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    Fused silica glass crucible
    91.
    发明授权
    Fused silica glass crucible 失效
    熔融石英玻璃坩埚

    公开(公告)号：US5730800A

    公开(公告)日：1998-03-24

    申请号：US768282

    申请日：1996-12-17

    Applicant: Wataru Sato ,  Masahiro Sakurada ,  Ohta Tomohiko ,  Katsuhiko Kemmochi

    Inventor： Wataru Sato ,  Masahiro Sakurada ,  Ohta Tomohiko ,  Katsuhiko Kemmochi

    IPC: C03C3/06 ,  C30B15/00 ,  C30B15/10 ,  C30B35/00

    CPC classification number: C30B29/06 ,  C03C3/06 ,  C30B15/10 ,  C30B35/002 ,  C03C2201/30 ,  C03C2201/32

    Abstract: An improved method is proposed for the preparation of a semiconductor silicon single crystal of N-type by the Czochralski process, which is free from the problem of occurrence of delayed OSFs as defects in the single crystal even after prolonged storage at room temperature based on the discovery that presence of a certain amount of aluminum in the melt of silicon contained in a fused silica glass crucible acts to suppress occurrence of delayed OSFs as a type of defects in the single crystal while copper as an impurity acts adversely in this regard. With a known fact that an about 30 .mu.m thick inner surface layer of the crucible is melted down into the silicon melt during the single crystal pulling-up process, namely, the invention proposes use of a crucible of which the inner surface layer of 30 .mu.m thickness contains aluminum in an average concentration of 40 to 500 ppm by weight while the content of copper is as low as possible not to exceed 0.5 ppb by weight. Alternatively, when the fused silica glass crucible is deficient in the content of aluminum, an amount of aluminum is introduced as a dopant into the melt of silicon in the crucible to supplement the content of aluminum in order to be sufficient to suppress delayed OSFs.

    Abstract translation: 提出了一种通过Czochralski工艺制备N型半导体硅单晶的改进方法，其即使在室温下长时间储存​​之后也不会出现延迟OSF作为单晶的缺陷的问题，基于 发现在熔融石英玻璃坩埚中含有的硅熔体中存在一定量的铝作为抑制作为单晶中的缺陷的延迟OSF的发生，而作为杂质的铜在这方面起不利影响。 在已知的事实中，在单晶提拉过程中坩埚的内表面层约30μm的内表面层熔化成硅熔体，即本发明提出使用内表面层为30的坩埚 平均浓度为40〜500ppm的铝，而铜的含量尽可能低，不超过0.5ppb（重量）。 或者，当熔融石英玻璃坩埚的铝含量不足时，将铝的量作为掺杂剂引入到坩埚中的硅熔体中，以补充铝的含量，以足以抑制延迟的OSF。

    Method for the preparation of silicon single crystal
    94.
    发明授权
    Method for the preparation of silicon single crystal 失效
    硅单晶的制备方法

    公开(公告)号：US5609682A

    公开(公告)日：1997-03-11

    申请号：US498894

    申请日：1995-07-06

    Applicant: Wataru Sato ,  Masahiro Sakurada ,  Ohta Tomohiko ,  Katsuhiko Kemmochi

    Inventor： Wataru Sato ,  Masahiro Sakurada ,  Ohta Tomohiko ,  Katsuhiko Kemmochi

    IPC: C03C3/06 ,  C30B15/00 ,  C30B15/10 ,  C30B35/00

    CPC classification number: C30B29/06 ,  C03C3/06 ,  C30B15/10 ,  C30B35/002 ,  C03C2201/30 ,  C03C2201/32

    Abstract: An improved method is proposed for the preparation of a semiconductor silicon single crystal of N-type by the Czochralski process, which is free from the problem of occurrence of delayed OSFs as defects in the single crystal even after prolonged storage at room temperature based on the discovery that presence of a certain amount of aluminum in the melt of silicon contained in a fused silica glass crucible acts to suppress occurrence of delayed OSFs as a type of defects in the single crystal while copper as an impurity acts adversely in this regard. With a known fact that an about 30 .mu.m thick inner surface layer of the crucible is melted down into the silicon melt during the single crystal pulling-up process, namely, the invention proposes use of a crucible of which the inner surface layer of 30 .mu.m thickness contains aluminum in an average concentration of 40 to 500 ppm by weight while the content of copper is as low as possible not to exceed 0.5 ppb by weight. Alternatively, when the fused silica glass crucible is deficient in the content of aluminum, an amount of aluminum is introduced as a dopant into the melt of silicon in the crucible to supplement the content of aluminum in order to be sufficient to suppress delayed OSFs.

    Abstract translation: 提出了一种通过Czochralski工艺制备N型半导体硅单晶的改进方法，其即使在室温下长时间储存​​之后也不会出现延迟OSF作为单晶的缺陷的问题，基于 发现在熔融石英玻璃坩埚中含有的硅熔体中存在一定量的铝作为抑制作为单晶中的缺陷的延迟OSF的发生，而作为杂质的铜在这方面起不利影响。 在已知的事实中，在单晶提拉过程中坩埚的内表面层约30μm的内表面层熔化成硅熔体，即本发明提出使用内表面层为30的坩埚 平均浓度为40〜500ppm的铝，而铜的含量尽可能低，不超过0.5ppb（重量）。 或者，当熔融石英玻璃坩埚的铝含量不足时，将铝的量作为掺杂剂引入到坩埚中的硅熔体中，以补充铝的含量，以足以抑制延迟的OSF。

    Yellow high silica glass
    95.
    发明授权
    Yellow high silica glass 失效
    黄色高硅胶玻璃

    公开(公告)号：US5248638A

    公开(公告)日：1993-09-28

    申请号：US863002

    申请日：1992-04-06

    Applicant: Thomas H. Elmer ,  Sheryl L. Hultman

    Inventor： Thomas H. Elmer ,  Sheryl L. Hultman

    IPC: C03C3/06 ,  C03C23/00

    CPC classification number: C03C23/0095 ,  C03C3/06 ,  C03C2201/32 ,  C03C2201/40

    Abstract: A yellow color by transmitted light is produced in a high silica glass by impregnating a porous, high silica glass with a solution of chromium and zinc salts and consolidating the glass under oxidizing conditions to dope the glass with chromium and zinc oxides, the chromium being predominantly in the hexavalent state. Optionally, an aluminum salt is included in the impregnating solution. The glass has particular utility as a filter for lighting purposes.

    Abstract translation: 通过在高二氧化硅玻璃中通过用铬和锌盐溶液浸渍多孔高硅石玻璃并在氧化条件下固化玻璃以用铬和锌氧化物掺杂玻璃来产生黄色的颜色，铬主要是 在六价状态。 任选地，浸渍溶液中包含铝盐。 该玻璃具有用作照明用途的过滤器的特殊用途。

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