公开(公告)号：US20120043631A1

公开(公告)日：2012-02-23

申请号：US13193935

申请日：2011-07-29

申请人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

发明人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/10

摘要： A magnetic memory element includes a memory layer, a reference layer, and a spin-injection layer provided between the memory layer and the reference layer. The reference layer has a structure in which at least two CoPt layers containing 20 atomic % or more and 50 atomic % or less of Pt and having a thickness of 1 nm or more and 5 nm or less are stacked with a Ru layer provided therebetween. The thickness of the Ru layer is 0.45±0.05 nm or 0.9±0.1 nm. In addition, the axis of 3-fold crystal symmetry of the CoPt layers is oriented perpendicularly to the film surface. The reference layer includes a high spin polarization layer of 1.5 nm or less containing Co or Fe as a main component at an interface with the spin-injection layer.

摘要翻译： 磁存储元件包括存储层，参考层和设置在存储层和参考层之间的自旋注入层。 参考层具有其中包含20原子％以上且50原子％以下的Pt，厚度为1nm以上且5nm以下的至少两个CoPt层以其间设置有Ru层的层叠体的结构。 Ru层的厚度为0.45±0.05nm或0.9±0.1nm。 此外，CoPt层的3倍晶体对称轴垂直于膜表面取向。 参考层包括在与自旋注入层的界面处含有Co或Fe作为主要成分的1.5nm以下的高自旋极化层。

公开(公告)号：US20120002466A1

公开(公告)日：2012-01-05

申请号：US13155099

申请日：2011-06-07

申请人： Yutaka Higo ,  Hiroyuki Uchida ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Masanori Hosomi ,  Kazutaka Yamane

发明人： Yutaka Higo ,  Hiroyuki Uchida ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Masanori Hosomi ,  Kazutaka Yamane

IPC分类号： G11C11/14

CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673

摘要： Disclosed herein is a storage apparatus including a cell array configured to include storage devices arranged to form an array. Each of the storage device has: a storage layer for storing information as the state of magnetization of a magnetic substance; a fixed-magnetization layer having a fixed magnetization direction; and a tunnel insulation layer sandwiched between the storage layer and the fixed-magnetization layer. In an operation to write information on the storage layer, a write current is generated to flow in the layer-stacking direction of the storage layer and the fixed-magnetization layer in order to change the direction of the magnetization of the storage layer. The cell array is divided into a plurality of cell blocks. The thermal stability of the storage layer of any particular one of the storage devices has a value peculiar to the cell block including the particular storage device.

摘要翻译： 这里公开了一种存储装置，其包括被配置为包括布置成形成阵列的存储装置的单元阵列。 每个存储装置具有：用于存储作为磁性物质的磁化状态的信息的存储层; 具有固定磁化方向的固定磁化层; 以及夹在所述存储层和所述固定磁化层之间的隧道绝缘层。 在存储层上写入信息的操作中，产生写入电流以在存储层和固定磁化层的层叠方向上流动，以改变存储层的磁化方向。 单元阵列被分成多个单元块。 任何特定存储设备的存储层的热稳定性具有包括特定存储设备的单元块特有的值。

公开(公告)号：US20110316103A1

公开(公告)日：2011-12-29

申请号：US13163215

申请日：2011-06-17

申请人： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane

发明人： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane

IPC分类号： H01L29/82 ,  H01L43/12

CPC分类号： H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3286 ,  H01F10/329 ,  H01F41/307 ,  H01L43/08

摘要： Disclosed herein is a storage element, including: a storage layer configured to retain information based on a magnetization state of a magnetic material; and a magnetization pinned layer configured to be provided for the storage layer with intermediary of a tunnel barrier layer, wherein the tunnel barrier layer has a thickness not less than or equal to 0.1 nm to not more than or equal to 0.6 nm and interface roughness less than 0.5 nm, and information is stored in the storage layer through change in direction of magnetization of the storage layer by applying a current in a stacking direction and injecting a spin-polarized electron.

摘要翻译： 这里公开了一种存储元件，包括：存储层，被配置为基于磁性材料的磁化状态来保持信息; 以及被配置为提供具有隧道势垒层的介质的存储层的磁化固定层，其中所述隧道势垒层具有不小于或等于0.1nm至不大于或等于0.6nm的厚度，并且界面粗糙度减去 通过在层叠方向施加电流并注入自旋极化电子，通过存储层的磁化方向的变化来将信息存储在存储层中。

公开(公告)号：US20110310663A1

公开(公告)日：2011-12-22

申请号：US13104693

申请日：2011-05-10

申请人： Kazuhiro Bessho ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

发明人： Kazuhiro Bessho ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC分类号： G11C11/15 ,  G11C5/14

CPC分类号： G11C11/16 ,  G11C11/161 ,  G11C11/1675

摘要： Disclosed herein is a method for driving a storage element that has a plurality of magnetic layers and performs recording by utilizing spin torque magnetization reversal, the method including applying a pulse voltage having reverse polarity of polarity of a recording pulse voltage in application of the recording pulse voltage to the storage element.

