利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

164 条记录 (耗时 0.043 秒)

    Magnetic memory device having yoke layer, and manufacturing method
    91.
    发明授权
    Magnetic memory device having yoke layer, and manufacturing method 有权
    具有轭层的磁记忆体装置及其制造方法

    公开(公告)号：US06797536B2

    公开(公告)日：2004-09-28

    申请号：US10767997

    申请日：2004-02-02

    申请人： Hiroaki Yoda ,  Yoshiaki Asao ,  Tomomasa Ueda ,  Minoru Amano ,  Tatsuya Kishi ,  Keiji Hosotani ,  Junichi Miyamoto

    发明人： Hiroaki Yoda ,  Yoshiaki Asao ,  Tomomasa Ueda ,  Minoru Amano ,  Tatsuya Kishi ,  Keiji Hosotani ,  Junichi Miyamoto

    IPC分类号： H01L2100

    CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08

    摘要： A magnetic memory device includes first wiring which runs in the first direction, second wiring which runs in the second direction, a magneto-resistance element which is arranged at an intersection between the first and second wirings, a first yoke main body which covers at least either of the lower surface and two side surfaces of the first wring, a second yoke main body which covers at least either of the upper surface and two side surfaces of the second wiring, first and second yoke tips which are arranged on two sides of the magneto-resistance element in the first direction at an interval from the magneto-resistance element, and third and fourth yoke tips which are arranged on two sides of the magneto-resistance element in the second direction at an interval from the magneto-resistance element.

    摘要翻译： 磁存储装置包括沿第一方向延伸的第一布线，沿第二方向延伸的第二布线，布置在第一布线和第二布线之间的交叉点处的磁阻元件，至少覆盖第一布线 第一绕线的下表面和两个侧表面中的任一个，覆盖第二布线的上表面和两个侧表面中的至少一个的第二轭主体，布置在第二布线的两侧上的第一和第二轭尖 磁阻元件以与磁阻元件间隔的方式在第一方向上，以及第三和第四磁轭尖端，其在与磁阻元件间隔开的第二方向上布置在磁阻元件的两侧。

    Magnetic random access memory
    92.
    发明授权
    Magnetic random access memory 失效
    磁性随机存取存储器

    公开(公告)号：US07333359B2

    公开(公告)日：2008-02-19

    申请号：US10419873

    申请日：2003-04-22

    申请人： Yoshiaki Asao ,  Yoshihisa Iwata ,  Yoshiaki Saito ,  Hiroaki Yoda ,  Tomomasa Ueda ,  Minoru Amano ,  Shigeki Takahashi ,  Tatsuya Kishi

    发明人： Yoshiaki Asao ,  Yoshihisa Iwata ,  Yoshiaki Saito ,  Hiroaki Yoda ,  Tomomasa Ueda ,  Minoru Amano ,  Shigeki Takahashi ,  Tatsuya Kishi

    IPC分类号： G11C11/00

    CPC分类号： B82Y25/00 ,  G11C11/16 ,  H01F10/06 ,  H01F10/3254

    摘要： A write word line is disposed right under a MTJ element. The write word line extends in an X direction, and side and lower surfaces of the write word line are coated with a hard magnetic material and yoke material. The hard magnetic material is magnetized by a surplus current passed through the write word line, and a characteristic of the MTJ element is corrected by residual magnetization. A data selection line (read/write bit line) is disposed right on the MTJ element. The data selection line extends in a Y direction intersecting with the X direction, and a part of the surface of the data selection line is coated with the yoke material.

    摘要翻译： 写字线被放置在MTJ元素的正下方。 写字线在X方向上延伸，并且写字线的侧表面和下表面涂覆有硬磁材料和轭材料。 硬磁材料被通过写入字线的剩余电流磁化，并且通过剩余磁化来校正MTJ元件的特性。 数据选择线（读/写位线）设置在MTJ元件上。 数据选择线在与X方向相交的Y方向上延伸，并且数据选择线的表面的一部分涂覆有轭材料。

    Method for producing magnetic memory device
    93.
    发明申请
    Method for producing magnetic memory device 有权

    公开(公告)号：US20060163196A1

    公开(公告)日：2006-07-27

    申请号：US11389281

    申请日：2006-03-27

    申请人： Minoru Amano ,  Tatsuya Kishi ,  Yoshiaki Saito ,  Tomomasa Ueda ,  Hiroaki Yoda

    发明人： Minoru Amano ,  Tatsuya Kishi ,  Yoshiaki Saito ,  Tomomasa Ueda ,  Hiroaki Yoda

    IPC分类号： B44C1/22 ,  G11B5/127 ,  C23F1/00 ,  H04R31/00

    CPC分类号： G11C11/15 ,  Y10T29/49021

    摘要： There is provided a magnetic memory device which has a small switching current for a writing line and which has a small variation therein. A method for producing such a magnetic memory device includes: forming a magnetoresistive effect element; forming a first insulating film so as to cover the magnetoresistive effect element; forming a coating film so as to cover the first insulating film; exposing a top face of the magnetoresistive effect element; forming an upper writing line on the magnetoresistive effect element; exposing the first insulating film on a side portion of the magnetoresistive effect element by removing a part or all of the coating film; and forming a yoke structural member so as to cover at least a side portion of the upper writing line and so as to contact the exposed first insulating film on the side portion of the magnetoresistive effect element.

