EVALUATING PRINT NOZZLE CONDITION
    102.
    发明申请
    EVALUATING PRINT NOZZLE CONDITION 审中-公开
    评估打印喷嘴条件

    公开(公告)号:US20170001433A1

    公开(公告)日:2017-01-05

    申请号:US15114938

    申请日:2014-01-30

    Abstract: Systems and methods for evaluating the condition of a print nozzle are described. In one example, impedances across the print nozzle are measured. Subsequently, first test result and second test result are determined and registered at a first predetermined time instant and at a second predetermined time instant, respectively. The first test result and the second test result are obtained based on the measured impedances. Based on the first test result and the second test result, the condition of the print nozzle, is determined.

    Abstract translation: 描述了用于评估打印喷嘴条件的系统和方法。 在一个示例中,测量打印喷嘴两端的阻抗。 随后,分别在第一预定时刻和第二预定时刻确定并登记第一测试结果和第二测试结果。 基于测量的阻抗获得第一测试结果和第二测试结果。 基于第一测试结果和第二测试结果,确定打印喷嘴的状态。

    Mitigating parasitic current while programming a floating gate memory array
    103.
    发明授权
    Mitigating parasitic current while programming a floating gate memory array 有权
    在编程浮动栅极存储器阵列时减轻寄生电流

    公开(公告)号:US09472288B2

    公开(公告)日:2016-10-18

    申请号:US14527466

    申请日:2014-10-29

    Abstract: Methods to program a floating gate memory array include, in response to a request to program a second bit of the floating gate memory array, at a first time, outputting a programming voltage to cause a first node voltage at a first source of a first transistor corresponding to a first bit, wherein the first node voltage is greater than a second node voltage at a second source of a second transistor corresponding to the second bit. The method further includes at a second time, increasing the programming voltage of the floating gate memory array to program the second bit of the floating gate memory array.

    Abstract translation: 编程浮动栅极存储器阵列的方法包括响应于对浮置栅极存储器阵列的第二位进行编程的请求,在第一时间输出编程电压以使第一晶体管的第一源处的第一节点电压 对应于第一位,其中第一节点电压大于对应于第二位的第二晶体管的第二源处的第二节点电压。 该方法还包括第二时间,增加浮动栅极存储器阵列的编程电压以对浮动栅极存储器阵列的第二位进行编程。

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