公开(公告)号：US20110055297A1

公开(公告)日：2011-03-03

申请号：US12921829

申请日：2010-03-04

申请人： Takuji Maeda ,  Masayuki Toyama ,  Manabu Inoue ,  Toshiyuki Honda

发明人： Takuji Maeda ,  Masayuki Toyama ,  Manabu Inoue ,  Toshiyuki Honda

IPC分类号： G06F17/30

CPC分类号： G06F3/0643 ,  G06F3/0613 ,  G06F3/0679

摘要： A method for increasing the speed of processing when writing multiple files in parallel and writing file data in a stable manner in the case where the regions of a non-volatile memory in an information recording module are managed according to a filesystem is provided. An access module (1) includes a unit (104) that communicates, to an information recording module (2), information regarding the storage location of a directory entry, and also includes a unit (105) that pads file data when writing fractional data such as the end of a file and writes that data into the information recording module (2). Upon determining that the directory entry is to be written based on the communicated information, the information recording module (2) stores the directory entry in a dedicated physical block. Furthermore, the access module (1) pads the data of multiple files as necessary and records those files in continuous addresses in units that are a multiple of a predetermined size of a unit of recording processing.

摘要翻译： 提供了在根据文件系统管理信息记录模块中的非易失性存储器的区域的情况下，并行地写入多个文件并且以稳定的方式写入文件数据时提高处理速度的方法。 访问模块（1）包括向信息记录模块（2）传送关于目录条目的存储位置的信息的单元（104），并且还包括在写入小数据数据时衬垫文件数据的单元（105） 例如文件的结尾并将该数据写入信息记录模块（2）。 在基于所传送的信息确定要写入目录条目时，信息记录模块（2）将目录条目存储在专用物理块中。 此外，访问模块（1）根据需要填充多个文件的数据，并以这些记录处理单位的预定大小的倍数的单位将这些文件记录在连续地址中。

公开(公告)号：US20100293728A1

公开(公告)日：2010-11-25

申请号：US12739981

申请日：2008-07-14

申请人： Mitsuhiro Yamane ,  Manabu Inoue ,  Nayomon Uno

发明人： Mitsuhiro Yamane ,  Manabu Inoue ,  Nayomon Uno

IPC分类号： E01D19/16 ,  E01D11/00 ,  E03B5/00

CPC分类号： E01D19/16 ,  Y10T137/0402 ,  Y10T137/86035

摘要： A suspension bridge is supported by a cable with one or more cable bands. The rust-preventing device comprises one or more covers for so covering the cable that the gaps allowing a gas to longitudinally flow along the outer surface of the cable are formed between the inner peripheral surfaces of the covers and the outer surface of the cable, and an air blower which is in airtight communication with the gaps and supplies air into the gaps after drying it.

摘要翻译： 悬挂桥由带有一个或多个电缆带的电缆支撑。 防锈装置包括一个或多个用于覆盖电缆的盖，使得气体沿着电缆的外表面纵向流动的间隙形成在电缆的内周表面和电缆的外表面之间，并且 与间隙气密连通的送风机，干燥后将空气供给到间隙中。

公开(公告)号：US20100230009A1

公开(公告)日：2010-09-16

申请号：US12784570

申请日：2010-05-21

申请人： Katsuhide OSHIMA ,  Shigemi Tanaka ,  Manabu Inoue ,  Tomitaka Yamamoto

发明人： Katsuhide OSHIMA ,  Shigemi Tanaka ,  Manabu Inoue ,  Tomitaka Yamamoto

IPC分类号： C23C22/27 ,  C23C22/00

CPC分类号： C23C22/46 ,  C23C22/47 ,  C23C2222/10 ,  Y10T428/12583 ,  Y10T428/12792 ,  Y10T428/12799

摘要： A processing solution for forming a hexavalent chromium free, corrosion resistant trivalent chromate conversion film on zinc or zinc alloy plating layers comprises: trivalent chromium and oxalic acid in a molar ratio ranging from 0.5/1 to 1.5/1, wherein the trivalent chromium is present in the form of water-soluble complex with oxalic acid; and cobalt ions, which do not form a hardly soluble metal salt with oxalic acid and are stably present in the processing solution without causing any precipitation; wherein the solution reacts with zinc when bringing it into contact with the zinc or zinc alloy plating to form a hexavalent chromium free, corrosion resistant, trivalent chromate conversion film containing zinc, chromium, cobalt, oxalic acid and silicon on the plating. The film is quite thin, free of any hexavalent chromium, has corrosion resistance identical to or higher than that achieved by the conventional hexavalent chromium-containing film and can be formed using a processing solution having a quite low concentration.