    Magnetic memory
    96.
    发明授权
    Magnetic memory 有权
    磁记忆

    公开(公告)号：US06831855B2

    公开(公告)日：2004-12-14

    申请号：US10345188

    申请日：2003-01-16

    申请人： Tatsuya Kishi ,  Minoru Amano ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Hiroaki Yoda ,  Tomomasa Ueda ,  Yoshihisa Iwata

    发明人： Tatsuya Kishi ,  Minoru Amano ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Hiroaki Yoda ,  Tomomasa Ueda ,  Yoshihisa Iwata

    IPC分类号： G11C1100

    CPC分类号： G11C11/16

    摘要： A magnetic memory includes: a magnetoresistance effect element having a magnetic recording layer; a first writing wiring extending in a first direction on or below the magnetoresistance effect element, a center of gravity of an axial cross section of the wiring being apart from a center of thickness at the center of gravity, and the center of gravity being eccentric toward the magnetoresistance effect element; and a writing circuit configured to pass a current through the first writing wiring in order to record an information in the magnetic recording layer by a magnetic field generated by the current.

    摘要翻译： 磁存储器包括：具有磁记录层的磁阻效应元件; 在磁阻效应元件上或其下方沿第一方向延伸的第一写入布线，布线的轴向横截面的重心与重心处的厚度中心分开，并且重心偏向 磁阻效应元件; 以及写入电路，其被配置为使电流通过所述第一写入布线，以便通过所述电流产生的磁场将信息记录在所述磁记录层中。

    Magnetic memory
    97.
    发明授权
    Magnetic memory 有权
    磁记忆

    公开(公告)号：US06807094B2

    公开(公告)日：2004-10-19

    申请号：US10769757

    申请日：2004-02-03

    申请人： Yoshiaki Saito ,  Katsuya Nishiyama ,  Shigeki Takahashi ,  Minoru Amano ,  Tomomasa Ueda ,  Hiroaki Yoda ,  Yoshiaki Asao ,  Yoshihisa Iwata ,  Tatsuya Kishi

    发明人： Yoshiaki Saito ,  Katsuya Nishiyama ,  Shigeki Takahashi ,  Minoru Amano ,  Tomomasa Ueda ,  Hiroaki Yoda ,  Yoshiaki Asao ,  Yoshihisa Iwata ,  Tatsuya Kishi

    IPC分类号： G11C1115

    CPC分类号： G11C11/16

    摘要： A magnetic memory includes a magnetoresistance effect element having a magnetic recording layer, a first wiring extending in a first direction on or below the magnetoresistance effect element, a covering layer provided on at least both sides of the first wiring, and a writing circuit configured to pass a current through the first wiring in order to record information in the magnetic recording layer by a magnetic field generated by the current. The covering layer is made of magnetic material and has a uniaxial anisotropy in the first direction, along which a magnetization of the covering layer occurs.

    摘要翻译： 磁存储器包括具有磁记录层的磁阻效应元件，在磁阻效应元件上或其下方沿第一方向延伸的第一布线，设置在第一布线的至少两侧的覆盖层，以及写入电路， 通过第一布线传递电流，以便通过电流产生的磁场将信息记录在磁记录层中。 覆盖层由磁性材料制成，并且在第一方向上具有单轴各向异性，沿着该方向发生覆盖层的磁化。

    Magnetoresistance element, magnetic memory, and magnetic head
    100.
    发明申请
    Magnetoresistance element, magnetic memory, and magnetic head 审中-公开
    磁阻元件，磁记忆体和磁头

    公开(公告)号：US20060114716A1

    公开(公告)日：2006-06-01

    申请号：US11335468

    申请日：2006-01-20

    申请人： Tadashi Kai ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Yoshiaki Saito

    发明人： Tadashi Kai ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Yoshiaki Saito

    IPC分类号： G11C11/00

    CPC分类号： G11B5/3906 ,  G11C11/16

    摘要： There is provided a magnetoresistance element including a free layer that includes a first ferromagnetic layer and a second ferromagnetic layer whose magnetization directions are equal to each other and a nonmagnetic film intervening between the first and second ferromagnetic layers, a pinned layer including a third ferromagnetic layer that faces the free layer, and a nonmagnetic layer intervening between the free layer and the pinned layer, the nonmagnetic film containing a material selected from the group including titanium, vanadium, zirconium, niobium, molybdenum, technetium, hafnium, tungsten, rhenium, alloys thereof, semiconductors and insulators.

    摘要翻译： 提供了包括自由层的磁阻元件，该自由层包括第一铁磁层和其磁化方向彼此相等的第二铁磁层和介于第一和第二铁磁层之间的非磁性膜，包括第三铁磁层 面向自由层和介于自由层和被钉扎层之间的非磁性层，非磁性膜含有选自钛，钒，锆，铌，钼，锝，铪，钨，铼，合金中的材料 半导体和绝缘体。