683 ,  H01L2924/0002 ,  H01L2924/00

摘要： A wafer includes a plurality of chips arranged as rows and columns. A first plurality of scribe lines is between the rows of the plurality of chips. Each of the first plurality of scribe lines includes a metal-feature containing scribe line comprising metal features therein, and a metal-feature free scribe line parallel to, and adjoining, the metal-feature containing scribe line. A second plurality of scribe lines is between the columns of the plurality of chips.

摘要翻译： 晶片包括排列成行和列的多个芯片。 第一组多个划痕线在多个芯片的行之间。 第一多个划线中的每一个包括含有金属特征的金属特征，其中包含金属特征，以及与金属特征的划线相平行并相邻的金属特征自由划线。 第二多个划线在多个芯片的列之间。

公开(公告)号：US08709854B2

公开(公告)日：2014-04-29

申请号：US13620016

申请日：2012-09-14

申请人： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Keng-Yu Chou ,  Shuang-Ji Tsai ,  Min-Feng Kao

发明人： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Keng-Yu Chou ,  Shuang-Ji Tsai ,  Min-Feng Kao

IPC分类号： H01L21/00

CPC分类号： H01L27/14685 ,  G02B1/11 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L31/02161 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

摘要： BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.

摘要翻译： BSI图像传感器和方法。 在一个实施例中，提供具有传感器阵列和周边区域并具有前侧和后侧表面的基板; 底部抗反射涂层（BARC）在传感器阵列区域和外围区域的上方形成在第一厚度的背侧上; 在BARC上形成第一介电层; 形成金属屏蔽; 从所述传感器阵列区域上方选择性地去除所述金属屏蔽件; 从所述传感器阵列区域上方选择性地去除所述第一介电层，其中所述BARC的第一厚度的一部分也被去除，并且在选择性地去除所述第一介电层的过程中所述BARC的第一厚度的剩余部分保留; 在BARC的其余部分和金属屏蔽层之上形成第二电介质层; 以及在所述第二介电层上形成钝化层。

公开(公告)号：US20140077320A1

公开(公告)日：2014-03-20

申请号：US13619705

申请日：2012-09-14

申请人： U-Ting Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Jeng-Shyan Lin ,  Shuang-Ji Tsai

发明人： U-Ting Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Jeng-Shyan Lin ,  Shuang-Ji Tsai

IPC分类号： H01L23/544 ,  H01L21/78 ,  H01L27/146

CPC分类号： H01L21/78 ,  H01L22/32 ,  H01L22/34 ,  H01L23/562 ,  H01L23/585 ,  H01L27/1464 ,  H01L27/14683 ,  H01L2924/0002 ,  H01L2924/00

摘要： A wafer includes a plurality of chips arranged as rows and columns. A first plurality of scribe lines is between the rows of the plurality of chips. Each of the first plurality of scribe lines includes a metal-feature containing scribe line comprising metal features therein, and a metal-feature free scribe line parallel to, and adjoining, the metal-feature containing scribe line. A second plurality of scribe lines is between the columns of the plurality of chips.

摘要翻译： 晶片包括排列成行和列的多个芯片。 第一组多个划痕线在多个芯片的行之间。 第一多个划线中的每一个包括含有金属特征的金属特征，其中包含金属特征，以及与金属特征的划线相平行并相邻的金属特征自由划线。 第二多个划线在多个芯片的列之间。

公开(公告)号：US08674467B2

公开(公告)日：2014-03-18

申请号：US13545450

申请日：2012-07-10

申请人： Wen-De Wang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang ,  Jeng-Shyan Lin

发明人： Wen-De Wang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang ,  Jeng-Shyan Lin

IPC分类号： H01L27/146 ,  H01L31/00

CPC分类号： H01L27/14685 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464

摘要： Provided is a method of fabricating an image sensor device. The method includes providing a device substrate having a front side and a back side. The method includes forming first and second radiation-sensing regions in the device substrate, the first and second radiation-sensing regions being separated by an isolation structure. The method also includes forming a transparent layer over the back side of the device substrate. The method further includes forming an opening in the transparent layer, the opening being aligned with the isolation structure. The method also includes filling the opening with an opaque material.

摘要翻译： 提供了一种制造图像传感器装置的方法。 该方法包括提供具有前侧和后侧的装置基板。 该方法包括在器件衬底中形成第一和第二辐射感测区域，第一和第二辐射感测区域由隔离结构隔开。 该方法还包括在器件衬底的背面上形成透明层。 该方法还包括在透明层中形成开口，该开口与隔离结构对准。 该方法还包括用不透明材料填充开口。