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公开(公告)号：US20100195271A1
公开(公告)日：2010-08-05
申请号：US12694477
申请日：2010-01-27
申请人： Isao ABE , Kenichi Asami , Hajime Osaki , Yoshiyuki Matsunaga , Hideo Kozuka
发明人： Isao ABE , Kenichi Asami , Hajime Osaki , Yoshiyuki Matsunaga , Hideo Kozuka
摘要： An electrolytic capacitor includes: a case including a case body, in which an electrolytic capacitor element is disposed in a sealed manner and filled up with an electrolytic solution, and a safety valve is mounted to the case body for jetting an evaporated gas of the electrolytic solution filling the electrolytic capacitor element; a cover member mounted to the case so as to cover the safety valve provided for the case; a first fixing unit mounted to the cover member so as to prevent the cover member from dismounting when the evaporated gas of the electrolytic solution is jetted outward; and a second fixing unit disposed in association with the first fixing unit and adopted to reinforce and assist a function of the first fixing unit to thereby prevent the cover member from being dismounted. An electric equipment includes a lighting circuit including circuit components, and an electrolytic capacitor of the structure mentioned above.
摘要翻译： 一种电解电容器包括：壳体，其具有电解电容器元件，其密封地设置有电解液，并且安装在壳体上，用于喷射电解液的蒸发气体 溶液填充电解电容元件; 安装到所述壳体以覆盖为所述壳体提供的安全阀的盖构件; 第一固定单元，安装到所述盖构件，以便当所述电解液的蒸发气体向外喷射时防止所述盖构件的拆卸; 以及与第一固定单元相关联地设置的第二固定单元，并且用于加强和辅助第一固定单元的功能，从而防止盖构件的拆卸。 电气设备包括具有电路部件的点灯电路和上述结构的电解电容器。
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公开(公告)号：US20100165162A1
公开(公告)日：2010-07-01
申请号：US12720549
申请日：2010-03-09
IPC分类号： H04N5/335
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14636 , H04N5/341 , H04N5/3575 , H04N5/3741
摘要： In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor 105 are formed in one active region surrounded by a device isolation region. The floating diffusion layer section 103 included in one photosensitive cell is connected not to the amplifier transistor 104 included in that cell but to the gate of the amplifier transistor 104 included in another photosensitive cell adjacent to the one photosensitive cell in the column direction. A polysilicon wire 111 connects the transfer gates 102 arranged in the same row, and a polysilicon wire 112 connects the reset transistors 105 arranged in the same row. For connection in the row direction, only polysilicon wires are used.
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公开(公告)号：US20100163712A1
公开(公告)日：2010-07-01
申请号：US12720554
申请日：2010-03-09
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14636 , H04N5/341 , H04N5/3575 , H04N5/3741
摘要： In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor 105 are formed in one active region surrounded by a device isolation region. The floating diffusion layer section 103 included in one photosensitive cell is connected not to the amplifier transistor 104 included in that cell but to the gate of the amplifier transistor 104 included in another photosensitive cell adjacent to the one photosensitive cell in the column direction. A polysilicon wire 111 connects the transfer gates 102 arranged in the same row, and a polysilicon wire 112 connects the reset transistors 105 arranged in the same row. For connection in the row direction, only polysilicon wires are used.
摘要翻译： 在每个感光单元中，在由器件隔离区包围的一个有源区域中形成光电二极管101，传输门102，浮动扩散层部分103，放大器晶体管104和复位晶体管105。 包含在一个感光单元中的浮动扩散层部分103不是连接到包括在该单元中的放大器晶体管104，而是连接到在列方向上与一个感光单元相邻的另一个感光单元中的放大器晶体管104的栅极。 多晶硅导线111连接排列在同一行的传输门102，并且多晶硅布线112连接布置在同一行中的复位晶体管105。 为了在行方向上连接，仅使用多晶硅线。
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公开(公告)号：US07714920B2
公开(公告)日：2010-05-11
申请号：US12071090
申请日：2008-02-15
IPC分类号： H04N5/335
CPC分类号： H04N5/378 , H04N5/3577 , H04N5/374
摘要： Photosensitive cells each includes a photodiode (1), a transfer gate (2), a floating diffusion layer portion (3), an amplifying transistor (4), and a reset transistor (5). Drains of the amplifying transistors (4) of the photosensitive cells are connected to a power supply line (10), and a pulsed power supply voltage (VddC) is applied to the power supply line (10). Here, a low-level potential (VddC_L) of the power supply voltage has a predetermined potential higher than zero potential. Specifically, by making the low-level potential (VddC_L) higher than channel potentials obtained when a low level is applied to the reset transistors (5), or channel potentials obtained when a low level is applied to the transfer gates (2), or channel potentials of the photodiodes (1), a reproduced image with low noise is read.
