公开(公告)号：US20190157134A1

公开(公告)日：2019-05-23

申请号：US16259175

申请日：2019-01-28

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Ludovic Godet ,  Rui Cheng ,  Erica Chen ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/762 ,  H01L21/02 ,  H01L23/31 ,  H01L21/768 ,  H01L29/06

CPC classification number: H01L21/76224 ,  H01L21/02123 ,  H01L21/76283 ,  H01L21/76286 ,  H01L21/76837 ,  H01L23/3178 ,  H01L29/0649

Abstract: Methods for seam-less gapfill comprising sequentially depositing a film with a seam, reducing the height of the film to remove the seam and repeating until a seam-less film is formed. Some embodiments include optional film doping and film treatment (e.g., ion implantation and annealing).

公开(公告)号：US20170271196A1

公开(公告)日：2017-09-21

申请号：US15461847

申请日：2017-03-17

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Ludovic Godet ,  Rui Cheng ,  Erica Chen ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/762 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L21/76224 ,  H01L21/02123 ,  H01L21/76283 ,  H01L21/76286 ,  H01L21/76837 ,  H01L23/3178 ,  H01L29/0649

Abstract: Methods for seam-less gapfill comprising sequentially depositing a film with a seam, reducing the height of the film to remove the seam and repeating until a seam-less film is formed. Some embodiments include optional film doping and film treatment (e.g., ion implantation and annealing).

公开(公告)号：US20170207087A1

公开(公告)日：2017-07-20

申请号：US15406116

申请日：2017-01-13

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Pramit Manna ,  Rui Cheng ,  Abhijit Basu Mallick

IPC: H01L21/033 ,  H01L21/02

Abstract: Methods of forming a tungsten film comprising forming a boron seed layer on an oxide surface, an optional tungsten initiation layer on the boron seed layer and a tungsten containing film on the boron seed layer or tungsten initiation layer are described. Film stack comprising a boron seed layer on an oxide surface with an optional tungsten initiation layer and a tungsten containing film are also described.