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公开(公告)号：US20060071888A1
公开(公告)日：2006-04-06
申请号：US11213320
申请日：2005-08-26
IPC分类号： G09G3/32
CPC分类号： G09G3/3266 , G09G3/3233 , G09G2300/0819 , G09G2300/0842 , G09G2300/0852 , G09G2300/0861 , G09G2320/043 , G09G2330/045 , G09G2360/16
摘要： A light emitting display and a driving method thereof. The light emitting display includes an image displaying part including a plurality of pixels electrically connected to a plurality of scan lines, a plurality of data lines, and a plurality of emission control lines. A controller generates a start signal having a pulse width corresponding to a number of ‘1s’ or ‘0s’ of video data. A data driver converts the video data into a data signal to supply the data signal to the data lines. A scan driver supplies a scan signal to the scan lines, and an emission control signal supplier generates an emission control signal for controlling an emitting period of at least one of the pixels in response to a start signal supplied from the controller and supplies the emission control signal to the emission control lines.
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92.发明申请公开(公告)号：US20060065929A1
公开(公告)日：2006-03-30
申请号：US11095073
申请日：2005-03-31
IPC分类号： H01L27/12
CPC分类号： H03H9/0542 , H01L27/0605 , H01L29/2003 , H01L29/7787 , H03H3/08
摘要： Provided is a nitride-based semiconductor device in which a SAW filter and a HFET are integrated on a single substrate, as well as a method for manufacturing the same. The nitride-based semiconductor device comprises a semi-insulating GaN layer formed on a substrate, a plurality of electrodes for a SAW filter formed on one side of the semi-insulating GaN layer, an Al-doped GaN layer formed on the other side of the semi-insulating GaN layer, an AlGaN layer formed on the Al-doped GaN layer, and a plurality of electrodes for an HFET formed on the AlGaN layer. Both sides of the semi-insulating GaN layer have the same surface level.
摘要翻译： 提供了一种其中SAW滤波器和HFET集成在单个基板上的氮化物基半导体器件及其制造方法。 氮化物类半导体器件包括形成在衬底上的半绝缘GaN层，形成在半绝缘GaN层的一侧上的用于SAW滤波器的多个电极，形成在半绝缘GaN层的另一侧上的Al掺杂GaN层 半绝缘GaN层，形成在Al掺杂GaN层上的AlGaN层和在AlGaN层上形成的多个用于HFET的电极。 半绝缘GaN层的两侧具有相同的表面水平。
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公开(公告)号：US20060055999A1
公开(公告)日：2006-03-16
申请号：US11171146
申请日：2005-06-29
IPC分类号： G02F1/03
CPC分类号： H01L27/3246 , H01L27/3211 , H01L27/3251 , H01L51/56
摘要： An organic electro luminescence device is presented in which ink forming an organic electro luminescent layer is prevented from overflowing edges of a pixel region. The organic electro luminescent device includes first and second substrates and sub-pixels in the first and second substrates. An array element includes a thin film transistor formed on the first substrate in each sub-pixel. A first electrode is formed at an inner surface of the second substrate. A buffer is formed at an outer region to partition each sub-pixel formed on the first electrode. A first electrode separator is formed on the buffer and a second electrode separator is formed in a region including a stepped portion of the buffer. An organic electro luminescent layer is formed within a region partitioned by the second electrode separator. A second electrode is formed on the second substrate where the organic electro luminescent layer is formed.
摘要翻译： 提出了一种有机电致发光器件，其中防止形成有机电致发光层的墨水溢出像素区域的边缘。 有机电致发光器件包括第一和第二衬底中的第一和第二衬底和子像素。 阵列元件包括形成在每个子像素中的第一衬底上的薄膜晶体管。 第一电极形成在第二基板的内表面。 在外部区域形成缓冲器，以分隔形成在第一电极上的每个子像素。 在缓冲器上形成第一电极分离器，并且在包括缓冲器的阶梯部分的区域中形成第二电极分离器。 在由第二电极隔膜分隔的区域内形成有机电致发光层。 第二电极形成在形成有机电致发光层的第二基板上。
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94.发明申请Anthracene derivatives and organic light emitting device using the same as a light emitting material 审中-公开蒽衍生物和使用其作为发光材料的有机发光器件公开(公告)号：US20060046097A1
公开(公告)日：2006-03-02
申请号：US11217406
申请日：2005-09-02
CPC分类号： C07C15/28 , C07C15/38 , C07C2603/24 , C07C2603/50 , C09K11/06 , C09K2211/1007 , C09K2211/1011 , C09K2211/1029 , C09K2211/1037 , C09K2211/1088 , H01L51/0058 , H01L51/0071 , H01L51/5012 , H05B33/14
摘要： Disclosed is a compound of Formula 1 and an organic light emitting device using the same. In Formula 1, R1, R2, and R3 each independently is selected from the group consisting of a phenyl group, an 1-naphthyl group, a 2-naphthyl group, and a pyrene.
