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    Method and apparatus capable of producing FM halftone dots in high speed
    101.
    发明授权
    Method and apparatus capable of producing FM halftone dots in high speed 有权
    能够高速生产FM半色调点的方法和装置

    公开(公告)号：US08363278B2

    公开(公告)日：2013-01-29

    申请号：US11918077

    申请日：2006-03-31

    Applicant: Zhihong Liu ,  Feng Chen ,  Bin Yang

    Inventor： Zhihong Liu ,  Feng Chen ,  Bin Yang

    IPC: G06K15/00 ,  G06K9/00 ,  G03G13/04

    CPC classification number: H04N1/4052

    Abstract: The present invention relates to a method and apparatus capable of generating frequency-modulation halftone dots in high speed and belongs to the field of the digital image halftone. In the prior art, read-write operation is usually carried out many times in error rows during processing each pixel so that halftone dots are generated in low speed. In the method according to the present invention, the error generated by the current pixel is buffered in a register file and the final accumulated error values are written in the error rows only after all of the relative pixels are processed. Thus, read-write operation is carried out only once in the error rows for processing each pixel. The present invention also provides an apparatus to implement the method. The apparatus comprises an error row memory, an error buffer register file, a gray generation circuit, a threshold comparison circuit, an error generation circuit, an error buffer register file control circuit, and an error row control circuit. The method and apparatus according to the present invention decrease the steps in operation and improve the speed for generating the frequency-modulation halftone dots.

    Abstract translation: 本发明涉及能够高速产生调频半色调点的属于数字图像半色调的领域的方法和装置。 在现有技术中，在处理每个像素期间，读写操作通常在错误行中进行多次，使得半色调点以低速生成。 在根据本发明的方法中，由当前像素产生的误差被缓存在寄存器文件中，并且只有在处理了所有相对像素之后才将最终的累积误差值写入误差行。 因此，在用于处理每个像素的错误行中仅执行一次读写操作。 本发明还提供了一种实现该方法的装置。 该装置包括错误行存储器，错误缓冲寄存器文件，灰色生成电路，阈值比较电路，错误产生电路，错误缓冲寄存器文件控制电路和错误行控制电路。 根据本发明的方法和装置降低了操作步骤，提高了生成调频半色调点的速度。

    METHOD TO FORM UNIFORM SILICIDE BY SELECTIVE IMPLANTATION
    102.
    发明申请
    METHOD TO FORM UNIFORM SILICIDE BY SELECTIVE IMPLANTATION 有权
    通过选择性植入形成均匀硅酮的方法

    公开(公告)号：US20130020705A1

    公开(公告)日：2013-01-24

    申请号：US13186519

    申请日：2011-07-20

    Applicant: Emre Alptekin ,  Viraj Y. Sardesai ,  Cung D. Tran ,  Bin Yang

    Inventor： Emre Alptekin ,  Viraj Y. Sardesai ,  Cung D. Tran ,  Bin Yang

    IPC: H01L21/28 ,  H01L23/50

    CPC classification number: H01L23/485 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26566 ,  H01L21/2658 ,  H01L21/26586 ,  H01L21/28518 ,  H01L21/76814 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Methods form an integrated circuit structure by forming at least a portion of a plurality of devices within and/or on a substrate and patterning trenches in an inter-layer dielectric layer on the substrate adjacent the devices. The patterning forms relatively narrow trenches and relatively wide trenches. The methods then perform an angled implant of a compensating material into the trenches. The angle of the angled implant implants a greater concentration of the compensating material in the regions of the substrate at the bottom of the wider trenches relative to an amount of compensating material implanted in the regions of the substrate at the bottom of the narrower trenches. The methods then deposit a metallic material within the trenches and heat the metallic material to form silicide from the metallic material.

    Abstract translation: 方法通过在衬底内和/或衬底上形成多个器件的至少一部分形成集成电路结构，并且在邻近器件的衬底上的层间电介质层中图案化沟槽。 图案形成相对较窄的沟槽和较宽的沟槽。 然后，所述方法对沟槽进行补偿材料的成角度注入。 成角度的植入物的角度相对于在较窄沟槽的底部注入衬底的区域中的补偿材料的量，在较宽沟槽底部的衬底区域中植入更大浓度的补偿材料。 然后，该方法将金属材料沉积在沟槽内，并加热金属材料以从金属材料形成硅化物。