摘要翻译： 一种用于在锌或锌合金镀层上形成六价铬无铬耐腐蚀三价铬酸盐转化膜的处理溶液包括：摩尔比为0.5 / 1至1.5 / 1的三价铬和草酸，其中存在三价铬 以草酸的水溶性复合物的形式; 和钴离子，其不与草酸形成难溶的金属盐，并且稳定地存在于处理溶液中而不引起任何沉淀; 其中当与锌或锌合金镀层接触时，溶液与锌反应，以在镀层上形成含有锌，铬，钴，草酸和硅的六价铬，耐腐蚀的三价铬酸盐转化膜。 该膜相当薄，没有任何六价铬，具有与常规六价铬含量膜相同或更高的耐腐蚀性，并且可以使用浓度非常低的处理溶液形成。

公开(公告)号：US20090116234A1

公开(公告)日：2009-05-07

申请号：US12094853

申请日：2006-11-24

申请人： Manabu Inoue ,  Masakazu Yamamoto

发明人： Manabu Inoue ,  Masakazu Yamamoto

IPC分类号： F21V33/00

CPC分类号： G04G15/003 ,  G04G11/00 ,  H05B37/0218 ,  H05B37/0281 ,  Y02B20/42 ,  Y02B20/46 ,  Y10S5/905

摘要： In a wake-up apparatus for waking up a sleeper by light stimulus, it wakes the sleeper comfortably without feeling glare. A lighting device has a first lighting unit at a position that a light emitting face cannot be observed directly by the sleeper, and a second lighting unit at a position that a light emitting face can be observed directly by the sleeper. A control device activates the lighting device a predetermined time before a preset wake-up time so as to vary illuminance of light emitted from the lighting device in an order of low illuminance, middle illuminance and high illuminance, to light only the first lighting unit in a low illuminance condition and a middle illuminance condition, and to light both of the first lighting unit and the second lighting unit in a high illuminance condition, and quickly varies from the middle illuminance condition to the high illuminance condition.

摘要翻译： 在用光刺激唤醒睡眠者的唤醒装置中，它可以舒适地唤醒睡眠者，而不会眩光。 照明装置具有在由睡眠者不能直接观察到发光面的位置处的第一照明单元，以及可以通过卧铺台直接观察发光面的位置处的第二照明单元。 控制装置在预设的唤醒时间之前的预定时间激活照明装置，以便以低照度，中等照度和高照度的顺序改变从照明装置发射的光的照度，仅将第一照明装置 低照度条件和中等照度条件，并且在高照度条件下点亮第一照明单元和第二照明单元，并且从中间照度条件到高照度条件快速变化。

公开(公告)号：US20090019194A1

公开(公告)日：2009-01-15

申请号：US11909749

申请日：2006-03-24

申请人： Masayuki Toyama ,  Masahiro Nakanishi ,  Tomoaki Izumi ,  Tetsushi Kasahara ,  Kazuaki Tamura ,  Kiminori Matsuno ,  Manabu Inoue

发明人： Masayuki Toyama ,  Masahiro Nakanishi ,  Tomoaki Izumi ,  Tetsushi Kasahara ,  Kazuaki Tamura ,  Kiminori Matsuno ,  Manabu Inoue

IPC分类号： G06F3/00

CPC分类号： G06F3/0659 ,  G06F3/061 ,  G06F3/0656 ,  G06F3/0658 ,  G06F3/0676 ,  G06F11/1441

摘要： When a control unit (160) in a storage device (100) detects that a write end command or a data amount to be written has been transmitted from a host device (110), the control unit (160) saves control information required for writing data in a control information save memory (142). The control unit (160) also saves data which has not been written in storage medium into a buffer save memory (152) from a data buffer (151) and releases the busy state for the host device (110). The control unit (160) writes the saved data into a storage medium (120). Even if the power is turned OFF before completion of write, write can be performed into the storage medium (120) by using the saved data when the power is turned ON next time.

摘要翻译： 当存储装置（100）中的控制单元（160）检测到从主机（110）发送写入结束命令或写入数据量时，控制单元（160）保存写入所需的控制信息 控制信息中的数据保存存储器（142）。 控制单元（160）还将从存储介质中未被写入的数据从数据缓冲器（151）保存到缓冲存储器（152）中，并且释放主机设备（110）的忙状态。 控制单元（160）将保存的数据写入存储介质（120）。 即使在完成写入之前电源被关闭，当下一次接通电源时，也可以通过使用保存的数据来对存储介质（120）进行写入。

公开(公告)号：US07471264B2

公开(公告)日：2008-12-30

申请号：US11098731

申请日：2005-04-04

申请人： Manabu Inoue ,  Satoshi Ikeda ,  Yasuhiro Arai ,  Toshikazu Nagaki ,  Hideki Nakata ,  Jumpei Hashiguchi ,  Fumito Kusama

