公开(公告)号：US20070134834A1

公开(公告)日：2007-06-14

申请号：US11634106

申请日：2006-12-06

申请人： Jae Lee ,  Jung Lee ,  Hyun Cho ,  Dae Kim ,  Jae Ro

发明人： Jae Lee ,  Jung Lee ,  Hyun Cho ,  Dae Kim ,  Jae Ro

IPC分类号： H01L21/20

CPC分类号： H01L33/007 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/22

摘要： A method of manufacturing a vertical GaN-based LED includes forming a nitride-based buffer layer on a silicon substrate; sequentially forming a p-type GaN layer, an active layer, and an n-type GaN layer on the nitride-based buffer layer; forming an n-electrode on the n-type GaN layer; forming a plating seed layer on the n-electrode; forming a structure supporting layer on the plating seed layer; removing the silicon substrate through wet etching and forming roughness on the surface of the p-type GaN layer through over-etching; and forming a p-electrode on the p-type GaN layer having the roughness formed.

摘要翻译： 制造垂直GaN基LED的方法包括在硅衬底上形成氮化物基缓冲层; 在氮化物基缓冲层上依次形成p型GaN层，有源层和n型GaN层; 在n型GaN层上形成n电极; 在n电极上形成电镀种子层; 在电镀种子层上形成结构支撑层; 通过湿蚀刻去除硅衬底，并通过过蚀刻在p型GaN层的表面上形成粗糙度; 在形成有粗糙度的p型GaN层上形成p电极。

公开(公告)号：US20060215256A1

公开(公告)日：2006-09-28

申请号：US11443376

申请日：2006-05-31

申请人： Jae Lee ,  Jung Lee ,  Je Kim

发明人： Jae Lee ,  Jung Lee ,  Je Kim

IPC分类号： H01S3/00

CPC分类号： H01L33/007 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/12

摘要： A gallium nitride semiconductor LED includes a substrate for growing a GaN semiconductor material, an n-type GaN clad layer formed on the substrate and doped with Al, an active layer having a quantum well structure formed on the n-type GaN clad layer, and a p-type GaN clad layer formed on the active layer.

摘要翻译： 氮化镓半导体LED包括用于生长GaN半导体材料的衬底，在衬底上形成并掺杂有Al的n型GaN覆层，在n型GaN覆层上形成的具有量子阱结构的有源层，以及 形成在有源层上的p型GaN覆层。

公开(公告)号：US20060065929A1

公开(公告)日：2006-03-30

申请号：US11095073

申请日：2005-03-31

申请人： Jae Lee ,  Jung Lee

发明人： Jae Lee ,  Jung Lee

IPC分类号： H01L27/12

CPC分类号： H03H9/0542 ,  H01L27/0605 ,  H01L29/2003 ,  H01L29/7787 ,  H03H3/08

摘要： Provided is a nitride-based semiconductor device in which a SAW filter and a HFET are integrated on a single substrate, as well as a method for manufacturing the same. The nitride-based semiconductor device comprises a semi-insulating GaN layer formed on a substrate, a plurality of electrodes for a SAW filter formed on one side of the semi-insulating GaN layer, an Al-doped GaN layer formed on the other side of the semi-insulating GaN layer, an AlGaN layer formed on the Al-doped GaN layer, and a plurality of electrodes for an HFET formed on the AlGaN layer. Both sides of the semi-insulating GaN layer have the same surface level.

摘要翻译： 提供了一种其中SAW滤波器和HFET集成在单个基板上的氮化物基半导体器件及其制造方法。 氮化物类半导体器件包括形成在衬底上的半绝缘GaN层，形成在半绝缘GaN层的一侧上的用于SAW滤波器的多个电极，形成在半绝缘GaN层的另一侧上的Al掺杂GaN层 半绝缘GaN层，形成在Al掺杂GaN层上的AlGaN层和在AlGaN层上形成的多个用于HFET的电极。 半绝缘GaN层的两侧具有相同的表面水平。

公开(公告)号：US20060091500A1

公开(公告)日：2006-05-04

申请号：US11203132

申请日：2005-08-15

申请人： Jae Lee ,  Jung Lee ,  Hyun Cho

发明人： Jae Lee ,  Jung Lee ,  Hyun Cho

IPC分类号： H01L29/20

CPC分类号： C30B29/403 ,  C30B25/02 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02636

摘要： A process for preparing a nitride based semiconductor device in accordance with the present invention comprises growing a high temperature AlN single crystal layer on a substrate; growing a first GaN layer on the high temperature AlN single crystal layer in a first V/III ratio, under a first pressure of 300 Torr or more, such that the predominant direction of growth is the lateral direction; and growing a second GaN layer on the first GaN layer in a second V/III ratio lower than the first V/III ratio, under a second pressure lower than the first pressure such that the predominant direction of growth is the lateral direction.

