摘要:
A shift register includes several stages of shift register units. Each shift register unit includes a first level lifting unit, first level lowering unit, first driving unit and level controller. The first level lifting unit and first level lowering unit control the scan signal to be equal to a first timing signal and first voltage, respectively. The level controller includes an input unit, a charge storage unit, a second level lifting unit and a second level lowering unit. The input unit controls the third control signal to be equal to the first voltage at a node. The charge storage unit stores a voltage of the timing signal at the node. The second level lifting unit and second level lowering unit respectively control the second control signal to be equal to the third control signal and the first voltage to turn on and turn off the first level lowering unit.
摘要:
An active matrix substrate is provided. The active matrix substrate includes a substrate, scan lines, data lines, and pixel units. The scan lines, data lines, and pixel units are all disposed over the substrate. The pixel unit includes an active component, a pixel electrode, and an auxiliary electrode. The active components are electrically connected with the scan lines and data lines. The pixel electrode has openings extended from the edge of the pixel electrode to the interior of the pixel electrode. The auxiliary electrode is electrically connected with the pixel electrode controlled by a previous scan line and includes a body portion and extending portions disposed in the openings. The pixel electrode is electrically connected with the auxiliary electrode of a pixel unit controlled by a next scan line.
摘要:
A structure and driving method for active photoelectric element that aims to every matrix-arranged pixel on the display panel. The pixel structure includes a set of first thin film diodes and a set of second thin film diodes. The first set and the second set of film diodes are connected at a node. The electrical impedances of the first set and the second set of film diodes are unsymmetrical. The first set of film diodes connects to the select lines of the pixel while the second set of film diodes connects to the select lines of the pixel on the next row, which forms a configuration that the up/down pixels share one select line. Consequently, the driving signal for the up select line of a single pixel is determined by the driving signal for the down select line of the up pixel so as to reduce the quantity of select lines.
摘要:
A driving circuit of active matrix organic electroluminescence diode is disclosed. Each pixel includes three TFTs and two capacitors. A gate of scan reset TFT is controlled by the scan line of the row where the pixel is located and a drain of scan reset TFT is connected to the data line of the column where the pixel is situated. Detect TFT is controlled by one Threshold-Lock line. One capacitor Cd is used to store data voltage (Vdata) of image signals and the other capacitor Ct is used to store the threshold voltage (Vth) of driving TFT. Therefore, the sum of capacitors Cd and Ct will drive the driving TFT to output the corresponding current to the organic electroluminescence element.
摘要:
The main circuit of each stage of the high-reliability shift register circuit is composed of transistors, and the turn-on time for the four transistors are only 1˜2 pulse time within one frame time. Transistors construct an inverter circuit which continuously offers a high-level supply voltage that controls activities of transistors so as to continuously offer a low-level supply voltage to the first node and the output terminal such that avoids the first node and the output terminal being in a floating state. Besides, one of the transistor acts as a charging circuit that extends the lifetime of another transistor. This circuit avoids the affection on the behavior of the shift register circuit that is caused by an a-Si (amorphous silicon) TFT under a sustained stress.
摘要:
A driving circuit of active matrix organic electroluminescence diode is disclosed. Each pixel includes three TFTs and two capacitors. A gate of scan reset TFT is controlled by the scan line of the row where the pixel is located and a drain of scan reset TFT is connected to the data line of the column where the pixel is situated. Detect TFT is controlled by one Threshold-Lock line. One capacitor Cd is used to store data voltage (Vdata) of image signals and the other capacitor Ct is used to store the threshold voltage (Vth) of driving TFT. Therefore, the sum of capacitors Cd and Ct will drive the driving TFT to output the corresponding current to the organic electroluminescence element.
摘要:
A field emission display panel device that incorporates carbon nanotube emitter layers for emitting electrons wherein the carbon nanotube layers has a smaller width than the conductive paste layers it is deposited on is disclosed. The width of the carbon nanotube layer should be less than ¾ of the width of the conductive paste layer, or in a range between about ¼ and ¾ of the width of the conductive paste layer, i.e. such as a silver paste layer. The present invention novel structure prevents the overflow of the carbon nanotubes, after a curing process for the nanotubes is conducted, onto the sidewall of the conductive paste layer, and thus significantly improves the electron density projected toward the flourescent powder coating layer to produce an image with reduced electron scattering. As a result, image clarity, definition and contrast can be improved in the FED device.
摘要:
A pixel structure of a full-color organic light-emitting diode (OLED) display device comprises a black matrix, a color changing medium, two thin film transistors, a storage capacitor, and an OLED device arranged on a substrate. The pixel structure of the display device uses blue organic light-emitting diodes or polymer light-emitting diodes as electroluminescent media. The low-temperature poly Si (LTPS) thin film transistors provide a current to the OLED device and serve as an active driving device. The color changing medium changes blue light into red or green light to form full-color OLED. The processing steps include the black matrix process, the island process, the gate process, the interlayer process, the color changing medium process, and the OLED deposition process. Because a color changing medium is integrated on the LTPS thin film transistors, this invention can make display devices of high resolution, high luminous efficiency and wide viewing angle.
摘要:
A planar color lamp powered by field emission nanotube emitters and a method for fabricating such lamp are provided. The planar color lamp is constructed with a lamp chamber having at least three spaced-apart, serpentine-shaped emitter stacks formed on a base plate, and at least three spaced-apart, serpentine-shaped fluorescent coating strips formed on a cover plate wherein each of the fluorescent coating strips emits a primary color of red, green or blue when activated by electrons emitted from the nanotube emitter stacks. The nanotube emitter stacks can be advantageously formed by a low cost, thick film printing technique with a material of a mixture of a polymeric binder and nanometer dimensioned hollow fibers such as carbon, diamond or diamond-like carbon material. The present invention planar field emission color lamp provides the advantages of a backlight and color filters into a single compact package that can be fabricated at low cost.
摘要:
A field emission display device utilizing a nanotube emitter layer instead of microtips and a method for fabricating such device by a thick film printing technique instead of thin film deposition and photolithographic methods are provided. In the device, various layers of materials including a layer of nanotube emitter material can be formed by a thick film printing technique on a glass plate. The nanotube emitter material can be nanotubes of carbon, diamond or a diamond-like carbon material that is mixed with a solvent-containing paste. The resulting paste has a consistency suitable for a thick film printing process. The nanotubes should have diameters between about 30 nanometers and about 50 nanometers for use in the present invention device. The screen printing or the thick film printing method of the present invention can be carried out at substantially lower cost than the thin film deposition and photolithographic methods. Furthermore, no size limit is imposed in the thick film printing technique in contrast to a substrate size limit due to a deposition chamber used in a thin film deposition process. The present invention novel method is especially suitable for the fabrication of large-size FED screens.