公开(公告)号：US07301817B2

公开(公告)日：2007-11-27

申请号：US11260658

申请日：2005-10-27

申请人： Yan Li ,  Long Pham

发明人： Yan Li ,  Long Pham

IPC分类号： G11C16/06

CPC分类号： G11C11/5628 ,  G11C16/0483 ,  G11C16/12 ,  G11C16/3454 ,  G11C16/3459 ,  G11C2211/5621

摘要： In a non-volatile memory, the initiation of program verification is adaptively set so that programming time is decreased. In one approach, non-volatile storage elements are programmed based on a lower page of data to have a voltage threshold (VTH) that falls within a first VTH distribution or a higher, intermediate VTH distribution. Subsequently, the non-volatile storage elements with the first VTH distribution either remain there, or are programmed to a second VTH distribution, based on an upper page of data. The non-volatile storage elements with the intermediate VTH distribution are programmed to third and fourth VTH distributions. The non-volatile storage elements being programmed to the third VTH distribution are specially identified and tracked. Verification of the non-volatile storage elements being programmed to the fourth VTH distribution is initiated after one of the identified non-volatile storage elements transitions to the third VTH distribution from the intermediate VTH distribution.

摘要翻译： 在非易失性存储器中，自适应地设定程序验证的启动，从而减少编程时间。 在一种方法中，非易失性存储元件基于较低数据页被编程以具有落在第一V TH分布内的电压阈值（V TH TH TH），或 较高的中间V TH分配。 随后，具有第一V TH分布的非易失性存储元件基于数据的上部页面保留在那里，或被编程到第二V TH分配。 具有中间V TH分布的非易失性存储元件被编程到第三和第四V分布。 专门识别和跟踪正在编程到第三VTH分配的非易失性存储元件。 正在编程到第四VTH分布的非易失性存储元件的验证在所识别的非易失性存储元件中的一个转移到第三V TH分布之后启动， 中间V TH分配。

公开(公告)号：US07301816B2

公开(公告)日：2007-11-27

申请号：US11616762

申请日：2006-12-27

申请人： Yan Li ,  Jian Chen

发明人： Yan Li ,  Jian Chen

IPC分类号： G11C11/34

CPC分类号： G11C16/26 ,  G11C11/5642 ,  G11C16/3418 ,  G11C16/3422

摘要： Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). The problem occurs most pronouncedly between sets of adjacent memory cells that have been programmed at different times. To compensate for this coupling, the read process for a given memory cell will take into account the programmed state of an adjacent memory cell.

摘要翻译： 存在于非易失性存储单元的浮动栅极（或其他电荷存储元件）上的表观电荷的变化可能发生，因为基于存储在相邻浮动栅极（或其它相邻电荷存储元件）中的电荷的电场的耦合 ）。 在不同时间编程的相邻存储器单元组之间最明显地出现该问题。 为了补偿该耦合，给定存储器单元的读取过程将考虑相邻存储器单元的编程状态。

公开(公告)号：US20070157690A1

公开(公告)日：2007-07-12

申请号：US11469162

申请日：2006-08-31

申请人： Changhe Chen ,  Xuchang Xu ,  Masayoshi Sadakata ,  Ligeng Wu ,  Shujuan Wang ,  Yuejin Li ,  Yan Li

发明人： Changhe Chen ,  Xuchang Xu ,  Masayoshi Sadakata ,  Ligeng Wu ,  Shujuan Wang ,  Yuejin Li ,  Yan Li

IPC分类号： C05D9/00

CPC分类号： C05D9/00

摘要： The present invention discloses a novel use of the FGD byproduct from thermal power plants and facilities and the specific method for alkali soil amelioration. In this method, after sampling, amount of Na2CO3, NaHCO3, Mg(HCO3)2,±)Na and ±)Mg can be calculated by analysis. According to the component in FGD byproduct from thermal power plants and facilities, the amount for FGD byproduct from thermal power plants and facilities needed in the alkali soil to be ameliorated can be determined. The FGD byproduct from thermal power plants and facilities are scattered on the surface according to the alkalization degree. After irrigating, the soil is operated just like common land. This invention allows the FGD byproduct from thermal power plants and facilities to be utilized effectively and economically, changing from it from waste to a useful substance. Moreover, it provides a method for alkali soil amelioration, which is fast, efficient, consumes less water, is cost effective, and promising.

摘要翻译： 本发明公开了火力发电厂和设施的FGD副产物的新用途以及碱土改良的具体方法。 在该方法中，在取样之后，Na 2 CO 3，NaHCO 3，Mg（HCO 3 3） 可以通过分析计算得出，±）Na和±）Mg。 根据火电厂和设施FGD副产品的成分，可以确定要改善的碱土中所需的火力发电厂和设施的FGD副产物的含量。 根据碱化度，火电厂和设施的FGD副产物分散在表面。 灌溉后，土壤就像普通土地一样运作。 本发明允许来自火力发电厂和设施的FGD副产物被有效和经济地利用，从废物转化为有用物质。 此外，它提供了一种碱土改良方法，速度快，效率高，耗水少，成本效益高，有前途。

公开(公告)号：US20070142419A1

公开(公告)日：2007-06-21

申请号：US11668099

申请日：2007-01-29

申请人： Hui-Fang Chang ,  Yan Li ,  Eifion Phillips

发明人： Hui-Fang Chang ,  Yan Li ,  Eifion Phillips

IPC分类号： A61K31/4747

CPC分类号： C07D491/22

摘要： Compounds of formula I: and pharmaceutically-acceptable salts thereof, wherein Ar and R are as defined in the specification, compositions containing such compounds and the use of such compounds and compositions for use in therapy.