摘要翻译： 根据本发明的制备氮化物基半导体器件的方法包括在衬底上生长高温AlN单晶层; 在300Torr以上的第一压力下以第一V / III比在高温AlN单晶层上生长第一GaN层，使得主要生长方向为横向; 以及在比所述第一压力低的第二压力下，以比所述第一V / III比低的第二V / III比在所述第一GaN层上生长第二GaN层，使得所述主要生长方向为横向。

公开(公告)号：US20060003556A1

公开(公告)日：2006-01-05

申请号：US10965263

申请日：2004-10-15

申请人： Jae Lee ,  Jung Lee

发明人： Jae Lee ,  Jung Lee

IPC分类号： H01L21/20

CPC分类号： H01L21/0262 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254

摘要： Disclosed herein is a method for growing a semi-insulating GaN layer with high sheet resistance by controlling the size of grains through changes in growth temperature at the initial growth stage of the layer, without doping of dopants. The method comprises the steps of growing a buffer layer on a substrate at a first growth temperature, growing a GaN layer on the buffer layer at a second growth temperature higher than the first growth temperature for a first growth time (a first growth step), growing the GaN layer at increasing temperatures from the second growth temperature to a third growth temperature higher than the second growth temperature for a second growth time (a second growth step), and growing the GaN layer at the third growth temperature for a third growth time (a third growth step).

摘要翻译： 本文公开了一种通过在层的初始生长阶段通过生长温度的变化控制晶粒尺寸而不掺杂掺杂剂来生长具有高薄层电阻的半绝缘GaN层的方法。 该方法包括以下步骤：在第一生长温度下在衬底上生长缓冲层，在高于第一生长温度的第二生长温度下在缓冲层上生长第一生长时间（第一生长步骤）的GaN层， 在第二生长时间（第二生长步骤）中将GaN层从第二生长温度升高至高于第二生长温度的第三生长温度（第二生长步骤），并将GaN层在第三生长温度下生长第三生长时间 （第三个增长步骤）。

公开(公告)号：US20050139818A1

公开(公告)日：2005-06-30

申请号：US10843594

申请日：2004-05-12

申请人： Jae Lee ,  Jung Lee ,  Je Kim

发明人： Jae Lee ,  Jung Lee ,  Je Kim

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/205 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/00

CPC分类号： H01L33/007 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/12

摘要： Disclosed herein are a gallium nitride semiconductor LED (light emitting device) and a method of manufacturing the same, which reduces defects, such as Ga vacancies and dislocations caused by lattice mismatching, with Al doping, so that electrical and an optical properties are enhanced. The gallium nitride semiconductor LED comprises a substrate for growing a GaN semiconductor material, an n-type GaN clad layer formed on the substrate and doped with Al, an active layer having a quantum well structure formed on the n-type GaN clad layer, and a p-type GaN clad layer formed on the active layer. By the above method, good quality crystal growth is ensured with a low cost and the GaN semiconductor LED of excellent electrical and optical properties is provided.

摘要翻译： 本文公开了一种氮化镓半导体LED（发光器件）及其制造方法，其通过Al掺杂减少诸如Ga空位和由晶格失配引起的位错的缺陷，从而提高了电学和光学性能。 氮化镓半导体LED包括用于生长GaN半导体材料的衬底，在衬底上形成并掺杂有Al的n型GaN覆层，在n型GaN覆层上形成有量子阱结构的有源层，以及 形成在有源层上的p型GaN覆层。 通过上述方法，以低成本确保了优质的晶体生长，并且提供了优异的电气和光学特性的GaN半导体LED。

公开(公告)号：US20060070395A1

公开(公告)日：2006-04-06

申请号：US11143458

申请日：2005-06-03

申请人： Jae Lee ,  Jae Lee ,  June Min

发明人： Jae Lee ,  Jae Lee ,  June Min

IPC分类号： F25D17/04 ,  F25D17/06

CPC分类号： F25D17/045 ,  F25D17/062 ,  F25D2317/0665 ,  F25D2317/067 ,  F25D2500/02

摘要： A refrigerator capable of adjusting a discharge position and a quantity of cold air discharged into the refrigerator. The refrigerator includes an inner panel installed at a rear surface of a storage chamber and having cold air outlets for forming a cooling channel. The refrigerator also includes a variable duct installed at one of the cold air outlets such that the variable duct can move back and forth to vary a length of the cooling channel, and a plurality of cold air distribution holes formed in the variable duct.

摘要翻译： 一种能够调节排出位置的冰箱以及排入冰箱的冷气的量。 冰箱包括安装在存储室的后表面的内板，并具有用于形成冷却通道的冷气出口。 冰箱还包括安装在一个冷气出口处的可变管道，使得可变管道可前后移动以改变冷却通道的长度，以及形成在可变管道中的多个冷气分配孔。

公开(公告)号：US20080036055A1

公开(公告)日：2008-02-14

申请号：US11365246

申请日：2006-03-01

申请人： Jae Yee ,  Young Chung ,  Jae Lee ,  Terry Davis ,  Chung Han ,  Jae Ku ,  Jae Kwak ,  Sang Ryu

发明人： Jae Yee ,  Young Chung ,  Jae Lee ,  Terry Davis ,  Chung Han ,  Jae Ku ,  Jae Kwak ,  Sang Ryu