摘要翻译： 公开了式1的化合物和使用其的有机发光装置。 在式1中，R 1，R 2和R 3各自独立地选自苯基，1-萘基，2-萘基和芘。
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公开(公告)号：US20060037344A1
公开(公告)日：2006-02-23
申请号：US11046685
申请日：2005-02-01
申请人： Eun Cho , Yun Ryu , Young Choi , Baik Cheong , Jae Lee
发明人： Eun Cho , Yun Ryu , Young Choi , Baik Cheong , Jae Lee
CPC分类号： F25B13/00 , F02G5/02 , F25B27/02 , F25B2313/023 , F25B2400/075 , Y02A30/274 , Y02B30/52 , Y02E20/14 , Y02P80/15 , Y02T10/166
摘要： A cogeneration system including an engine, which drives a generator to generate electricity, a cooling/heating unit, which comprises at least one compressor, a four-way valve, an outdoor heat exchanger, an expansion device, and an indoor heat exchanger, to establish a heat pump type refrigerant cycle, and an exhaust heat consuming heating unit to supply heat of exhaust gas discharged from the engine to a heat exchanging zone of the indoor heat exchanger of the cooling/heating unit, and thus, to heat a confined space. Since waste heat generated from the engine is directly used in the cooling/heating unit, an enhancement in indoor heating efficiency is achieved.
摘要翻译： 一种包括驱动发电机发电的发动机的热电联产系统，包括至少一个压缩机，四通阀，室外热交换器，膨胀装置和室内热交换器的冷却/加热单元， 建立热泵式制冷剂循环，以及排气热消耗加热单元，其将从发动机排出的排气的热量供给到制冷单元的室内热交换器的热交换区域，从而加热密闭空间 。 由于从发动机产生的废热直接用于冷却/加热装置，所以可以实现室内加热效率的提高。
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公开(公告)号：US20060023471A1
公开(公告)日：2006-02-02
申请号：US11171675
申请日：2005-06-30
IPC分类号： F21V7/04
CPC分类号： G02F1/133604 , G02F2001/133612
摘要： A backlight unit is disclosed, to remove an unnecessary portion from a PCB and to decrease the number of connectors and wires, which includes a plurality of light-emitting lamps arranged in one direction inside a lamp housing; first and second driving unit PCBs positioned at both sides on the rear surface of the lamp housing, to apply a power to the light-emitting lamps; first and second connection PCBs positioned at both sides of the lamp housing, wherein the respective first and second connection PCBs are separately provided from the first and second driving unit PCBs; and first and second power supplying wires for the respective connection between the first and second driving unit PCBs with the first and second connection unit PCBs.
摘要翻译： 公开了一种背光单元，用于从PCB中去除不需要的部分并减少连接器和电线的数量，其包括沿灯壳内的一个方向布置的多个发光灯; 第一和第二驱动单元PCB，其位于灯壳的后表面的两侧，以向发光灯施加电力; 位于灯壳两侧的第一和第二连接PCB，其中相应的第一和第二连接PCB与第一和第二驱动单元PCB分开设置; 以及用于第一和第二驱动单元PCB之间的相应连接的第一和第二供电线与第一和第二连接单元PCB。
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公开(公告)号：US20060019492A1
公开(公告)日：2006-01-26
申请号：US11179455
申请日：2005-07-11
申请人： Jae Lee
发明人： Jae Lee
IPC分类号： H01L21/461
CPC分类号： H01L21/76888 , H01L21/02071 , H01L21/31138 , H01L21/32136
摘要： The present invention relates to a method for preventing a metal corrosion in a semiconductor device. The present method includes the steps of etching of a metal layer in a chamber, the metal layer having a photoresist pattern thereon or thereover; oxidizing a surface of the metal layer using a plasma comprising N2O in the same chamber; and removing the photoresist. Therefore, metal corrosion as well as bridges between metal wirings can be suppressed or prevented, thereby improving the profile of metal layer and the reliability and yield of the semiconductor device.