摘要翻译： 本发明公开了一种驱动具有多个磁性层并通过利用自旋转矩磁化反转进行记录的存储元件的方法，该方法包括在施加记录脉冲时应用具有与记录脉冲电压极性相反的极性的脉冲电压 电压到存储元件。

公开(公告)号：US09147455B2

公开(公告)日：2015-09-29

申请号：US13334351

申请日：2011-12-22

申请人： Kazuhiro Bessho ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida ,  Tetsuya Asayama

发明人： Kazuhiro Bessho ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida ,  Tetsuya Asayama

IPC分类号： H01L29/82 ,  G11C11/16

CPC分类号： G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

摘要： A storage element includes: a storage layer which has magnetization perpendicular to a film surface, the direction of the magnetization being changed in accordance with information; a magnetization fixed layer which has magnetization perpendicular to a film surface used as a base of information stored in the storage layer; and an insulating layer of a nonmagnetic substance provided between the storage layer and the magnetization fixed layer. In the storage element described above, the magnetization of the storage layer is reversed using a spin torque magnetization reversal generated by a current flowing in a lamination direction of a layer structure including the storage layer, the insulating layer, and the magnetization fixed layer to store information, and the storage layer has a laminate structure including a magnetic layer and a conductive oxide.

摘要翻译： 存储元件包括：具有垂直于膜表面的磁化的存储层，磁化方向根据信息而改变; 磁化固定层，其具有与用作存储在存储层中的信息的基底的膜表面垂直的磁化; 以及设置在所述存储层和所述磁化固定层之间的非磁性物质的绝缘层。 在上述存储元件中，使用由包括存储层，绝缘层和磁化固定层的层结构的层叠方向流动的电流产生的自旋转矩磁化反转来使存储层的磁化反转，以存储 信息，并且存储层具有包括磁性层和导电氧化物的层压结构。

公开(公告)号：US08750035B2

公开(公告)日：2014-06-10

申请号：US13217925

申请日：2011-08-25

申请人： Kazuhiro Bessho ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

发明人： Kazuhiro Bessho ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC分类号： G11C11/14

CPC分类号： H01L43/02 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/16 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08

摘要： There is disclosed a memory element including a memory layer that maintains information through the magnetization state of a magnetic material, a magnetization-fixed layer with a magnetization that is a reference of information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer. The storing of the information is performed by inverting the magnetization of the memory layer by using a spin torque magnetization inversion occurring according to a current flowing in the lamination direction of a layered structure having the memory layer, the intermediate layer, and the magnetization-fixed layer, the memory layer includes an alloy region containing at least one of Fe and Co, and a magnitude of an effective diamagnetic field which the memory layer receives during magnetization inversion thereof is smaller than the saturated magnetization amount of the memory layer.

摘要翻译： 公开了一种存储元件，其包括通过磁性材料的磁化状态保持信息的存储层，作为存储在存储层中的信息的参考的磁化的磁化固定层，以及由 非磁性材料，并且设置在存储层和磁化固定层之间。 通过使用根据在具有存储层，中间层和磁化固定的层叠结构的层叠方向上流动的电流发生的自旋转矩磁化反转而使存储层的磁化反转来进行信息的存储 存储层包括含有Fe和Co中的至少一种的合金区域，并且存储层在其磁化反转期间接收的有效抗磁场的大小小于存储层的饱和磁化量。

公开(公告)号：US08742519B2

公开(公告)日：2014-06-03

申请号：US13150995

申请日：2011-06-01

申请人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Hiroyuki Uchida

发明人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Hiroyuki Uchida

IPC分类号： H01L29/82 ,  G11C11/15

CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/224 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： Disclosed herein is a magnetic storage element including: a reference layer configured to have a magnetization direction fixed to a predetermined direction; a recording layer configured to have a magnetization direction that changes due to spin injection in a direction corresponding to recording information; an intermediate layer configured to separate the recording layer from the reference layer; and a heat generator configured to heat the recording layer. A material of the recording layer is such a magnetic material that magnetization at 150° C. is at least 50% of magnetization at a room temperature and magnetization at a temperature in a range from 150° C. to 200° C. is in a range from 10% to 80% of magnetization at a room temperature.