IPC分类号： H01L23/495 ,  H01L21/98

CPC分类号： H01L23/3107 ,  H01L23/4951 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49551 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/05599 ,  H01L2224/29007 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0106 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： A lead frame for making a semiconductor package is disclosed. The leadframe's leads include a lead lock provided at a free end of each inner lead that is adapted to increase a bonding force of the inner lead to a resin encapsulate, thereby effectively preventing a separation of the inner lead from occurring in a singulation process involved in the fabrication of the semiconductor package. A semiconductor package fabricated using the lead frame and a fabrication method for the semiconductor package are also disclosed. The lead frame includes a paddle, a plurality of tie bars for supporting the corners of the paddle, a plurality of leads arranged at each of four sides or two facing sides of the paddle in such a fashion that they are spaced apart from an adjacent side of the paddle while extending perpendicularly to the associated side of the paddle, each of the leads having lead separation preventing means adapted to increase a bonding force of the lead to a resin encapsulate subsequently molded to encapsulate the lead frame for fabrication of the semiconductor package, and dam bars for supporting the leads and the tie bars. Additional package embodiments include exposed protrusions extending downward from the leads. The exposed protrusions are irradiated with a laser to remove set resin prior to a solder ball attachment step.

摘要翻译： 公开了一种用于制造半导体封装的引线框架。 引线框架的引线包括提供在每个内引线的自由端处的引线锁，其适于增加内引线与树脂封装件的结合力，从而有效地防止内引线的分离在所涉及的单个加工过程中发生 制造半导体封装。 还公开了使用引线框制造的半导体封装和用于半导体封装的制造方法。 引线框架包括桨，用于支撑桨的角的多个连杆，多个引线，其布置在桨的四个侧面或两个相对的侧面中，使得它们与相邻侧面间隔开 的叶片，同时垂直于桨叶的相关侧延伸，每个引线具有引线分离防止装置，其适于增加引线与随后模制的树脂封装件的结合力，以封装引线框架以制造半导体封装， 和用于支撑引线和连接条的阻挡条。 另外的封装实施例包括从引线向下延伸的暴露突起。 在焊球附着步骤之前，用激光照射暴露的突起以去除固化树脂。

公开(公告)号：US20080014462A1

公开(公告)日：2008-01-17

申请号：US11861595

申请日：2007-09-26

申请人： Myung KIM ,  Hyung Oh ,  Jae Kyung ,  Sung Kim ,  Jae Lee ,  Young Han ,  Chun Park ,  Jong Yoon ,  Sae Park

发明人： Myung KIM ,  Hyung Oh ,  Jae Kyung ,  Sung Kim ,  Jae Lee ,  Young Han ,  Chun Park ,  Jong Yoon ,  Sae Park

IPC分类号： B32B9/00

CPC分类号： H01L51/5088 ,  H01L51/0052 ,  H01L51/0059 ,  H01L2251/5346 ,  Y10S428/917

摘要： An organic EL device is disclosed, which has an organic multilayer between a first electrode and a second electrode, the organic multilayer comprising a hole injection layer formed on the first electrode, and formed of a mixture of at least one selected from organic materials and at least one selected from inorganic materials; a hole transport layer having at least one layer on the hole injection layer; and an emitting layer formed on the hole transport layer.

摘要翻译： 公开了一种有机EL器件，其在第一电极和第二电极之间具有有机多层，所述有机层包含在第一电极上形成的空穴注入层，并且由选自有机材料中的至少一种和 至少一种选自无机材料; 在空穴注入层上具有至少一层的空穴传输层; 以及形成在空穴传输层上的发光层。

公开(公告)号：US20080006048A1

公开(公告)日：2008-01-10

申请号：US11770526

申请日：2007-06-28

申请人： Jong YOON ,  Byeong Kang ,  Young Woo Kim ,  Sang Park ,  Jae Lee

发明人： Jong YOON ,  Byeong Kang ,  Young Woo Kim ,  Sang Park ,  Jae Lee

IPC分类号： F25C1/22

CPC分类号： F25D23/04 ,  F25C1/24 ,  F25C2305/022 ,  F25C2400/06 ,  F25C2400/12 ,  F25C2400/14 ,  F25C2500/06 ,  F25D2323/122

摘要： An ice tray assembly and a refrigerator having the same are disclosed. The ice tray assembly includes an outer case on which a water container is mounted, and an inner case detachably mounted in the outer case to include ice trays which are supplied with water from the water container. The ice tray assembly includes the inner case which is detachable therefrom, thereby facilitating washing. Further, the ice trays can be supplied with water at once without water leakage and ice cubes made in the ice trays can be separated from the ice trays at once.

摘要翻译： 公开了一种冰盘组件及其制造商。 冰盘组件包括安装有水容器的外壳和可拆卸地安装在外壳中的内壳，以包括从水容器供应水的冰盘。 冰盘组件包括可拆卸的内壳，从而便于洗涤。 此外，冰盘可以一次供水，没有漏水，冰盘中制成的冰块可以与冰盘一次分离。