METHOD FOR MANUFACTURING DISPLAY DEVICE

    公开(公告)号:US20220293688A1

    公开(公告)日:2022-09-15

    申请号:US17672720

    申请日:2022-02-16

    Abstract: The disclosure provides a method for manufacturing a display device, including the following steps. A substrate is provided. A pixel circuit is formed on the substrate. A light-emitting unit is formed on the pixel circuit. A touch sensing unit is formed on the light-emitting unit. An insulating layer is formed on the touch sensing unit. An anti-reflection layer is formed on the insulating layer. The method for manufacturing the display device of the embodiment of the disclosure can improve reliability.

    Electronic device
    102.
    发明授权

    公开(公告)号:US11443499B2

    公开(公告)日:2022-09-13

    申请号:US17323792

    申请日:2021-05-18

    Abstract: An electronic device is disclosed, which includes: a first substrate having a display area comprising a biometric sensing region and a non-sensing region; a biometric sensing module disposed corresponding to the biometric sensing region; a light altering member at least partially formed in the biometric sensing region, wherein the light altering member comprises a reflecting layer and the reflecting layer comprises a plurality of openings; and a supporting film disposed under the first substrate and contacting the first substrate, wherein a reflectivity of the biometric sensing region is greater than a reflectivity of the non-sensing region, the supporting film comprises a hole, and the biometric sensing module disposed corresponding to the hole.

    Display device
    105.
    发明授权

    公开(公告)号:US11088342B2

    公开(公告)日:2021-08-10

    申请号:US16880014

    申请日:2020-05-21

    Abstract: A display device is provided. The display device includes a substrate, a driving transistor, a first insulation layer, a first electrode and a second insulation layer. The driving transistor is disposed on the substrate and includes a gate electrode, and the gate electrode projects a first projection profile on the substrate. The first insulation layer is disposed on the driving transistor. The first electrode is disposed on the first insulation layer, and projects a second projection profile on the substrate. The second insulation layer is disposed on the first electrode and the first insulation layer. The second insulation layer has an opening, the opening exposes a portion of the first electrode, and the opening projects a third projection profile on the substrate.

    Method for making displays
    106.
    发明授权

    公开(公告)号:US11088173B2

    公开(公告)日:2021-08-10

    申请号:US16571928

    申请日:2019-09-16

    Abstract: A display device, and method for manufacture, having a substrate; a first thin film transistor (TFT) on the substrate, the first TFT having a first active layer, a first gate insulator, and a first gate electrode; a second TFT on the substrate, the second TFT having a second active layer, a second gate insulator and a second gate electrode. The first gate insulator is disposed between the first gate electrode and the first active layer, and the first gate insulator is in contact with the first active layer. The second gate insulator is disposed between the second gate electrode and the second active layer, and the second gate insulator is in contact with the second active layer. The first active layer is a different material than said second active layer, and a hydrogen concentration of the second gate insulator is less than a hydrogen concentration of the first gate insulator.

    Display device
    108.
    发明授权

    公开(公告)号:US10861879B2

    公开(公告)日:2020-12-08

    申请号:US16402478

    申请日:2019-05-03

    Abstract: A display device is disclosed, which includes: a first substrate; a first transistor disposed on the first substrate and including a first gate electrode, a first drain electrode, a first source electrode, and a first oxide semiconductor layer, wherein the first oxide semiconductor layer is oppositely disposed on the first gate electrode, and the first drain electrode and the first source electrode are electrically connected to the first oxide semiconductor layer; and a second transistor disposed on the first substrate and including a second gate electrode, a second drain electrode, a second source electrode, and a silicon semiconductor layer, wherein the second gate electrode is oppositely disposed on the silicon semiconductor layer, the second drain electrode and the second source electrode are electrically connected to the silicon semiconductor layer, and the first gate electrode is electrically connected to one of the second drain electrode and the second source electrode.

    Display device
    110.
    发明授权

    公开(公告)号:US10191345B2

    公开(公告)日:2019-01-29

    申请号:US15484161

    申请日:2017-04-11

    Abstract: A display device is disclosed, which includes: a first substrate; a first transistor disposed on the first substrate, wherein the first transistor comprises a first semiconductor layer; a second transistor disposed on the first substrate, wherein the second transistor includes a second semiconductor layer; and a first insulating layer disposed under the first semiconductor layer; wherein a thickness of the first insulating layer is greater than or equal to 200 nm and less than or equal to 500 nm; and wherein one of the first semiconductor layer and the second semiconductor layer comprises a silicon semiconductor layer, and the other comprises an oxide semiconductor layer.

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