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公开(公告)号：US6091449A
公开(公告)日：2000-07-18
申请号：US21940
申请日：1998-02-11
申请人： Yoshiyuki Matsunaga , Shinji Ohsawa , Nobuo Nakamura , Hirofumi Yamashita , Hiroki Miura , Nagataka Tanaka , Keiji Mabuchi
发明人： Yoshiyuki Matsunaga , Shinji Ohsawa , Nobuo Nakamura , Hirofumi Yamashita , Hiroki Miura , Nagataka Tanaka , Keiji Mabuchi
IPC分类号： H01L27/14 , H01L27/146 , H04N5/335 , H04N5/357 , H04N5/361 , H04N5/363 , H04N5/369 , H04N5/374 , H04N5/3745 , H04N5/378 , H04N3/14 , H01L31/062
CPC分类号： H04N5/37457 , H01L27/14643 , H04N5/3651 , H04N5/3741
摘要： In an MOS-type solid-state imaging apparatus, plural unit cells are arranged in a two-dimensional matrix, unit cells in one horizontal line (row) are selected by a vertical address circuit, and vertical signal lines to which outputs from the unit cells in one vertical line (column) are supplied are selected by a horizontal address circuit, thereby sequentially outputting signals from the respective unit cells. Each unit cell includes an output circuit for outputting an output from a photodiode to a vertical signal line, photodiodes connected in parallel to the output circuit, and a selection switch for selecting one of the photodiodes and connecting it to the output circuit. The output circuit comprising an amplification transistor for amplifying an output from the photodiode, a selection transistor for selecting the unit cell, and a reset transistor for resetting the charge in the photodiode.
摘要翻译： 在MOS型固体摄像装置中，将多个单位电池配置为二维矩阵，通过垂直地址电路选择一条水平线（行）的单位电池，并将来自该单元的输出的垂直信号线 提供一条垂直线（列）中的单元由水平地址电路选择，从而顺序地输出来自各个单位单元的信号。 每个单位单元包括用于输出从光电二极管到垂直信号线的输出，与输出电路并联连接的光电二极管的输出电路和用于选择一个光电二极管并将其连接到输出电路的选择开关。 输出电路包括用于放大来自光电二极管的输出的放大晶体管，用于选择单元的选择晶体管，以及用于复位光电二极管中的电荷的复位晶体管。
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公开(公告)号：US20050012839A1
公开(公告)日：2005-01-20
申请号：US10916409
申请日：2004-08-12
IPC分类号： H01L27/146 , H04N5/335 , H04N5/357 , H04N5/361 , H04N5/363 , H04N5/369 , H04N5/374 , H04N5/3745 , H04N5/376 , H04N5/378
CPC分类号： H04N5/3658 , H01L27/14609 , H01L27/14643 , H04N5/3575 , H04N5/365 , H04N5/374 , H04N5/3745 , H04N5/378
摘要： An MOS-type solid-state imaging apparatus includes an imaging region formed by two-dimensionally arranging unit cells serving as photoelectric conversion portions on a semiconductor substrate, a plurality of vertical address lines arranged in a row direction of the imaging region to select a row of unit cells to be addressed, a plurality of vertical signal lines arranged in a column direction of the imaging region to read out signals from the unit cells in each column, a plurality of load transistors each connected to one end of each of the vertical signal lines, and a plurality of horizontal selection transistors each connected to the other end of each of the vertical signal lines. In this apparatus, each unit cell includes a photodiode serving as a photoelectric conversion portion, an amplification transistor having a gate to which an output from the photodiode is supplied, and a source and a drain respectively connected to the vertical signal line and the vertical address line, an address capacitor connected between the gate of the amplification transistor and the vertical address line, and a reset transistor connected in parallel with the address capacitor.