发明人： Manabu Inoue ,  Satoshi Ikeda ,  Yasuhiro Arai ,  Toshikazu Nagaki ,  Hideki Nakata ,  Jumpei Hashiguchi ,  Fumito Kusama

IPC分类号： G09G3/28

CPC分类号： G09G3/2927 ,  G09G3/293 ,  G09G3/294 ,  G09G3/2965 ,  G09G3/298 ,  G09G2310/066

摘要： A reset pulse generating section applies the total of voltages of a positive voltage source and two constant-voltage sources from a high side ramp wave generating section to a high side scan switching device as the upper limit of a reset voltage pulse, and applies the ground potential from a low side ramp wave generating section to a low side scan switching device as the lower limit of the reset voltage pulse. A sustaining pulse generating section applies the upper and lower limits of a sustaining voltage pulse through a common sustaining pulse transmission path to the low side scan switching device.

摘要翻译： 复位脉冲发生部将来自高侧斜波生成部的正电压源和两个恒定电压源的电压的总和作为复位电压脉冲的上限施加到高侧扫描开关器件，并施加接地 作为复位电压脉冲的下限，从低侧斜波生成部向低侧扫描切换装置的电位。 维持脉冲发生部通过公共维持脉冲传输路径将维持电压脉冲的上限和下限施加到低侧扫描切换装置。

公开(公告)号：US20070188415A1

公开(公告)日：2007-08-16

申请号：US11354995

申请日：2006-02-16

申请人： Manabu Inoue

发明人： Manabu Inoue

IPC分类号： G09G3/28

CPC分类号： G09G3/2965 ,  G09G3/296 ,  G09G2330/027 ,  G09G2330/04

摘要： A PDP driving apparatus drives a plasma display panel (PDP) having sustain electrodes, scan electrodes, and address electrodes. The PDP driving apparatus has a plurality of switch elements. At least one of the plurality of switch elements is a normally-on switch element which turns on while a driving voltage is not applied to itself.

摘要翻译： PDP驱动装置驱动具有维持电极，扫描电极和寻址电极的等离子体显示面板（PDP）。 PDP驱动装置具有多个开关元件。 多个开关元件中的至少一个是常开触发开关元件，其在不向自身施加驱动电压的同时导通。

公开(公告)号：US20070183179A1

公开(公告)日：2007-08-09

申请号：US10567241

申请日：2004-08-03

申请人： Takuji Maeda ,  Shinji Inoue ,  Yoshiho Gotoh ,  Jun Ohara ,  Masahiro Nakanishi ,  Shoichi Tsujita ,  Tomoaki Izumi ,  Tetsushi Kasahara ,  Kazuaki Tamura ,  Kiminori Matsuno ,  Koichi Horiuchi ,  Manabu Inoue ,  Makoto Ochi

发明人： Takuji Maeda ,  Shinji Inoue ,  Yoshiho Gotoh ,  Jun Ohara ,  Masahiro Nakanishi ,  Shoichi Tsujita ,  Tomoaki Izumi ,  Tetsushi Kasahara ,  Kazuaki Tamura ,  Kiminori Matsuno ,  Koichi Horiuchi ,  Manabu Inoue ,  Makoto Ochi

IPC分类号： G11C5/00

CPC分类号： G06F3/0659 ,  G06F3/061 ,  G06F3/0632 ,  G06F3/0679

摘要： A card information-storing portion is provided in a semiconductor memory card, and information relating to access performance such as access condition and access rate is held in the storing portion. Further, an access device acquires the held information from the semiconductor memory card to make it possible that the information can be used for control of a file system. This optimizes processing of the access device and the semiconductor memory card independent of differences in characteristics of semiconductor memory cards and management methods used, realizing high-rate access from the access device to a semiconductor memory card.

摘要翻译： 在半导体存储卡中设置有卡片信息存储部分，并且存储与存取条件和访问速率有关的访问性能的信息被保存在存储部分中。 此外，访问装置从半导体存储卡获取保持的信息，使得该信息可以用于文件系统的控制。 这优化了访问设备和半导体存储卡的处理，而与半导体存储卡的特性差异以及使用的管理方法无关，实现了从访问设备到半导体存储卡的高速率访问。

公开(公告)号：US20050109426A1

公开(公告)日：2005-05-26

申请号：US10939555

申请日：2004-09-14

申请人： Manabu Inoue ,  Ryo Nakajima ,  Kazuhiro Watanabe ,  Toyoji Watanabe ,  Fumie Watanabe ,  Yutaka Watanabe ,  Takeshi Watanabe ,  Kimitaka Watanabe

