公开(公告)号：US11015991B2

公开(公告)日：2021-05-25

申请号：US16219012

申请日：2018-12-13

Applicant: INTEL CORPORATION

Inventor： Khaled Ahmed ,  Michael Rosenzweig

IPC: G01L1/20 ,  G06F1/16 ,  G01L5/165

Abstract: Disclosed herein are flexible display panels and bend detection circuits for flexible display panels where the bend detection circuit can be formed on a flexible substrate of the flexible display panel stack. The bend detection circuit including a number of sensor elements arranged to change an electric response to an applied electric signal based on an applied physical force. The bend detection circuits also including a bend sensing circuit arranged to measure a time delay of the number of sensor elements to the applied electric signal.

公开(公告)号：US20210104650A1

公开(公告)日：2021-04-08

申请号：US16946222

申请日：2020-06-10

Applicant: Intel Corporation

Inventor： Khaled Ahmed ,  Thomas L. Sounart

IPC: H01L33/62 ,  C09K13/04 ,  C09K13/06 ,  C09K13/08 ,  B24B7/22 ,  H01L25/075 ,  H01L27/12

Abstract: An semiconductor manufacturing apparatus and method to smooth surfaces of discrete pads on a substrate. The method includes placing a surface of one of the discrete pads in registration with a first chamber of a set of chambers of a smoothing tool, the set corresponding to a smoothing cycle of the smoothing tool; etching, within the first chamber, a surface of one of the discrete pads to form an etch layer on the surface; placing the surface in registration with a second chamber of the set; after the etch, pumping gas and vapor from the surface within the second chamber; placing the surface in registration with a third chamber of the set; and applying heating to the surface in the third chamber to smooth the surface.

公开(公告)号：US10965917B2

公开(公告)日：2021-03-30

申请号：US16164872

申请日：2018-10-19

Applicant: Intel Corporation

Inventor： Khaled Ahmed ,  Richmond Hicks ,  Nilesh V. Shah

IPC: H04N9/09 ,  H01L27/146 ,  H04N9/097 ,  H04N5/232 ,  H04N5/235 ,  H04N5/265 ,  H04N5/33

Abstract: Imaging systems providing high resolution, low light images with significant dynamic range are disclosed. The improvements to photo imaging sensors providing low costs and yet higher performance sensors may be obtained an enhanced photosensor generating a single color channel image per photosensor. The single color channel image contains luminence values corresponding to light focused onto the photosensor. The plurality of photosensors are constructed using Indium gallium nitride (InGaN) nanowire structures and nanopyrimid structures used in cells within an array of cells. Photosensors may be constructed as single color imaging devices as well as multi-color devices. The generation of various color channel images are controlled using metasurface filter structures as well as color filter layers setting a wavelength for absorbed light by controlling a concentration of indium gallium nitride (InGaN) within the color filter layers.

公开(公告)号：US20200350360A1

公开(公告)日：2020-11-05

申请号：US16878130

申请日：2020-05-19

Applicant: Intel Corporation

Inventor： Khaled Ahmed ,  Kunjal Parikh ,  Peter L. Chang

IPC: H01L27/15 ,  H01L33/00

Abstract: A micro-light emitting diode (LED) display panel and a method of forming the display panel, the micro-LED display panel having a monolithically grown micro-structure including a first color micro-LED that is a first color nanowire LED, and a second color micro-LED that is a second color nanowire LED.

公开(公告)号：US20200303586A1

公开(公告)日：2020-09-24

申请号：US16946224

申请日：2020-06-10

Applicant: Intel Corporation

Inventor： Khaled Ahmed

IPC: H01L33/06 ,  H01L25/075 ,  H01L27/12 ,  H01L33/22 ,  H01L33/32 ,  H01L33/00

Abstract: A micro-light emitting diode (LED) pixel element and a method of fabricating the same. The pixel element includes a mask layer and a N-type core partially in an opening of the mask layer; a quantum well structure on the N-type core including at least one quantum well, each quantum well including an active layer, and at least two barrier layers including a first barrier layer and a second barrier layer, and a P-cladding layer on the quantum well structure. The active layer includes at least one of AlInN, InGaN, InGaNY or InGaNSc. The at least two barrier layers include: GaScN, wherein the active layer is in contact with and between the first barrier layer and the second barrier layer; or a GaN-based material, wherein the first barrier layer includes GaN, and is in contact with a surface of the active layer facing away from the N-type core, and the second barrier layer is a cap layer that includes at least one of AlGaN or ScGaN, and is in contact with a surface of the first barrier layer facing away from the N-type core. The cap layer is grown using pulse metalorganic chemical vapor deposition at a temperature below 600 degrees Celsius.