摘要翻译： MOS型固态成像装置包括：通过二维排列在半导体衬底上作为光电转换部分的单位单元形成的成像区域，沿着成像区域的行方向布置的多个垂直地址线，以选择行 要被寻址的单位单元，沿着成像区域的列方向布置的多条垂直信号线，以从每列中的单位单元读出信号;多个负载晶体管，每个连接到每个垂直信号的一端 线，以及多个水平选择晶体管，每个连接到每个垂直信号线的另一端。 在该装置中，每个单位单元包括用作光电转换部分的光电二极管，具有栅极的放大晶体管，来自光电二极管的输出端分别连接到垂直信号线和垂直地址的源极和漏极 连接在放大晶体管的栅极和垂直地址线之间的地址电容器，以及与地址电容器并联连接的复位晶体管。
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3.发明授权MOS-type solid-state imaging apparatus using a unit cell formed of a photoelectric converter, amplification transistor, address capacitor, and reset transistor 失效使用由光电转换器，放大晶体管，地址电容器和复位晶体管形成的单元的MOS型固体摄像装置公开(公告)号：US06239839B1
公开(公告)日：2001-05-29
申请号：US09022124
申请日：1998-02-11
IPC分类号： H04N5335
CPC分类号： H04N5/3658 , H01L27/14609 , H01L27/14643 , H04N5/3575 , H04N5/365 , H04N5/374 , H04N5/3745 , H04N5/378
摘要： An MOS-type solid-state imaging apparatus includes an imaging region formed by two-dimensionally arranging unit cells serving as photoelectric conversion portions on a semiconductor substrate, a plurality of vertical address lines arranged in a row direction of the imaging region to select a row of unit cells to be addressed, a plurality of vertical signal lines arranged in a column direction of the imaging region to read out signals from the unit cells in each column, a plurality of load transistors each connected to one end of each of the vertical signal lines, and a plurality of horizontal selection transistors each connected to the other end of each of the vertical signal lines. In this apparatus, each unit cell includes a photodiode serving as a photoelectric conversion portion, an amplification transistor having a gate to which an output from the photodiode is supplied, and a source and a drain respectively connected to the vertical signal line and the vertical address line, an address capacitor connected between the gate of the amplification transistor and the vertical address line, and a reset transistor connected in parallel with the address capacitor.
摘要翻译： MOS型固态成像装置包括：通过二维排列在半导体衬底上作为光电转换部分的单位单元形成的成像区域，沿着成像区域的行方向布置的多个垂直地址线，以选择行 要被寻址的单位单元，沿着成像区域的列方向布置的多条垂直信号线，以从每列中的单位单元读出信号;多个负载晶体管，每个连接到每个垂直信号的一端 线，以及多个水平选择晶体管，每个连接到每个垂直信号线的另一端。 在该装置中，每个单位单元包括用作光电转换部分的光电二极管，具有栅极的放大晶体管，来自光电二极管的输出端分别连接到垂直信号线和垂直地址的源极和漏极 连接在放大晶体管的栅极和垂直地址线之间的地址电容器，以及与地址电容器并联连接的复位晶体管。
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4.发明授权Image system, solid-state imaging semiconductor integrated circuit device used in the image system, and difference output method used for the image system 失效图像系统，图像系统中使用的固态成像半导体集成电路器件，以及用于图像系统的差分输出方法公开(公告)号：US07113213B2
公开(公告)日：2006-09-26
申请号：US09927632
申请日：2001-08-13
申请人： Yoshiyuki Matsunaga , Keiji Mabuchi , Shinji Ohsawa , Nobuo Nakamura , Hirofumi Yamashita , Hiroki Miura , Nagataka Tanaka
发明人： Yoshiyuki Matsunaga , Keiji Mabuchi , Shinji Ohsawa , Nobuo Nakamura , Hirofumi Yamashita , Hiroki Miura , Nagataka Tanaka
IPC分类号： H04N3/14
CPC分类号： H04N5/2173 , H01L27/14609 , H01L27/14643 , H01L27/14645 , H04N5/3575 , H04N5/365 , H04N5/3658 , H04N5/374 , H04N5/3745 , H04N5/37452 , H04N5/378
摘要： An image system uses an amplification-type MOS sensor for receiving an optical image through a photoelectric conversion element, converting the image into an electrical signal, and outputting the signal. This system includes an optical system for guiding this optical image to a predetermined position, an image processing means having a sensor for photoelectrically converting the optical image guided to the predetermined position by the optical system into an electrical signal in units of pixels, and a signal process device for processing an output from the image processing means, and outputting the resultant data. The sensor includes a photoelectric conversion element placed at the predetermined position, an output circuit having an amplification MOS transistor connected to the photoelectric conversion element and serving to amplify and output an output from the photoelectric conversion element at a first timing and output noise independent of the output from the photoelectric conversion element at a second timing, and a noise reduction circuit, connected to the output of the output circuit, having the same impedance at the first and second timings when viewed from the output circuit, and obtaining the difference between outputs from the output circuits at the first and second timings. By setting the same impedance, proper noise cancellation can be performed.