    Display system with first controller providing analog image signal from size regulator to display device when the first controller determining that the display device is an analog display device working in a mode for displaying moving pictures and related display method
    103.
    发明授权
    Display system with first controller providing analog image signal from size regulator to display device when the first controller determining that the display device is an analog display device working in a mode for displaying moving pictures and related display method 有权
    具有第一控制器的显示系统，当第一控制器确定显示设备是以用于显示运动图像的模式工作的模拟显示设备和相关显示方法时，从尺寸调节器向显示设备提供模拟图像信号

    公开(公告)号：US08274498B2

    公开(公告)日：2012-09-25

    申请号：US11982870

    申请日：2007-11-05

    Applicant: Gang-Qiang Zheng ,  Bin Yang

    Inventor： Gang-Qiang Zheng ,  Bin Yang

    IPC: G09G5/00

    CPC classification number: H04N5/2628 ,  H04N2101/00

    Abstract: An exemplary display system (2) includes a display device (23), an image sensor (20), and a microprocessor unit (21). The image sensor includes an image sensor unit (24) and a digital signal processor unit (22) integrated therein. The image sensor unit is configured for generating a current. The digital signal processor includes a size regulator (221) configured for receiving the current, generating an analog image signal according to the current, and providing the analog image signal to the display device. The microprocessor unit is configured for initializing the image sensor unit.

    Abstract translation: 示例性显示系统（2）包括显示设备（23），图像传感器（20）和微处理器单元（21）。 图像传感器包括集成在其中的图像传感器单元（24）和数字信号处理器单元（22）。 图像传感器单元被配置为产生电流。 数字信号处理器包括：尺寸调节器（221），被配置为接收电流，根据电流产生模拟图像信号，并将模拟图像信号提供给显示装置。 微处理器单元被配置为初始化图像传感器单元。

    Metal-Semiconductor Intermixed Regions
    104.
    发明申请
    Metal-Semiconductor Intermixed Regions 有权

    公开(公告)号：US20120190192A1

    公开(公告)日：2012-07-26

    申请号：US13012043

    申请日：2011-01-24

    Applicant: Christian Lavoie ,  Tak H. Ning ,  Ahmet S. Ozcan ,  Bin Yang ,  Zhen Zhang

    Inventor： Christian Lavoie ,  Tak H. Ning ,  Ahmet S. Ozcan ,  Bin Yang ,  Zhen Zhang

    IPC: H01L21/44

    CPC classification number: H01L21/28518

    Abstract: In one exemplary embodiment, a program storage device readable by a machine, tangibly embodying a program of instructions executable by the machine for performing operations, said operations including: depositing a first layer having a first metal on a surface of a semiconductor structure, where depositing the first layer creates a first intermix region at an interface of the first layer and the semiconductor structure; removing a portion of the deposited first layer to expose the first intermix region; depositing a second layer having a second metal on the first intermix region, where depositing the second layer creates a second intermix region at an interface of the second layer and the first intermix region; removing a portion of the deposited second layer to expose the second intermix region; and performing at least one anneal on the semiconductor structure.

    METHOD TO CONTROL METAL SEMICONDUCTOR MICRO-STRUCTURE
    105.
    发明申请
    METHOD TO CONTROL METAL SEMICONDUCTOR MICRO-STRUCTURE 有权
    控制金属半导体微结构的方法

    公开(公告)号：US20120181697A1

    公开(公告)日：2012-07-19

    申请号：US13006664

    申请日：2011-01-14

    Applicant: Christian Lavoie ,  Ahmet S. Ozcan ,  Zhen Zhang ,  Bin Yang

    Inventor： Christian Lavoie ,  Ahmet S. Ozcan ,  Zhen Zhang ,  Bin Yang

    IPC: H01L23/532 ,  H01L21/768

    CPC classification number: H01L21/768 ,  H01L21/28518 ,  H01L23/485 ,  H01L29/456 ,  H01L29/66545 ,  H01L29/66575 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method of forming a metal semiconductor alloy that includes forming an intermixed metal semiconductor region to a first depth of a semiconductor substrate without thermal diffusion. The intermixed metal semiconductor region is annealed to form a textured metal semiconductor alloy. A second metal layer is formed on the textured metal semiconductor alloy. The second metal layer on the textured metal semiconductor alloy is then annealed to form a metal semiconductor alloy contact, in which metal elements from the second metal layer are diffused through the textured metal semiconductor alloy to provide a templated metal semiconductor alloy. The templated metal semiconductor alloy includes a grain size that is greater than 2× for the metal semiconductor alloy, which has a thickness ranging from 15 nm to 50 nm.