摘要翻译： 式I化合物及其药学上可接受的盐，其中Ar和R如说明书中所定义，含有这些化合物的组合物以及用于治疗的这些化合物和组合物的用途。

公开(公告)号：US20070109850A1

公开(公告)日：2007-05-17

申请号：US11616757

申请日：2006-12-27

申请人： Yan Li ,  Jian Chen

发明人： Yan Li ,  Jian Chen

IPC分类号： G11C16/04

CPC分类号： G11C16/26 ,  G11C11/5642 ,  G11C16/3418 ,  G11C16/3422

摘要： Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). The problem occurs most pronouncedly between sets of adjacent memory cells that have been programmed at different times. To compensate for this coupling, the read process for a given memory cell will take into account the programmed state of an adjacent memory cell.

公开(公告)号：US20070103987A1

公开(公告)日：2007-05-10

申请号：US11616762

申请日：2006-12-27

申请人： Yan Li ,  Jian Chen

发明人： Yan Li ,  Jian Chen

IPC分类号： G11C16/06 ,  G11C11/34

CPC分类号： G11C16/26 ,  G11C11/5642 ,  G11C16/3418 ,  G11C16/3422

摘要： Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). The problem occurs most pronouncedly between sets of adjacent memory cells that have been programmed at different times. To compensate for this coupling, the read process for a given memory cell will take into account the programmed state of an adjacent memory cell.

公开(公告)号：US20070103975A1

公开(公告)日：2007-05-10

申请号：US11616769

申请日：2006-12-27

申请人： Yan Li ,  Jian Chen

发明人： Yan Li ,  Jian Chen

IPC分类号： G11C16/04

CPC分类号： G11C16/26 ,  G11C11/5642 ,  G11C16/3418 ,  G11C16/3422

摘要： Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). The problem occurs most pronouncedly between sets of adjacent memory cells that have been programmed at different times. To compensate for this coupling, the read process for a given memory cell will take into account the programmed state of an adjacent memory cell.

公开(公告)号：US07132259B1

公开(公告)日：2006-11-07

申请号：US09648692

申请日：2000-08-25

申请人： J. Oliver Dolly ,  Yan Li ,  Kuo Chion Chan

发明人： J. Oliver Dolly ,  Yan Li ,  Kuo Chion Chan

IPC分类号： C12P21/02 ,  C12N15/62

CPC分类号： C07K14/33 ,  A61K38/00 ,  C12N9/52 ,  Y02A50/469

摘要： The invention provides, in part, compositions comprising activatable recombinant neurotoxins and polypeptides derived therefrom. The invention also provides, in part, nucleic acid molecules encoding such polypeptides, and methods of making such polypeptides and nucleic acid molecules.

摘要翻译： 本发明部分地提供包含可活化的重组神经毒素和由其衍生的多肽的组合物。 本发明还部分地提供了编码这种多肽的核酸分子，以及制备这种多肽和核酸分子的方法。

公开(公告)号：US20060236434A1

公开(公告)日：2006-10-19

申请号：US11471754

申请日：2006-06-21

申请人： Mark Conkling ,  Yan Li

发明人： Mark Conkling ,  Yan Li

IPC分类号： A24C5/34 ,  A01H5/00 ,  A24C5/32

CPC分类号： C12N15/8223 ,  C07K14/415 ,  C12N9/1077 ,  C12N15/8216 ,  C12N15/8222 ,  C12N15/8227 ,  C12N15/8243 ,  C12N15/8251 ,  C12N15/8257

摘要： The present application describes isolated nucleic acids that contain a Nic gene product responsive element, and the use thereof in methods of producing transgenic tobacco plants having reduced levels of nicotine and/or TSNA therein, as well as other plants or host cells that contain altered levels of a protein of interest therein due to inclusion of a cis-acting decoy element therein.

公开(公告)号：US20060209592A1

公开(公告)日：2006-09-21

申请号：US11083514

申请日：2005-03-16

申请人： Yan Li ,  Seungpil Lee ,  Siu Chan

发明人： Yan Li ,  Seungpil Lee ,  Siu Chan

IPC分类号： G11C16/04

CPC分类号： G11C11/5642 ,  G11C16/26 ,  G11C2211/5621

摘要： A non-volatile memory device capable of reading and writing a large number of memory cells with multiple read/write circuits in parallel has features to reduce power consumption during read, and program/verify operations. A read or program verify operation includes one or more sensing cycles relative to one or more demarcation threshold voltages to determine a memory state. In one aspect, selective memory cells among the group being sensed in parallel have their conduction currents turned off when they are determined to be in a state not relevant to the current sensing cycle. In another aspect, a power-consuming period is minimized by preemptively starting any operations that would prolong the period. In a program/verify operation cells not to be programmed have their bit lines charged up in the program phase. Power is saved when a set of these bit lines avoids re-charging at every passing of a program phase.