摘要翻译： 图像系统使用放大型MOS传感器，用于通过光电转换元件接收光学图像，将图像转换为电信号，并输出信号。 该系统包括用于将该光学图像引导到预定位置的光学系统，具有用于将由光学系统引导到预定位置的光学图像光电转换为以像素为单位的电信号的传感器的图像处理装置，以及信号 处理装置，用于处理来自图像处理装置的输出，并输出结果数据。 传感器包括放置在预定位置的光电转换元件，输出电路，其具有连接到光电转换元件的放大MOS晶体管，用于在第一定时放大并输出来自光电转换元件的输出，并且输出独立于 在第二定时从光电转换元件输出的噪声降低电路和连接到输出电路的输出的噪声降低电路，在从输出电路观察时在第一和第二定时具有相同的阻抗，并且获得来自 输出电路在第一和第二定时。 通过设置相同的阻抗，可以执行适当的噪声消除。
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公开(公告)号：US07369169B2
公开(公告)日：2008-05-06
申请号：US10916409
申请日：2004-08-12
IPC分类号： H04N5/335
CPC分类号： H04N5/3658 , H01L27/14609 , H01L27/14643 , H04N5/3575 , H04N5/365 , H04N5/374 , H04N5/3745 , H04N5/378
摘要： An MOS-type solid-state imaging apparatus includes an imaging region formed by two-dimensionally arranging unit cells serving as photoelectric conversion portions on a semiconductor substrate, a plurality of vertical address lines arranged in a row direction of the imaging region to select a row of unit cells to be addressed, a plurality of vertical signal lines arranged in a column direction of the imaging region to read out signals from the unit cells in each column, a plurality of load transistors each connected to one end of each of the vertical signal lines, and a plurality of horizontal selection transistors each connected to the other end of each of the vertical signal lines. In this apparatus, each unit cell includes a photodiode serving as a photoelectric conversion portion, an amplification transistor having a gate to which an output from the photodiode is supplied, and a source and a drain respectively connected to the vertical signal line and the vertical address line, an address capacitor connected between the gate of the amplification transistor and the vertical address line, and a reset transistor connected in parallel with the address capacitor.
摘要翻译： MOS型固态成像装置包括：通过二维排列在半导体衬底上作为光电转换部分的单位单元形成的成像区域，沿着成像区域的行方向布置的多个垂直地址线，以选择行 要被寻址的单位单元，沿着成像区域的列方向布置的多条垂直信号线，以从每列中的单位单元读出信号;多个负载晶体管，每个连接到每个垂直信号的一端 线，以及多个水平选择晶体管，每个连接到每个垂直信号线的另一端。 在该装置中，每个单位单元包括用作光电转换部分的光电二极管，具有栅极的放大晶体管，来自光电二极管的输出端分别连接到垂直信号线和垂直地址的源极和漏极 连接在放大晶体管的栅极和垂直地址线之间的地址电容器，以及与地址电容器并联连接的复位晶体管。
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公开(公告)号：US06795121B2
公开(公告)日：2004-09-21
申请号：US09733917
申请日：2000-12-12
IPC分类号： H04N5335
CPC分类号： H04N5/3658 , H01L27/14609 , H01L27/14643 , H04N5/3575 , H04N5/365 , H04N5/374 , H04N5/3745 , H04N5/378
摘要： An MOS-type solid-state imaging apparatus includes an imaging region formed by two-dimensionally arranging unit cells serving as photoelectric conversion portions on a semiconductor substrate, a plurality of vertical address lines arranged in a row direction of the imaging region to select a row of unit cells to be addressed, a plurality of vertical signal lines arranged in a column direction of the imaging region to read out signals from the unit cells in each column, a plurality of load transistors each connected to one end of each of the vertical signal lines, and a plurality of horizontal selection transistors each connected to the other end of each of the vertical signal lines. In this apparatus, each unit cell includes a photodiode serving as a photoelectric conversion portion, an amplification transistor having a gate to which an output from the photodiode is supplied, and a source and a drain respectively connected to the vertical signal line and the vertical address line, an address capacitor connected between the gate of the amplification transistor and the vertical address line, and a reset transistor connected in parallel with the address capacitor.
