公开(公告)号：US5721751A

公开(公告)日：1998-02-24

申请号：US796506

申请日：1997-02-06

申请人： Yoshio Itaya ,  Shinichi Matsumoto

发明人： Yoshio Itaya ,  Shinichi Matsumoto

IPC分类号： H01S5/042 ,  H01S5/227 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/0421 ,  H01S5/2275 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/3434

摘要： A semiconductor laser includes (a) a semiconductor substrate of a first conductivity type on which is provided (b) a mesa stripe portion having a multilayer structure. The multilayer structure includes (b-1) an active layer provided on the semiconductor substrate. The laser also includes (c) a buried current blocking layer arranged on both sides of the mesa stripe portion, (d) a clad layer of a second conductivity type provided on the semiconductor substrate through at least a portion of the active layer, and (e) a contact layer of the second conductivity type provided on the clad layer. The contact layer includes a first contact layer contacting the clad layer and a second contact layer provided on the first contact layer. The first contact layer has an energy gap smaller than that of the clad layer and larger than that of the second contact layer. Preferably, the first contact layer is an InGaAsP semiconductor layer having an energy gap within the range of from 0.82 eV to 1.12 eV, the second contact layer is selected from the group consisting of an InGaAs semiconductor layer and an InGaAsP semiconductor layer which has an energy gap of 0.8 eV, and the clad layer contacting the first contact layer is an InP layer.

摘要翻译： 半导体激光器包括（a）第一导电类型的半导体衬底，其上设置有（b）具有多层结构的台面条状部分。 多层结构包括（b-1）设置在半导体衬底上的有源层。 激光器还包括（c）设置在台面条状部分两侧的掩埋电流阻挡层，（d）通过至少一部分有源层设置在半导体衬底上的第二导电类型的覆层，和 e）设置在包覆层上的第二导电类型的接触层。 接触层包括接触覆盖层的第一接触层和设置在第一接触层上的第二接触层。 第一接触层的能隙小于覆盖层的能隙，大于第二接触层的能隙。 优选地，第一接触层是具有在0.82eV至1.12eV范围内的能隙的InGaAsP半导体层，第二接触层选自具有能量的InGaAs半导体层和InGaAsP半导体层 间隙为0.8eV，与第一接触层接触的包覆层为InP层。

公开(公告)号：US4410994A

公开(公告)日：1983-10-18

申请号：US302705

申请日：1981-09-16

申请人： Chuichi Ota ,  Yasuharu Suematsu ,  Yoshio Itaya

发明人： Chuichi Ota ,  Yasuharu Suematsu ,  Yoshio Itaya

IPC分类号： H01S5/00 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/323

摘要： A semiconductor laser having a multi-layer film which is inclusive of an active layer and formed on an InP substrate, in which at least one layer adjacent to the active layer is formed of a material which is a composition having a larger band gap than InP and whose component ratio is so selected as to match with the lattice constant of InP, thereby to ensure that minority carriers injected into the active layer efficiently contribute to laser operation. The material has a composition including at least three elements in addition to InP.

摘要翻译： 一种具有多层膜的半导体激光器，其包括活性层并形成在InP衬底上，其中与有源层相邻的至少一层是由具有比InP大的带隙的组合物形成的材料 并且其分量比被选择为与InP的晶格常数匹配，从而确保注入有源层的少数载流子有效地促成激光操作。 除了InP之外，该材料还具有包含至少三种元素的组合物。

公开(公告)号：US4340966A

公开(公告)日：1982-07-20

申请号：US122171

申请日：1980-02-19

申请人： Shigeyuki Akiba ,  Yasuharu Suematsu ,  Shigehisa Arai ,  Masanobu Kodaira ,  Yoshio Itaya ,  Kenichi Iga ,  Chuichi Ota ,  Takaya Yamamoto ,  Kazuo Sakai

发明人： Shigeyuki Akiba ,  Yasuharu Suematsu ,  Shigehisa Arai ,  Masanobu Kodaira ,  Yoshio Itaya ,  Kenichi Iga ,  Chuichi Ota ,  Takaya Yamamoto ,  Kazuo Sakai

IPC分类号： H01L21/208 ,  H01L33/12 ,  H01L33/14 ,  H01L33/30 ,  H01S5/00 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/3235 ,  H01S5/32391

摘要： A semiconductor laser formed on an InP substrate to have a hetero structure comprising a plurality of In.sub.1-x Ga.sub.x`As.sub.y P.sub.1-y (0.42y.ltoreq.x.ltoreq.0.5y,0.ltoreq.y.ltoreq.1) layers which are lattice-matched with InP, in which a light emitting layer included in the layers and having a forbidden band width larger than 0.6 eV but smaller than 0.9 eV at room temperature is sandwiched between two InP layers on the InP substrate, and in which there is provided between the light emitting layer and the InP layer grown thereon at least one buffer layer having a forbidden band width larger than the forbidden band width of the light emitting layer but smaller than the forbidden band width of InP. The forbidden band width of the buffer layer at room temperature may be larger than 0.8 eV but smaller than 1.0 eV.

摘要翻译： 在InP衬底上形成的具有包含多个In1-xGax'AsyP1-y（0.42y≤x≤0.5y，0≤y≤1）的异质结构的半导体激光器，它们是 与InP晶格匹配，其中包含在层中并且具有大于0.6eV但小于0.9eV的禁带宽的发光层在InP衬底上夹在两个InP层之间，其中存在 设置在发光层和在其上生长的至少一个具有比发光层的禁带宽度大的禁带宽度的缓冲层，但小于InP的禁带宽度的InP层。 缓冲层在室温下的禁带宽度可能大于0.8eV但小于1.0eV。