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    Magnetoresistance element, magnetic memory, and magnetic head
    1.
    发明申请
    Magnetoresistance element, magnetic memory, and magnetic head 审中-公开
    磁阻元件，磁记忆体和磁头

    公开(公告)号：US20060114716A1

    公开(公告)日：2006-06-01

    申请号：US11335468

    申请日：2006-01-20

    申请人： Tadashi Kai ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Yoshiaki Saito

    发明人： Tadashi Kai ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Yoshiaki Saito

    IPC分类号： G11C11/00

    CPC分类号： G11B5/3906 ,  G11C11/16

    摘要： There is provided a magnetoresistance element including a free layer that includes a first ferromagnetic layer and a second ferromagnetic layer whose magnetization directions are equal to each other and a nonmagnetic film intervening between the first and second ferromagnetic layers, a pinned layer including a third ferromagnetic layer that faces the free layer, and a nonmagnetic layer intervening between the free layer and the pinned layer, the nonmagnetic film containing a material selected from the group including titanium, vanadium, zirconium, niobium, molybdenum, technetium, hafnium, tungsten, rhenium, alloys thereof, semiconductors and insulators.

    摘要翻译： 提供了包括自由层的磁阻元件，该自由层包括第一铁磁层和其磁化方向彼此相等的第二铁磁层和介于第一和第二铁磁层之间的非磁性膜，包括第三铁磁层 面向自由层和介于自由层和被钉扎层之间的非磁性层，非磁性膜含有选自钛，钒，锆，铌，钼，锝，铪，钨，铼，合金中的材料 半导体和绝缘体。

    Magnetoresistive element and magnetic memory
    3.
    发明授权
    Magnetoresistive element and magnetic memory 有权
    磁阻元件和磁记忆体

    公开(公告)号：US07470963B2

    公开(公告)日：2008-12-30

    申请号：US11213869

    申请日：2005-08-30

    申请人： Tadashi Kai ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Yoshiaki Saito

    发明人： Tadashi Kai ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Yoshiaki Saito

    IPC分类号： H01L21/8246

    CPC分类号： G11C11/15 ,  G11C11/16 ,  Y10T428/24917

    摘要： There are provided a first reference layer, in which a direction of magnetization is fixed, and a storage layer including a main body, in which a length in an easy magnetization axis direction is longer than a length in a hard magnetization axis direction, and a projecting portion provided to a central portion of the main body in the hard magnetization axis direction, a direction of magnetization of the storage layer being changeable in accordance with an external magnetic field.

    摘要翻译： 提供了固定有磁化方向的第一参考层和容易磁化轴方向的长度比硬磁化轴方向的长度长的主体的存储层，以及 在硬磁化轴方向上设置在主体的中心部的突出部，存储层的磁化方向根据外部磁场而变化。

    Method for producing magnetic memory device
    6.
    发明授权
    Method for producing magnetic memory device 有权
    磁存储器件的制造方法

    公开(公告)号：US07247506B2

    公开(公告)日：2007-07-24

    申请号：US11389281

    申请日：2006-03-27

    申请人： Minoru Amano ,  Tatsuya Kishi ,  Yoshiaki Saito ,  Tomomasa Ueda ,  Hiroaki Yoda

    发明人： Minoru Amano ,  Tatsuya Kishi ,  Yoshiaki Saito ,  Tomomasa Ueda ,  Hiroaki Yoda

    IPC分类号： H01L21/00

    CPC分类号： G11C11/15 ,  Y10T29/49021

    摘要： There is provided a magnetic memory device which has a small switching current for a writing line and which has a small variation therein. A method for producing such a magnetic memory device includes: forming a magnetoresistive effect element; forming a first insulating film so as to cover the magnetoresistive effect element; forming a coating film so as to cover the first insulating film; exposing a top face of the magnetoresistive effect element; forming an upper writing line on the magnetoresistive effect element; exposing the first insulating film on a side portion of the magnetoresistive effect element by removing a part or all of the coating film; and forming a yoke structural member so as to cover at least a side portion of the upper writing line and so as to contact the exposed first insulating film on the side portion of the magnetoresistive effect element.

    摘要翻译： 提供了一种对于写入线具有小的开关电流并且其变化小的磁存储器件。 一种制造这种磁存储器件的方法包括：形成磁阻效应元件; 形成第一绝缘膜以覆盖磁阻效应元件; 形成涂膜以覆盖第一绝缘膜; 暴露磁阻效应元件的顶面; 在磁阻效应元件上形成上部写入线; 通过去除一部分或全部涂膜，将第一绝缘膜暴露在磁阻效应元件的侧面上; 以及形成轭结构件，以便覆盖上部书写线的至少一个侧面部分，以便与该磁阻效应元件侧面上暴露的第一绝缘膜接触。

    Magnetic memory
    9.
    发明授权
    Magnetic memory 失效
    磁记忆

    公开(公告)号：US07023725B2

    公开(公告)日：2006-04-04

    申请号：US10864522

    申请日：2004-06-10

    申请人： Yoshiaki Saito ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Minoru Amano

    发明人： Yoshiaki Saito ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Minoru Amano

    IPC分类号： G11C7/00

    CPC分类号： G11C11/15

    摘要： There are provided at least one wire, a magnetoresistive effect element having a storage layer whose magnetization direction varies according to a current magnetic field generated by causing a current to flow in the wire, and first yokes provided so as to be spaced from at least one pair of opposed side faces of the magnetoresistive effect element to form a magnetic circuit in cooperation with the magnetoresistive effect element when a current is caused to flow in the wire. Each of the first yokes has at least two soft magnetic layers which are stacked via a non-magnetic layer.

    摘要翻译： 提供了至少一根导线，一个磁阻效应元件，其具有存储层，其磁化方向根据通过使电流在线中流动而产生的电流磁场而变化，并且第一磁轭设置成与至少一个 磁阻效应元件的一对相对的侧面，当电流在电线中流动时与磁阻效应元件协同地形成磁路。 每个第一轭具有至少两个通过非磁性层堆叠的软磁性层。