摘要翻译： MOS型固态成像装置包括：通过二维排列在半导体衬底上作为光电转换部分的单位单元形成的成像区域，沿着成像区域的行方向布置的多个垂直地址线，以选择行 要被寻址的单位单元，沿着成像区域的列方向布置的多条垂直信号线，以从每列中的单位单元读出信号;多个负载晶体管，每个连接到每个垂直信号的一端 线，以及多个水平选择晶体管，每个连接到每个垂直信号线的另一端。 在该装置中，每个单位单元包括用作光电转换部分的光电二极管，具有栅极的放大晶体管，来自光电二极管的输出端分别连接到垂直信号线和垂直地址的源极和漏极 连接在放大晶体管的栅极和垂直地址线之间的地址电容器，以及与地址电容器并联连接的复位晶体管。
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公开(公告)号：US06300978B1
公开(公告)日：2001-10-09
申请号：US09022038
申请日：1998-02-11
IPC分类号： H04N5217
CPC分类号： H04N5/3658 , H01L27/14643 , H04N5/3745 , H04N5/378
摘要： An MOS-type solid-state imaging apparatus includes unit cells arranged in a two-dimensional matrix, each unit cell being constituted by a photodiode, an amplification transistor having a gate to which an output from the photodiode is input, a vertical selection transistor connected in series with the amplification transistor, and a reset transistor connected between the drain and gate of the amplification transistor to discharge the signal from the photodiode, a plurality of vertical address lines connected to the gates of the vertical selection transistors and arranged in a row direction, a vertical address circuit for driving the vertical address lines, a plurality of vertical signal lines arranged in a column direction in which currents are read out from the amplification transistors, a plurality of load transistors each connected to one end of a corresponding one of the vertical signal lines, a plurality of horizontal selection transistors each connected to the other end of a corresponding one of the vertical signal lines, a horizontal address circuit for sequentially supplying selection pulse signals to the gates of the horizontal selection transistors, and a horizontal signal line for reading out signal currents from the vertical signal lines through the horizontal selection transistors.
摘要翻译： MOS型固态成像装置包括以二维矩阵布置的单位单元，每个单位单元由光电二极管构成，具有栅极的放大晶体管，输入来自光电二极管的输出端，垂直选择晶体管连接 与放大晶体管串联的复位晶体管，以及连接在放大晶体管的漏极和栅极之间以将来自光电二极管的信号放电的复位晶体管，连接到垂直选择晶体管的栅极并沿行方向布置的多个垂直地址线 ，用于驱动垂直地址线的垂直地址电路，沿着从放大晶体管读出电流的列方向排列的多个垂直信号线，多个负载晶体管，每个负载晶体管连接到相应的一个 垂直信号线，多个水平选择晶体管，每个连接到相应的另一端 在水平选择晶体管的栅极之间顺序地提供选择脉冲信号的水平地址电路和用于通过水平选择晶体管从垂直信号线读出信号电平的水平信号线。
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公开(公告)号：US06507365B1
公开(公告)日：2003-01-14
申请号：US09450749
申请日：1999-11-30
申请人： Nobuo Nakamura , Yoshitaka Egawa , Shinji Ohsawa , Yukio Endo , Yoshiyuki Matsunaga , Yoriko Tanaka , Fumio Izawa , Hiroki Miura , Ryohei Miyagawa , Ikuko Inoue , Tsuyoshi Arakawa , Yoshiyuki Tomizawa , Makoto Hoshino
发明人： Nobuo Nakamura , Yoshitaka Egawa , Shinji Ohsawa , Yukio Endo , Yoshiyuki Matsunaga , Yoriko Tanaka , Fumio Izawa , Hiroki Miura , Ryohei Miyagawa , Ikuko Inoue , Tsuyoshi Arakawa , Yoshiyuki Tomizawa , Makoto Hoshino
IPC分类号： H04N314
CPC分类号： H04N5/361 , H04N5/23274 , H04N5/2357 , H04N5/3452 , H04N5/3454 , H04N5/353 , H04N5/374
摘要： A solid-state imaging device with a variable (continuous) electronic shutter function comprises an imaging area where unit cells with photodiodes acting as pixels are arranged two-dimensionally, read lines for driving the read transistors in each pixel row, vertical selection lines for driving the vertical selection transistors in each pixel row, a vertical driving circuit for selectively driving vertical selection lines, vertical signal lines for outputting the signal from each unit cell in the pixel rows driven sequentially, and a row selection circuit for controlling the vertical driving circuit in such a manner that the vertical driving circuit drives the read transistors in each pixel row with the desired signal storage timing and signal read timing twice in that order and thereby drives the vertical selection transistors in the pixel row in synchronization with the signal read timing.