摘要翻译： 感光单元每个包括光电二极管（1），传输门（2），浮动扩散层部分（3），放大晶体管（4）和复位晶体管（5）。 感光单元的放大晶体管（4）的漏极连接到电源线（10），并且将脉冲电源电压（VddC）施加到电源线（10）。 这里，电源电压的低电平电位（VddC_L）具有高于零电位的预定电位。 具体地说，通过使低电位电位（VddC_L）高于当向复位晶体管（5）施加低电平时获得的沟道电位，或者当低电平施加到传输门（2）时获得的沟道电位，或 读取光电二极管（1）的通道电位，读出低噪声的再现图像。
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公开(公告)号：US07696543B2
公开(公告)日：2010-04-13
申请号：US11396485
申请日：2006-04-04
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14636 , H04N5/341 , H04N5/3575 , H04N5/3741
摘要： In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor 105 are formed in one active region surrounded by a device isolation region. The floating diffusion layer section 103 included in one photosensitive cell is connected not to the amplifier transistor 104 included in that cell but to the gate of the amplifier transistor 104 included in another photosensitive cell adjacent to the one photosensitive cell in the column direction. A polysilicon wire 111 connects the transfer gates 102 arranged in the same row, and a polysilicon wire 112 connects the reset transistors 105 arranged in the same row. For connection in the row direction, only polysilicon wires are used.
摘要翻译： 在每个感光单元中，在由器件隔离区包围的一个有源区域中形成光电二极管101，传输门102，浮动扩散层部分103，放大器晶体管104和复位晶体管105。 包含在一个感光单元中的浮动扩散层部分103不是连接到包括在该单元中的放大器晶体管104，而是连接到在列方向上与一个感光单元相邻的另一个感光单元中的放大器晶体管104的栅极。 多晶硅导线111连接排列在同一行的传输门102，并且多晶硅布线112连接布置在同一行中的复位晶体管105。 为了在行方向上连接，仅使用多晶硅线。
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公开(公告)号：US20090322924A1
公开(公告)日：2009-12-31
申请号：US12536814
申请日：2009-08-06
IPC分类号： H04N5/335
CPC分类号： H04N5/378 , H04N5/3577 , H04N5/374
摘要： Photosensitive cells each includes a photodiode (1), a transfer gate (2), a floating diffusion layer portion (3), an amplifying transistor (4), and a reset transistor (5). Drains of the amplifying transistors (4) of the photosensitive cells are connected to a power supply line (10), and a pulsed power supply voltage (VddC) is applied to the power supply line (10). Here, a low-level potential (VddC_L) of the power supply voltage has a predetermined potential higher than zero potential. Specifically, by making the low-level potential (VddC_L) higher than channel potentials obtained when a low level is applied to the reset transistors (5), or channel potentials obtained when a low level is applied to the transfer gates (2), or channel potentials of the photodiodes (1), a reproduced image with low noise is read.
摘要翻译： 感光单元每个包括光电二极管（1），传输门（2），浮动扩散层部分（3），放大晶体管（4）和复位晶体管（5）。 感光单元的放大晶体管（4）的漏极连接到电源线（10），并且将脉冲电源电压（VddC）施加到电源线（10）。 这里，电源电压的低电平电位（VddC_L）具有高于零电位的预定电位。 具体地说，通过使低电位电位（VddC_L）高于向复位晶体管（5）施加低电平时获得的沟道电位，或者当向传输门（2）施加低电平时获得的沟道电位，或 读取光电二极管（1）的通道电位，读出低噪声的再现图像。
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公开(公告)号：US20090237538A1
公开(公告)日：2009-09-24
申请号：US11721241
申请日：2005-12-21
IPC分类号： H04N5/335
CPC分类号： H01L27/14609 , H01L27/14601 , H01L27/14806 , H04N5/35581 , H04N5/374
摘要： A high dynamic range solid-state image pickup device is provided with a plurality of unit cells (500), which convert light into signal charges and accumulate the signal charges, and are arranged by rows and columns for outputting a signal voltage corresponding to the signal charges; a row selecting circuit (110) and a read transistor (502) for setting an accumulation time period for accumulating the signal charges in the unit cells (500) to a first period and a second period different from each other; a row selecting circuit (110) and a vertical selection transistor (505) for selecting a row; sampling capacitors (210a, 210b) connected to the unit cell (500) of each column; and a pulse generating circuit (220) and sampling transistors (200a, 200b) for selecting an arbitrary sampling capacitor from the sampling capacitors (210a, 210b). The pulse generating circuit (220) and the sampling transistors (200a, 200b) performing selection so as to accumulate the signal voltage corresponding to the signal charges accumulated during the first period and the second period in the sampling capacitors (210a, 210b), respectively.