摘要翻译： 本发明涉及一种在半导体器件中防止金属腐蚀的方法。 本方法包括以下步骤：在室中蚀刻金属层，金属层在其上具有光致抗蚀剂图案; 在同一个室中使用包含N 2 O 2的等离子体对金属层的表面进行氧化; 并去除光致抗蚀剂。 因此，可以抑制或防止金属腐蚀以及金属布线之间的桥接，从而改善金属层的轮廓以及半导体器件的可靠性和产量。
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公开(公告)号：US20060017168A1
公开(公告)日：2006-01-26
申请号：US11205376
申请日：2005-08-17
申请人： Jae Lee
发明人： Jae Lee
IPC分类号： H01L23/52
CPC分类号： H01L23/3192 , H01L2924/0002 , H01L2924/00
摘要： Semiconductor devices to reduce stress on a metal interconnect are disclosed. A disclosed semiconductor device comprises: a semiconductor substrate; an uppermost metal interconnect formed on the semiconductor substrate; an oxide layer formed on the substrate and the uppermost metal interconnect; an aluminum layer formed on the oxide layer; and a stress-relief layer formed on the aluminum layer to thereby prevent cracking of the passivation layer during a subsequent packaging process, to increase reliability of the passivation layer, and to prevent degradation of properties of the semiconductor device.
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99.发明申请Methods of forming shallow trench isolation structures in semiconductor devices 失效在半导体器件中形成浅沟槽隔离结构的方法公开(公告)号：US20060014362A1
公开(公告)日：2006-01-19
申请号：US11181607
申请日：2005-07-13
申请人： Jae Lee
发明人： Jae Lee
IPC分类号： H01L21/76
CPC分类号： H01L21/31053 , H01L21/76229
摘要： Methods of forming a shallow trench isolation structures in semiconductor devices are disclosed. A disclosed method comprises forming a first oxide layer, a nitride layer, and a second oxide layer on a substrate; forming a trench defining first and second active areas by etching the second oxide layer, the nitride layer, the first oxide layer, and the substrate in a predetermined area; forming a third oxide layer along an inside of the trench; forming a fourth oxide layer to fill up the trench; forming a sacrificial oxide layer on the fourth oxide layer; and removing the sacrificial oxide layer, the fourth oxide layer, the third oxide layer, the second oxide layer, and the nitride layer so as to form the shallow trench isolation. Thus, it is possible to minimize the damage of a narrow active area when forming an element isolation area through an STI process.
摘要翻译： 公开了在半导体器件中形成浅沟槽隔离结构的方法。 所公开的方法包括在基板上形成第一氧化物层，氮化物层和第二氧化物层; 通过在预定区域中蚀刻所述第二氧化物层，所述氮化物层，所述第一氧化物层和所述衬底来形成限定第一和第二有源区的沟槽; 沿着所述沟槽的内部形成第三氧化物层; 形成第四氧化物层以填充沟槽; 在所述第四氧化物层上形成牺牲氧化物层; 去除牺牲氧化物层，第四氧化物层，第三氧化物层，第二氧化物层和氮化物层，以形成浅沟槽隔离。 因此，通过STI工艺形成元件隔离区域时，可以最小化窄的有效面积的损伤。
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公开(公告)号：US20060000728A1
公开(公告)日：2006-01-05
申请号：US11041987
申请日：2005-01-26
申请人： Jae Lee
发明人： Jae Lee
IPC分类号： B65D83/10
CPC分类号： A46B17/04 , A45C11/008 , A45D33/00
摘要： Disclosed is a case for safekeeping of a makeup brush, and more particularly, a case for safekeeping of a makeup brush which is able safekeep in a single case various kinds of makeup brushes used for women's makeup, makes it convenient to check if it is present or lost, and enables to keep the case in a standing position stably during the use of a makeup brush.
摘要翻译： 公开了一种用于保护化妆刷的情况，更具体地，涉及用于保护化妆刷的情况，该化妆刷在单一情况下能够保护用于女性化妆的各种化妆刷，使得检查是否存在 或丢失，并且能够在使用化妆刷期间将外壳保持在稳定的位置。
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