摘要翻译： 具有可变（连续）电子快门功能的固态成像装置包括成像区域，其中以二维作为像素的光电二极管的单位单元被二维布置，用于驱动每个像素行中的读取晶体管的读取线，用于驱动的垂直选择线 每个像素行中的垂直选择晶体管，用于选择性地驱动垂直选择线的垂直驱动电路，用于输出依次驱动的像素行中的每个单元的信号的垂直信号线和用于控制垂直驱动电路的行选择电路 垂直驱动电路以期望的信号存储定时和信号读取定时以该顺序驱动每个像素行中的读取晶体管，从而与信号读取定时同步地驱动像素行中的垂直选择晶体管。
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公开(公告)号：US5506429A
公开(公告)日：1996-04-09
申请号：US208750
申请日：1994-03-11
申请人： Nagataka Tanaka , Nobuo Nakamura , Yoshiyuki Matsunaga , Shinji Ohsawa , Michio Sasaki , Hirofumi Yamashita , Ryohei Miyagawa
发明人： Nagataka Tanaka , Nobuo Nakamura , Yoshiyuki Matsunaga , Shinji Ohsawa , Michio Sasaki , Hirofumi Yamashita , Ryohei Miyagawa
IPC分类号： H01L27/148 , H04N5/335 , H04N5/341 , H04N5/357 , H04N5/3728 , H01L29/765
CPC分类号： H01L27/14831
摘要： A CCD imager has an array of rows and columns of picture elements on a semiconductor substrate. A vertical charge transfer gate section extends in a first direction on the substrate to be associated with the columns. The transfer gate section includes CCD channels in the substrate, and insulated transfer gate electrodes overlying these CCD channels. A plurality of buffer electrodes are formed at a first level over the substrate surface to overlie the transfer gate electrodes. A plurality of shunt wires are formed at a second level over the substrate surface to overlie the buffer electrodes. The charge transfer gate electrodes and the buffer electrodes are connected with each other by first contact holes. The buffer electrodes and the shunt wires are coupled together by second contact holes. The second contact holes are distributed so that the repeat period thereof as defined at least in a second direction transverse to the first direction on the substrate is equal to or less than two picture elements, whereby their spatial frequency at least in the second direction is half the sampling frequency of photoconversion in the CCD imager, or more.
摘要翻译： CCD成像器在半导体衬底上具有一列行和列的像素。 垂直电荷转移栅极部分在衬底上的第一方向上延伸以与柱相关联。 传输门部分包括衬底中的CCD通道，以及覆盖这些CCD通道的绝缘传输栅电极。 多个缓冲电极形成在衬底表面上的第一层上以覆盖传输栅电极。 在衬底表面上的第二层上形成多个分流电线以覆盖缓冲电极。 电荷转移栅电极和缓冲电极通过第一接触孔相互连接。 缓冲电极和并联线通过第二接触孔耦合在一起。 分布第二接触孔，使得其至少沿与衬底上的第一方向横切的第二方向限定的重复周期等于或小于两个图像元素，由此其至少在第二方向上的空间频率为一半 CCD成像仪中光电转换的采样频率，或更多。
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10.发明授权Solid-state image device including charge-coupled devices having improved electrode structure 失效固态图像器件包括具有改进的电极结构的电荷耦合器件
公开(公告)号：US5428231A
公开(公告)日：1995-06-27
申请号：US269349
申请日：1994-06-30
IPC分类号： H01L21/28 , H01L27/148 , H01L29/423 , H01L29/78 , H01L27/14 , H01L31/00
CPC分类号： H01L29/42396 , H01L27/14831
摘要： A solid-state imaging device comprises a plurality of photoelectric conversion accumulation sections arranged two-dimensionally on a semiconductor substrate, a plurality of vertical CCDs for vertically transferring signal charges read out from the photoelectric conversion accumulation sections, and a horizontal CCD for receiving and horizontally transferring the signal charges transferred by the vertical CCDs. A gap between transfer electrodes of the horizontal CCD is less than a gap between transfer electrodes of the vertical CCDs. The transfer electrodes of the vertical CCDs have a single-layer electrode structure formed by patterning a first polysilicon film. The transfer electrodes of the horizontal CCD have an overlapping double-layer electrode structure comprising alternately arranged electrodes formed by patterning the first polysilicon film and electrodes intervening between the alternately arranged electrodes which are formed by patterning a second polysilicon film. The gap between the electrodes of the horizontal CCD is determined by a silicon oxide film obtained by subjecting the alternately arranged electrodes of the first polysilicon film to thermal oxidation.
摘要翻译： 固态成像装置包括在半导体基板上二维布置的多个光电转换累积部分，用于垂直转移从光电转换累积部分读出的信号电荷的多个垂直CCD以及用于接收和水平的水平CCD 传输由垂直CCD传输的信号电荷。 水平CCD的转印电极之间的间隙小于垂直CCD的转印电极之间的间隙。 垂直CCD的转印电极具有通过图案化第一多晶硅膜形成的单层电极结构。 水平CCD的转移电极具有重叠的双层电极结构，其包括交替排列的电极，其通过对第一多晶硅膜进行构图而形成，并且通过图案化第二多晶硅膜而形成交替排列的电极之间的电极。 水平CCD的电极之间的间隙由通过对第一多晶硅膜的交替排列的电极进行热氧化而获得的氧化硅膜确定。
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