摘要翻译： 高动态范围固态图像拾取装置具有多个单元电池（500），其将光转换为信号电荷并积累信号电荷，并且由行和列排列以输出对应于信号的信号电压 收费 行选择电路（110）和读取晶体管（502），用于将用于将单位单元（500）中的信号电荷累加到不同的第一周期和第二周期的累积时间周期; 用于选择行的行选择电路（110）和垂直选择晶体管（505）; 连接到每列的单电池（500）的取样电容器（210a，210b） 以及用于从采样电容器（210a，210b）中选择任意采样电容器的脉冲发生电路（220）和采样晶体管（200a，200b）。 脉冲发生电路（220）和采样晶体管（200a，200b）分别进行选择，以将与在第一周期和第二周期期间累积的信号电荷对应的信号电压分别累积在采样电容器（210a，210b）中 。
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公开(公告)号：US07567281B2
公开(公告)日：2009-07-28
申请号：US11528523
申请日：2006-09-28
申请人： Takumi Yamaguchi , Takahiko Murata , Shigetaka Kasuga , Takayoshi Yamada , Yoshiyuki Matsunaga , Ryohei Miyagawa
发明人： Takumi Yamaguchi , Takahiko Murata , Shigetaka Kasuga , Takayoshi Yamada , Yoshiyuki Matsunaga , Ryohei Miyagawa
CPC分类号： H04N5/3741 , H04N5/3742
摘要： A solid state imaging device includes an imaging area where a plurality of first pixels and a plurality of second pixels are respectively arranged in the form of a matrix, each of the first pixels and the second pixels having a photoelectric conversion portion and outputting a signal in accordance with brightness of incident light when selected; a plurality of first memories that respectively store signals of selected first pixels out of the plurality of first pixels; and a plurality of second memories that are respectively connected in parallel to the first memories and respectively store signals of selected second pixels out of the plurality of second pixels. The signals stored in the first memories and in the second memories are successively read to a horizontal signal line.
摘要翻译： 固态成像装置包括其中多个第一像素和多个第二像素分别以矩阵形式布置的成像区域，每个第一像素和第二像素具有光电转换部分，并且输出信号 根据入射光的亮度选择; 多个第一存储器，分别存储多个第一像素中所选择的第一像素的信号; 以及分别与第一存储器并联连接并分别存储多个第二像素中所选择的第二像素的信号的多个第二存储器。 存储在第一存储器和第二存储器中的信号被连续地读取到水平信号线。
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公开(公告)号：US07369169B2
公开(公告)日：2008-05-06
申请号：US10916409
申请日：2004-08-12
IPC分类号： H04N5/335
CPC分类号： H04N5/3658 , H01L27/14609 , H01L27/14643 , H04N5/3575 , H04N5/365 , H04N5/374 , H04N5/3745 , H04N5/378
摘要： An MOS-type solid-state imaging apparatus includes an imaging region formed by two-dimensionally arranging unit cells serving as photoelectric conversion portions on a semiconductor substrate, a plurality of vertical address lines arranged in a row direction of the imaging region to select a row of unit cells to be addressed, a plurality of vertical signal lines arranged in a column direction of the imaging region to read out signals from the unit cells in each column, a plurality of load transistors each connected to one end of each of the vertical signal lines, and a plurality of horizontal selection transistors each connected to the other end of each of the vertical signal lines. In this apparatus, each unit cell includes a photodiode serving as a photoelectric conversion portion, an amplification transistor having a gate to which an output from the photodiode is supplied, and a source and a drain respectively connected to the vertical signal line and the vertical address line, an address capacitor connected between the gate of the amplification transistor and the vertical address line, and a reset transistor connected in parallel with the address capacitor.
摘要翻译： MOS型固态成像装置包括：通过二维排列在半导体衬底上作为光电转换部分的单位单元形成的成像区域，沿着成像区域的行方向布置的多个垂直地址线，以选择行 要被寻址的单位单元，沿着成像区域的列方向布置的多条垂直信号线，以从每列中的单位单元读出信号;多个负载晶体管，每个连接到每个垂直信号的一端 线，以及多个水平选择晶体管，每个连接到每个垂直信号线的另一端。 在该装置中，每个单位单元包括用作光电转换部分的光电二极管，具有栅极的放大晶体管，来自光电二极管的输出端分别连接到垂直信号线和垂直地址的源极和漏极 连接在放大晶体管的栅极和垂直地址线之间的地址电容器，以及与地址电容器并联连接的复位晶体管。
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公开(公告)号：US20080088725A1
公开(公告)日：2008-04-17
申请号：US11819577
申请日：2007-06-28
申请人： Yoshiyuki Matsunaga
发明人： Yoshiyuki Matsunaga
IPC分类号： H04N3/14
CPC分类号： H04N9/045 , H04N5/347 , H04N5/374 , H04N5/3741 , H04N5/37457 , H04N5/378 , H04N9/04511
摘要： An amplification-type solid-state imaging device adds a plurality of signals from pixels of the same color, R, G, or B, in order to output the signals. A gravity center in each group of added pixels is arranged without being partial in a pixel region.
摘要翻译： 放大型固态成像装置从相同颜色R，G或B的像素添加多个信号，以输出信号。 每个添加像素组中的重心被布置而不是像素区域中的部分。
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