NANOIMPRINT LITHOGRAPHY
    3.
    发明申请

    公开(公告)号:US20180257269A1

    公开(公告)日:2018-09-13

    申请号:US15974457

    申请日:2018-05-08

    申请人: ELWHA, LLC

    IPC分类号: B29C33/42 B29C59/02 G03F7/00

    摘要: A mold may include a plurality of nanostructures configured to form a lithographic pattern when imprinted into a material. Imprinting may include imprinting the mold a first predetermined distance, modifying a temperature of the material, and altering a position of the mold based on the temperature modification. One or more thermal elements may alter a temperature of a first section of the material and/or one or more nanostructures for a predetermined pulse time less than an equilibrium time required for the mold and/or material to reach a stable temperature state. A first thermal element may selectively alter the temperature of a first section of the material and/or a first nanostructure and a second thermal element may selectively alter the temperature of a second section of the material and/or a second nanostructure. The one or more thermal elements may include one or more thermoelectric elements.