公开(公告)号：US10734528B2

公开(公告)日：2020-08-04

申请号：US16550945

申请日：2019-08-26

Applicant: INTEL CORPORATION

Inventor： Khaled Ahmed ,  Dong Yeung Kwak ,  Ramon C. Cancel Olmo

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L21/02 ,  G09G3/3233

Abstract: A display panel with reduced power consumption is described. An example of the display panel includes an array of light emitting elements that are controllable to form an image, and a Thin-Film-Transistor (TFT) backplane comprising circuitry to drive the array of light emitting elements. The TFT backplane includes a plurality of field effect transistors (FETs). Each FET includes a source electrode, a drain electrode, a channel layer contacting the source electrode and the drain electrode, and a gate electrode adjacent to the channel layer and separated from the channel layer by an insulator. The channel layer includes a layer of metal phosphide.

公开(公告)号：US10658422B2

公开(公告)日：2020-05-19

申请号：US16233787

申请日：2018-12-27

Applicant: Intel Corporation

Inventor： Khaled Ahmed ,  Kunjal Parikh ,  Peter L. Chang

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/18

Abstract: A micro-light emitting diode (LED) display panel and a method of forming the display panel, the micro-LED display panel having a monolithically grown micro-structure including a first color micro-LED that is a first color nanowire LED, and a second color micro-LED that is a second color nanowire LED.

公开(公告)号：US10510974B2

公开(公告)日：2019-12-17

申请号：US16239193

申请日：2019-01-03

Applicant: Intel Corporation

Inventor： Khaled Ahmed ,  Ali Khakifirooz ,  Richmond Hicks

IPC: H01L51/50 ,  H01L33/20 ,  H01L27/32 ,  H01L51/56 ,  H01L33/24 ,  H01S5/183 ,  G02B27/01 ,  G06F3/01 ,  G02B27/10 ,  G02B6/35 ,  G02B6/27 ,  H01L51/52 ,  G02B27/18 ,  H01S5/40 ,  H01S5/343 ,  H01L33/40

Abstract: Embodiments related to emissive devices for displays are discussed. Some embodiments include light emitting diodes including an electron transport layer core having a tube shape with an inner and an outer sidewall, an emission layer on the inner and outer sidewalls, and a hole transport layer on the emission layer, displays and systems including such light emitting diodes, and methods for fabricating them. Other embodiments include emissive laser devices having an emission layer between a hole transport layer and an electron transport layer and first and second metasurface mirrors adjacent to the hole transport layer and the electron transport layer, respectively, displays and systems including such emissive laser devices, and methods for fabricating them.

公开(公告)号：US10439101B2

公开(公告)日：2019-10-08

申请号：US15681247

申请日：2017-08-18

Applicant: Intel Corporation

Inventor： Khaled Ahmed ,  Anup Pancholi ,  Ali Khakifirooz

IPC: H01L33/02 ,  H01L33/38 ,  H01L33/06 ,  H01L33/04 ,  H01L33/24 ,  H01L27/15 ,  H01L33/18 ,  H01L33/32 ,  H01L25/075 ,  H01L33/56

Abstract: Micro light-emitting diode (LED) displays and assembly apparatuses are described. In an example, a pixel element for a micro-light emitting diode (LED) display panel includes a first color nanowire LED, a second color nanowire LED, the second color different than the first color, and a pair of third color nanowire LEDs, the third color different than the first and second colors. A continuous insulating material layer ius laterally surrounding the first color nanowire LED, the second color nanowire LED, and the pair of third color nanowire LEDs.

公开(公告)号：US20190305416A1

公开(公告)日：2019-10-03

申请号：US15941304

申请日：2018-03-30

Applicant: Intel Corporation

Inventor： Khaled Ahmed ,  Shengbo Xu

IPC: H01Q3/26 ,  H01Q21/06 ,  H01Q3/36 ,  H01Q15/14 ,  H01Q3/22 ,  H01Q3/24 ,  H04B7/06 ,  H01P1/18

Abstract: A high gain non-mechanical steerable beamforming antenna is provided together with a system implementing the antenna. The steerable beamforming antenna uses a reflectarray structure in conjunction with a phased array antenna element configuration. The antenna elements may include micro particle arrays (MPAs), having a number of micro particles disposed thereon. The micro particles may be implemented as graphene elements or as plasmonic elements having a sufficiently high electron mobility and an electron carrier density that is controlled as a function of an applied electronic tuning signal. The change in electron carrier density of the MPA elements, in turn, causes a phase change in incident waves provided by a source feed, facilitating steering of a main beam of an antenna pattern associated with the reflected incident waves.