    Abstract translation: 一种形成金属半导体合金的方法，其包括在半导体衬底的第一深度上形成混合金属半导体区域而没有热扩散。 将混合后的金属半导体区域退火以形成织构化的金属半导体合金。 在纹理金属半导体合金上形成第二金属层。 纹理金属半导体合金上的第二金属层然后退火以形成金属半导体合金接触，其中来自第二金属层的金属元素通过织构化金属半导体合金扩散以提供模板化的金属半导体合金。 模板化金属半导体合金的厚度范围为15nm〜50nm的金属半导体合金的晶粒尺寸大于2×。

    SOI Schottky Source/Drain Device Structure to Control Encroachment and Delamination of Silicide
    108.
    发明申请
    SOI Schottky Source/Drain Device Structure to Control Encroachment and Delamination of Silicide 失效
    SOI肖特基源/排水装置结构，以控制硅化物的侵蚀和分层

    公开(公告)号：US20110227156A1

    公开(公告)日：2011-09-22

    申请号：US12726789

    申请日：2010-03-18

    Applicant: Marwan H. Khater ,  Christian Lavoie ,  Bin Yang ,  Zhen Zhang

    Inventor： Marwan H. Khater ,  Christian Lavoie ,  Bin Yang ,  Zhen Zhang

    IPC: H01L27/12

    CPC classification number: H01L29/78654 ,  H01L29/7839

    Abstract: A Schottky field effect transistor is provided that includes a substrate having a layer of semiconductor material atop a dielectric layer, wherein the layer of semiconductor material has a thickness of less than 10.0 nm. A gate structure is present on the layer of semiconductor material. Raised source and drain regions comprised of a metal semiconductor alloy are present on the layer of semiconductor material on opposing sides of the gate structure. The raised source and drain regions are Schottky source and drain regions. In one embodiment, a first portion of the Schottky source and drain regions that is adjacent to a channel region of the Schottky field effect transistor contacts the dielectric layer, and a non-reacted semiconductor material is present between a second portion of the Schottky source and drain regions and the dielectric layer.

    Abstract translation: 提供一种肖特基场效应晶体管，其包括在电介质层顶上具有半导体材料层的衬底，其中半导体材料层的厚度小于10.0nm。 栅极结构存在于半导体材料层上。 在栅极结构的相对侧的半导体材料层上存在由金属半导体合金构成的凸起的源极和漏极区域。 凸起的源极和漏极区域是肖特基源极和漏极区域。 在一个实施例中，与肖特基场效应晶体管的沟道区相邻的肖特基源极和漏极区的第一部分接触电介质层，并且未反应的半导体材料存在于肖特基源的第二部分和 漏区和电介质层。

    NMOS ARCHITECTURE INVOLVING EPITAXIALLY-GROWN IN-SITU N-TYPE-DOPED EMBEDDED eSiGe:C SOURCE/DRAIN TARGETING
    110.
    发明申请
    NMOS ARCHITECTURE INVOLVING EPITAXIALLY-GROWN IN-SITU N-TYPE-DOPED EMBEDDED eSiGe:C SOURCE/DRAIN TARGETING 有权
    涉及外延生长的N型掺杂嵌入式的NMOS结构eSiGe：C源/漏极区

    公开(公告)号：US20110133189A1

    公开(公告)日：2011-06-09

    申请号：US12632351

    申请日：2009-12-07

    Applicant: Bin Yang ,  Bo Bai

    Inventor： Bin Yang ,  Bo Bai

    IPC: H01L29/772 ,  H01L21/20

    CPC classification number: H01L29/7848 ,  H01L29/165 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/7833

    Abstract: An NMOS transistor is formed with improved manufacturability. An embodiment includes forming N-type doped embedded silicon germanium containing carbon (eSiGe:C) in source/drain regions of a substrate, and amorphizing the eSiGe:C. The use of eSiGe:C provides a reduction in extension silicon and dopant loss, improved morphology, increased wafer throughput, improved short channel control, and reduced silicide to source/drain contact resistance.

    Abstract translation: 形成具有改进的可制造性的NMOS晶体管。 实施例包括在衬底的源极/漏极区域中形成含有N型掺杂的含硅锗（eSiGe：C），并使eSiGe：C非晶化。 eSiGe：C的使用提供了延长硅和掺杂剂损耗的减少，改进的形态，增加的晶片产量，改进的短沟道控制以及降低的硅化物到源/漏接触电阻。

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