公开(公告)号：US4506367A

公开(公告)日：1985-03-19

申请号：US433085

申请日：1982-10-06

申请人： Shigeyuki Akiba ,  Kazuo Sakai ,  Katsuyuki Utaka ,  Yuichi Matsushima

发明人： Shigeyuki Akiba ,  Kazuo Sakai ,  Katsuyuki Utaka ,  Yuichi Matsushima

IPC分类号： H01S5/00 ,  H01S5/10 ,  H01S5/12 ,  H01S3/19

CPC分类号： H01S5/12 ,  H01S5/10 ,  H01S5/1082

摘要： A distributed feedback semiconductor laser which is characterized in that periodic corrugations are performed in the surface of an InGaAsP quaternary layer so that an InP layer is grown thereon so as to overcome difficulties in prior arts.

摘要翻译： 一种分布式反馈半导体激光器，其特征在于在InGaAsP四元层的表面进行周期性波纹，使得InP层在其上生长，以克服现有技术中的困难。

公开(公告)号：US4502950A

公开(公告)日：1985-03-05

申请号：US575717

申请日：1984-01-31

申请人： Masaki Ikematsu ,  Isao Honzyo ,  Kazuo Sakai

发明人： Masaki Ikematsu ,  Isao Honzyo ,  Kazuo Sakai

IPC分类号： C10G21/00 ,  C10G21/06 ,  C10G21/08 ,  C10G21/14 ,  C10G21/16

CPC分类号： C10G21/16 ,  C10G21/003 ,  C10G21/06 ,  C10G21/08 ,  C10G21/14

摘要： A continuous process for solvent deasphalting asphaltene-containing hydrocarbons which comprises mixing (A) 100 parts by weight of asphaltene-containing hydrocarbons with (B) 0.005-0.5 parts by weight of an amorphous silicon dioxide and/or a silicate compound and also with (C) 5-2000 parts by weight of a solvent such as n-heptane, n-hexane, n-heptane or a mixed n-pentane.n-butanol solvent, to form a mixture which is then allowed to stand still to precipitate and separate the asphaltene therefrom thereby obtaining a deasphalted oil.

摘要翻译： 一种用于溶剂脱沥青含沥青质烃的连续方法，其包括将（A）100重量份的含沥青质的烃与（B）0.005-0.5重量份的无定形二氧化硅和/或硅酸盐化合物以及（ C）5-2000重量份溶剂如正庚烷，正己烷，正庚烷或混合正戊烷正丁醇溶剂，以形成混合物，然后静置沉淀， 从中分离沥青质，从而获得脱沥青油。

公开(公告)号：US4340966A

公开(公告)日：1982-07-20

申请号：US122171

申请日：1980-02-19

申请人： Shigeyuki Akiba ,  Yasuharu Suematsu ,  Shigehisa Arai ,  Masanobu Kodaira ,  Yoshio Itaya ,  Kenichi Iga ,  Chuichi Ota ,  Takaya Yamamoto ,  Kazuo Sakai

发明人： Shigeyuki Akiba ,  Yasuharu Suematsu ,  Shigehisa Arai ,  Masanobu Kodaira ,  Yoshio Itaya ,  Kenichi Iga ,  Chuichi Ota ,  Takaya Yamamoto ,  Kazuo Sakai

IPC分类号： H01L21/208 ,  H01L33/12 ,  H01L33/14 ,  H01L33/30 ,  H01S5/00 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/3235 ,  H01S5/32391

摘要： A semiconductor laser formed on an InP substrate to have a hetero structure comprising a plurality of In.sub.1-x Ga.sub.x`As.sub.y P.sub.1-y (0.42y.ltoreq.x.ltoreq.0.5y,0.ltoreq.y.ltoreq.1) layers which are lattice-matched with InP, in which a light emitting layer included in the layers and having a forbidden band width larger than 0.6 eV but smaller than 0.9 eV at room temperature is sandwiched between two InP layers on the InP substrate, and in which there is provided between the light emitting layer and the InP layer grown thereon at least one buffer layer having a forbidden band width larger than the forbidden band width of the light emitting layer but smaller than the forbidden band width of InP. The forbidden band width of the buffer layer at room temperature may be larger than 0.8 eV but smaller than 1.0 eV.

摘要翻译： 在InP衬底上形成的具有包含多个In1-xGax'AsyP1-y（0.42y≤x≤0.5y，0≤y≤1）的异质结构的半导体激光器，它们是 与InP晶格匹配，其中包含在层中并且具有大于0.6eV但小于0.9eV的禁带宽的发光层在InP衬底上夹在两个InP层之间，其中存在 设置在发光层和在其上生长的至少一个具有比发光层的禁带宽度大的禁带宽度的缓冲层，但小于InP的禁带宽度的InP层。 缓冲层在室温下的禁带宽度可能大于0.8eV但小于1.0eV。