摘要:
A half-duplex communication system may include one or more low-voltage differential signaling half-duplex transceivers. Each transceiver may include a plurality of input terminals receiving a plurality differential data signals, an input driver transferring the differential data signals from differential transmission lines through output terminals, and an output driver transferring the differential data signals from the input terminals through the differential transmission lines and out to one of the first and second transceivers via the non-inverse and inverse transmission lines. The differential data signals may be transferred in response to the differential data signals at the input terminals and at the output terminals of the input driver. Each transceiver may include a pre-driver configured to shift a reference voltage level of differential data signals input thereto from the input terminals and which are to be supplied to the output driver therefrom.
摘要:
A fabricating method of a flat panel display device according to the present invention includes providing a thin film on a substrate; providing a soft mold having a groove and a projection on the thin film; contacting the projection of the soft mold and the thin film; and spreading a hydrophilic polymer resin on the thin film to pattern the thin film.
摘要:
A soft mold includes a polymer layer having a printing pattern on at least a first surface thereof; and a back-plane attached to a second surface of the polymer layer.
摘要:
A method for fabricating a soft mold is disclosed, in which process matching is high regardless of a size of a master mold for forming the soft mold. The method for fabricating a soft mold includes arranging a master mold on a jig, forming a pre-polymer layer in the jig, attaching a back-plane substrate onto the pre-polymer layer, selectively curing the pre-polymer layer to selectively form a polymer layer, stripping the polymer layer and the pre-polymer layer from the jig and the master mold, and removing the pre-polymer layer that is not cured.
摘要:
Disclosed are a CMOS image sensor and manufacturing method thereof. The method includes the steps of forming a lower insulating layer and an upper insulating layer on an entire surface of a semiconductor substrate in successive order, the substrate having an isolation layer defining an active region comprising a photodiode region and a transistor region, the transistor region having a gate thereon, the gate comprising a gate insulating layer and a gate electrode, and having insulating sidewalls on sides thereof; removing the upper and lower insulating layers from region(s) other than the photodiode region; forming a metal layer on the surface of the semiconductor substrate; and annealing the substrate to selectively form a salicide layer on a surface of the semiconductor substrate (other than the photodiode region).
摘要:
Disclosed is a cylindrical lithium secondary battery capable of improving the stability thereof against the external pressure, The cylindrical lithium secondary battery includes an electrode assembly and a core. The electrode assembly includes a first electrode sheet, a second electrode sheet and a separator interposed between the first and second electrode sheets, which are rolled together about an axis. The electrode assembly defines a space. The core has a tubular shape provided with a gap. The core includes at least one reinforcing structure extending in a direction extending along the axis. The core is inserted into the space of the electrode assembly. A housing receives the electrode assembly and core.
摘要:
Disclosed herein is an outer core assembly structure of a linear motor. At least one of a plurality of core sheets is an extended core sheet having a length greater than that of the other core sheets. Consequently, easy and convenient alignment of first and second outer core blocks is accomplished when the first and second outer core blocks are assembled, and the first and second outer core blocks are securely fixed to each other. Furthermore, an additional reinforcing cover is not necessary. Consequently, assembly of the first and second outer core blocks is easily and conveniently accomplished, and therefore, the assembly costs are reduced.
摘要:
The present invention relates to method and apparatus for interfacing for controlling a device between various applications operated on a home network and a library to ensure their compatibility. In a method for controlling a device on a home network according to the present invention, an application calls a function of a library for controlling a device on a network while providing an identifier of a device to control and a command code for control through a mutually-shared structure, and the library requests a command identified by the command code to a device specified by the identifier and delivers resultant information from the device to the application through the shared structure.
摘要:
The present invention relates to 1-/2-substituted-1H/-2H-[1,2,3]triazolo[4,5-g]phthalazine-4,9-dione compounds and their pharmaceutically acceptable salts, a process for preparing the compounds and a pharmaceutical composition comprising the compounds. The compounds are shown to effectively inhibit cell proliferation and are thus expected to be used for treatment or prevention or treatment of various cancers or as an ancillary(auxiliary) means of the same.
摘要:
The present invention provides a method for forming a multi-wavelength semiconductor laser device. The method comprises sequentially forming an AlGaAs-based epitaxial layer for a first semiconductor laser diode and an etching stop layer composed of AlxGayIn(1-x-y)P (0≦x≦1, 0≦y≦1) on a substrate and sequentially growing an n-type GaAs flattening buffer layer and an AlGaInP-based epitaxial layer for a second semiconductor laser diode on the substrate, after selectively removing the AlGaAs-based epitaxial layer and the etching stop layer.
摘要翻译:本发明提供一种形成多波长半导体激光器件的方法。 该方法包括顺序形成用于第一半导体激光二极管的AlGaAs基外延层和由AlxGayIn(1-xy)P(0≤x≤1,0<= y <= 1)组成的蚀刻停止层) 在选择性地除去基于AlGaAs的外延层和蚀刻停止层之后,在衬底上顺序生长n型GaAs平坦化缓冲层和用于第二半导体激光二极管的AlGaInP基外延层。