摘要翻译： 这里公开了一种磁存储元件，包括：参考层，其被配置为具有固定到预定方向的磁化方向; 记录层，被配置为具有在与记录信息相对应的方向上由于自旋注入而改变的磁化方向; 中间层，被配置为将记录层与参考层分离; 以及被配置为加热记录层的发热体。 记录层的材料是这样一种磁性材料，其在150℃下的磁化是在室温下的磁化强度至少为50％，并且在150℃至200℃范围内的温度下的磁化处于 在室温下磁化强度为10％至80％。

公开(公告)号：US20120175716A1

公开(公告)日：2012-07-12

申请号：US13332664

申请日：2011-12-21

申请人： Kazuhiro Bessho ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida ,  Tetsuya Asayama

发明人： Kazuhiro Bessho ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida ,  Tetsuya Asayama

IPC分类号： H01L29/82

CPC分类号： G11C11/161

摘要： A storage element includes: a storage layer which has magnetization perpendicular to a film surface, the direction of the magnetization being changed in accordance with information; a magnetization fixed layer which has magnetization perpendicular to a film surface used as a base of information stored in the storage layer; and an insulating layer of a nonmagnetic substance provided between the storage layer and the magnetization fixed layer. In the storage element described above, the magnetization of the storage layer is reversed using a spin torque magnetization reversal generated by a current flowing in a lamination direction of a layer structure including the storage layer, the insulating layer, and the magnetization fixed layer to store information, the storage layer is directly provided with a layer at a side opposite to the insulating layer, and this layer includes a conductive oxide.

摘要翻译： 存储元件包括：具有垂直于膜表面的磁化的存储层，磁化方向根据信息而改变; 磁化固定层，其具有与用作存储在存储层中的信息的基底的膜表面垂直的磁化; 以及设置在所述存储层和所述磁化固定层之间的非磁性物质的绝缘层。 在上述存储元件中，使用由包括存储层，绝缘层和磁化固定层的层结构的层叠方向流动的电流产生的自旋转矩磁化反转来使存储层的磁化反转，以存储 信息中，存储层在与绝缘层相反的一侧直接设置有层，该层包括导电氧化物。

公开(公告)号：US20120155158A1

公开(公告)日：2012-06-21

申请号：US13306451

申请日：2011-11-29

申请人： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Kazutaka Yamane ,  Hiroyuki Uchida ,  Tetsuya Asayama

发明人： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Kazutaka Yamane ,  Hiroyuki Uchida ,  Tetsuya Asayama

IPC分类号： G11C11/16

CPC分类号： G11C11/1677 ,  G11C11/161 ,  G11C11/1675 ,  G11C19/00

摘要： A storage device is provided with a plurality of pairs of memory blocks, which have a storage layer which stores information and is configured to have a plurality of storage elements which store the information in the storage layer by the orientation of the magnetization of the storage layer being changed in accordance with the application of a writing voltage and so that selective application of the writing voltage is possible in accordance with input information to one storage element, and writing control sections, which store information which is to be written into each of the storage elements in a shift register, output one piece of information from the shift register, determine whether or not writing of the output information succeeds, and when writing has failed, the same information is output again, and when writing is successful, the next piece of information is output from the shift register.

摘要翻译： 存储装置设置有多对存储块，存储块存储信息，并且被配置为具有通过存储层的磁化方向将信息存储在存储层中的多个存储元件 根据写入电压的应用而改变，并且可以根据对一个存储元件的输入信息选择性地施加写入电压;以及写入控制部分，其将要写入的信息存储到每个存储器 移位寄存器中的元素，从移位寄存器输出一条信息，确定输出信息的写入是否成功，写入失败时，再次输出相同的信息，写入成功时，下一个 从移位寄存器输出信息。

公开(公告)号：US20120063222A1

公开(公告)日：2012-03-15

申请号：US13227144

申请日：2011-09-07

申请人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Hiroyuki Uchida

发明人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Hiroyuki Uchida

IPC分类号： G11C11/15

CPC分类号： G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and a Ta film is formed in such a manner that comes into contact with a face, which is opposite to the insulating layer side, of the magnetization-fixed layer.

摘要翻译： 公开了一种存储元件，其包括具有垂直于膜面的磁化和其磁化方向根据信息而变化的存储层; 具有垂直于膜面的磁化的磁化固定层; 以及设置在所述存储层和所述磁化固定层之间的绝缘层，其中在层状结构的层叠方向上注入自旋极化的电子，从而存储层的磁化方向变化，并且记录 相对于存储层执行信息，存储层接收的有效抗磁场的大小小于存储层的饱和磁化量，并且以与膜的接触形式形成Ta膜 与磁化固定层的绝缘层侧相对的面。