发明人： Manabu Inoue ,  Ryo Nakajima ,  Kazuhiro Watanabe ,  Toyoji Watanabe ,  Fumie Watanabe ,  Yutaka Watanabe ,  Takeshi Watanabe ,  Kimitaka Watanabe

IPC分类号： C23C22/17 ,  C23C22/47 ,  C23C22/53

CPC分类号： C23C22/17 ,  C23C22/47 ,  C23C22/53 ,  C23C2222/10

摘要： It is an object of the present invention to provide a processing solution used for forming a hexavalent chromium free, black conversion film, which is applied onto the surface of zinc or zinc alloy plating layers, and which has corrosion resistance identical to or higher than that achieved by the conventional hexavalent chromium-containing conversion film. According to an aspect of the present invention, there is provided a processing solution for forming a hexavalent chromium free, black conversion film on zinc or zinc alloy plating layers, the processing solution comprising: nitrate ions and trivalent chromium in a mole ratio (NO3−/Cr3+) of less than 0.5/1, wherein the trivalent chromium is present in the form of a water-soluble complex with a chelating agent; and cobalt ions and/or nickel ions, wherein the cobalt ions and/or nickel ions are stably present in the processing solution without causing any precipitation by forming a hardly soluble metal salt with the chelating agent; wherein the solution reacts with zinc when it is brought into contact with the zinc or zinc alloy plating to form a hexavalent chromium free, black conversion film containing zinc, chromium, cobalt and/or nickel, and the chelating agent on the plating.

摘要翻译： 本发明的目的是提供一种用于形成六价铬无黑变换膜的处理溶液，其被施加到锌或锌合金镀层的表面上，并且具有与之相同或更高的耐蚀性 通过常规的六价含铬转化膜实现。 根据本发明的一个方面，提供一种用于在锌或锌合金镀层上形成六价铬的黑色转换膜的处理溶液，所述处理溶液包括：摩尔比（NO < 其中三价铬以与螯合剂的水溶性络合物的形式存在;其中三价铬以水溶性络合物的形式存在于螯合剂中; 和钴离子和/或镍离子，其中钴离子和/或镍离子稳定地存在于处理溶液中，而不会通过与螯合剂形成难溶的金属盐而引起任何沉淀; 其中当与锌或锌合金镀层接触时，溶液与锌反应，以形成含有锌，铬，钴和/或镍的六价铬无黑色转化膜和电镀上的螯合剂。

公开(公告)号：US20050103403A1

公开(公告)日：2005-05-19

申请号：US11019277

申请日：2004-12-23

申请人： Katsuhide Oshima ,  Shigemi Tanaka ,  Manabu Inoue ,  Tomitaka Yamamoto

发明人： Katsuhide Oshima ,  Shigemi Tanaka ,  Manabu Inoue ,  Tomitaka Yamamoto

IPC分类号： B05D7/14 ,  C23C22/30 ,  C23C22/46 ,  C23C22/47

CPC分类号： C23C22/46 ,  C23C22/47 ,  C23C2222/10 ,  Y10T428/12583 ,  Y10T428/12792 ,  Y10T428/12799

摘要： A processing solution for forming a hexavalent chromium free, corrosion resistant trivalent chromate conversion film on zinc or zinc alloy plating layers comprises: trivalent chromium and oxalic acid in a molar ratio ranging from 0.5/1 to 1.5/1, wherein the trivalent chromium is present in the form of a water-soluble complex with oxalic acid; and cobalt ions, which do not form a hardly soluble metal salt with oxalic acid and are stably present in the processing solution without causing any precipitation; wherein the solution reacts with zinc when bringing it into contact with the zinc or zinc alloy plating to form a hexavalent chromium free, corrosion resistant, trivalent chromate conversion film containing zinc, chromium, cobalt, oxalic acid and silicon on the plating. The film is quite thin, free of any hexavalent chromium, has corrosion resistance identical to or higher than that achieved by the conventional hexavalent chromium-containing film and can be formed using a processing solution having a quite low concentration.

摘要翻译： 一种用于在锌或锌合金镀层上形成六价铬无铬耐腐蚀三价铬酸盐转化膜的处理溶液包括：摩尔比为0.5 / 1至1.5 / 1的三价铬和草酸，其中存在三价铬 呈草酸形式的水溶性复合物; 和钴离子，其不与草酸形成难溶的金属盐，并且稳定地存在于处理溶液中而不引起任何沉淀; 其中当与锌或锌合金镀层接触时，溶液与锌反应，以在镀层上形成含有锌，铬，钴，草酸和硅的六价铬，耐腐蚀的三价铬酸盐转化膜。 该膜相当薄，没有任何六价铬，具有与常规六价铬含量膜相同或更高的耐腐蚀性，并且可以使用浓度非常低的处理溶液形成。