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公开(公告)号：US08952497B2
公开(公告)日：2015-02-10
申请号：US13619705
申请日：2012-09-14
申请人： U-Ting Chen , Dun-Nian Yaung , Jen-Cheng Liu , Feng-Chi Hung , Jeng-Shyan Lin , Shuang-Ji Tsai
发明人： U-Ting Chen , Dun-Nian Yaung , Jen-Cheng Liu , Feng-Chi Hung , Jeng-Shyan Lin , Shuang-Ji Tsai
CPC分类号： H01L21/78 , H01L22/32 , H01L22/34 , H01L23/562 , H01L23/585 , H01L27/1464 , H01L27/14683 , H01L2924/0002 , H01L2924/00
摘要： A wafer includes a plurality of chips arranged as rows and columns. A first plurality of scribe lines is between the rows of the plurality of chips. Each of the first plurality of scribe lines includes a metal-feature containing scribe line comprising metal features therein, and a metal-feature free scribe line parallel to, and adjoining, the metal-feature containing scribe line. A second plurality of scribe lines is between the columns of the plurality of chips.
摘要翻译： 晶片包括排列成行和列的多个芯片。 第一组多个划痕线在多个芯片的行之间。 第一多个划线中的每一个包括含有金属特征的金属特征，其中包含金属特征，以及与金属特征的划线相平行并相邻的金属特征自由划线。 第二多个划线在多个芯片的列之间。
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公开(公告)号：US20140077320A1
公开(公告)日：2014-03-20
申请号：US13619705
申请日：2012-09-14
申请人： U-Ting Chen , Dun-Nian Yaung , Jen-Cheng Liu , Feng-Chi Hung , Jeng-Shyan Lin , Shuang-Ji Tsai
发明人： U-Ting Chen , Dun-Nian Yaung , Jen-Cheng Liu , Feng-Chi Hung , Jeng-Shyan Lin , Shuang-Ji Tsai
IPC分类号： H01L23/544 , H01L21/78 , H01L27/146
CPC分类号： H01L21/78 , H01L22/32 , H01L22/34 , H01L23/562 , H01L23/585 , H01L27/1464 , H01L27/14683 , H01L2924/0002 , H01L2924/00
摘要： A wafer includes a plurality of chips arranged as rows and columns. A first plurality of scribe lines is between the rows of the plurality of chips. Each of the first plurality of scribe lines includes a metal-feature containing scribe line comprising metal features therein, and a metal-feature free scribe line parallel to, and adjoining, the metal-feature containing scribe line. A second plurality of scribe lines is between the columns of the plurality of chips.
摘要翻译： 晶片包括排列成行和列的多个芯片。 第一组多个划痕线在多个芯片的行之间。 第一多个划线中的每一个包括含有金属特征的金属特征，其中包含金属特征，以及与金属特征的划线相平行并相邻的金属特征自由划线。 第二多个划线在多个芯片的列之间。
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公开(公告)号：US09040891B2
公开(公告)日：2015-05-26
申请号：US13492348
申请日：2012-06-08
申请人： U-Ting Chen , Dun-Nian Yaung , Jen-Cheng Liu , Yu-Hao Shih , Chih-Chien Wang , Shih Pei Chou , Wei-Tung Huang , Cheng-Ta Wu
发明人： U-Ting Chen , Dun-Nian Yaung , Jen-Cheng Liu , Yu-Hao Shih , Chih-Chien Wang , Shih Pei Chou , Wei-Tung Huang , Cheng-Ta Wu
IPC分类号： H01L27/00 , H01L21/033 , H01L27/146
CPC分类号： H01L21/0334 , H01L21/0337 , H01L27/14603 , H01L27/1464 , H01L27/14689
摘要： A method of forming of an image sensor device includes a substrate having a pixel region and a periphery region. A plurality of first trenches is etched in the periphery region. Each of the first trenches has a depth D1. A mask layer is formed over the substrate. The mask layer has a plurality of openings in the pixel region. A spacer is formed in an interior surface of each opening. A plurality of second trenches is etched through each opening having the spacer in the pixel region. Each of the second trenches has a depth D2. The depth D1 is larger than the depth D2.
摘要翻译： 形成图像传感器装置的方法包括具有像素区域和周边区域的基板。 在周边区域中蚀刻多个第一沟槽。 每个第一沟槽具有深度D1。 掩模层形成在衬底上。 掩模层在像素区域中具有多个开口。 间隔件形成在每个开口的内表面中。 通过在像素区域中具有间隔物的每个开口蚀刻多个第二沟槽。 每个第二沟槽具有深度D2。 深度D1大于深度D2。
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公开(公告)号：US20130327921A1
公开(公告)日：2013-12-12
申请号：US13492348
申请日：2012-06-08
申请人： U-Ting CHEN , Dun-Nian YAUNG , Jen-Cheng LIU , Yu-Hao SHIH , Chih-Chien WANG , Shih Pei CHOU , Wei-Tung HUANG , Cheng-Ta WU
发明人： U-Ting CHEN , Dun-Nian YAUNG , Jen-Cheng LIU , Yu-Hao SHIH , Chih-Chien WANG , Shih Pei CHOU , Wei-Tung HUANG , Cheng-Ta WU
IPC分类号： H01L31/18 , H01L27/146
CPC分类号： H01L21/0334 , H01L21/0337 , H01L27/14603 , H01L27/1464 , H01L27/14689
摘要： A method of forming of an image sensor device includes a substrate having a pixel region and a periphery region. A plurality of first trenches is etched in the periphery region. Each of the first trenches has a depth D1. A mask layer is formed over the substrate. The mask layer has a plurality of openings in the pixel region. A spacer is formed in an interior surface of each opening. A plurality of second trenches is etched through each opening having the spacer in the pixel region. Each of the second trenches has a depth D2. The depth D1 is larger than the depth D2.
摘要翻译： 形成图像传感器装置的方法包括具有像素区域和周边区域的基板。 在周边区域中蚀刻多个第一沟槽。 每个第一沟槽具有深度D1。 掩模层形成在衬底上。 掩模层在像素区域中具有多个开口。 间隔件形成在每个开口的内表面中。 通过在像素区域中具有间隔物的每个开口蚀刻多个第二沟槽。 每个第二沟槽具有深度D2。 深度D1大于深度D2。
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