公开(公告)号：US20150357562A1

公开(公告)日：2015-12-10

申请号：US14297689

申请日：2014-06-06

Applicant: Macronix International Co., Ltd.

Inventor： Yu-Yu Lin ,  Feng-Min Lee ,  Ming-Hsiu Lee

IPC: H01L45/00

CPC classification number: H01L45/1233 ,  G11C13/0007 ,  H01L45/04 ,  H01L45/08 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1633

Abstract: A semiconductor structure, a resistive random access memory unit structure, and a manufacturing method of the semiconductor structure are provided. The semiconductor structure includes an insulating structure, a stop layer, a metal oxide layer, a resistance structure, and an electrode material layer. The insulating structure has a via, and the stop layer is formed in the via. The metal oxide layer is formed on the stop layer. The resistance structure is formed at a bottom of an outer wall of the metal oxide layer. The electrode material layer is formed on the metal oxide layer.

Abstract translation: 提供半导体结构，电阻随机存取存储器单元结构以及半导体结构的制造方法。 半导体结构包括绝缘结构，停止层，金属氧化物层，电阻结构和电极材料层。 绝缘结构具有通孔，并且阻挡层形成在通路中。 在停止层上形成金属氧化物层。 电阻结构形成在金属氧化物层的外壁的底部。 在金属氧化物层上形成电极材料层。

公开(公告)号：US20150138871A1

公开(公告)日：2015-05-21

申请号：US14085839

申请日：2013-11-21

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Ming-Hsiu Lee ,  Feng-Min Lee ,  Yu-Yu Lin

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/0002 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/003 ,  G11C13/0097 ,  G11C2013/0073 ,  G11C2013/0078 ,  G11C2213/79

Abstract: Provided is an operation method applicable to a resistive memory cell including a transistor and a resistive memory element. The operation method includes: in a programming operation, generating a programming current flowing through the transistor and the resistive memory element so that a resistance state of the resistive memory element changes from a first resistance state into a second resistance state; and in an erase operation, generating an erase current from a well region of the transistor to the resistive memory element but keeping the erase current from flowing through the transistor, so that the resistance state of the resistive memory element changes from the second resistance state into the first resistance state.

Abstract translation: 提供了一种适用于包括晶体管和电阻性存储元件的电阻式存储单元的操作方法。 操作方法包括：在编程操作中，产生流过晶体管和电阻存储元件的编程电流，使得电阻性存储元件的电阻状态从第一电阻状态变为第二电阻状态; 并且在擦除操作中，产生从晶体管的阱区到电阻存储元件的擦除电流，但是保持擦除电流不流过晶体管，使得电阻性存储元件的电阻状态从第二电阻状态变为 第一个阻力状态。