公开(公告)号：US11088173B2

公开(公告)日：2021-08-10

申请号：US16571928

申请日：2019-09-16

Applicant: INNOLUX CORPORATION

Inventor： Kuan-feng Lee ,  Chandra Lius ,  Nai-Fang Hsu

IPC: H01L29/24 ,  H01L27/12 ,  H01L21/02 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L29/786

Abstract: A display device, and method for manufacture, having a substrate; a first thin film transistor (TFT) on the substrate, the first TFT having a first active layer, a first gate insulator, and a first gate electrode; a second TFT on the substrate, the second TFT having a second active layer, a second gate insulator and a second gate electrode. The first gate insulator is disposed between the first gate electrode and the first active layer, and the first gate insulator is in contact with the first active layer. The second gate insulator is disposed between the second gate electrode and the second active layer, and the second gate insulator is in contact with the second active layer. The first active layer is a different material than said second active layer, and a hydrogen concentration of the second gate insulator is less than a hydrogen concentration of the first gate insulator.

公开(公告)号：US10468434B2

公开(公告)日：2019-11-05

申请号：US15436073

申请日：2017-02-17

Applicant: INNOLUX CORPORATION

Inventor： Kuan-feng Lee ,  Chandra Lius ,  Nai-Fang Hsu

IPC: H01L27/12 ,  H01L21/02 ,  H01L29/24 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L29/786

Abstract: A display device, and method for manufacture, having a substrate; a first thin film transistor (TFT) on the substrate, the first TFT having a first active layer, a first gate insulator, and a first gate electrode; a second TFT on the substrate, the second TFT having a second active layer, a second gate insulator and a second gate electrode. The first gate insulator is disposed between the first gate electrode and the first active layer, and the first gate insulator is in contact with the first active layer. The second gate insulator is disposed between the second gate electrode and the second active layer, and the second gate insulator is in contact with the second active layer. A material of the first active layer is different than a material of the second active layer, and a hydrogen concentration of the second gate insulator is different from a hydrogen concentration of the first gate insulator.

公开(公告)号：US11984451B2

公开(公告)日：2024-05-14

申请号：US17368381

申请日：2021-07-06

Applicant: INNOLUX CORPORATION

Inventor： Kuan-feng Lee ,  Chandra Lius ,  Nai-Fang Hsu

IPC: H01L27/12 ,  H01L21/02 ,  H01L29/24 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L21/02164 ,  H01L21/02532 ,  H01L21/02565 ,  H01L21/02595 ,  H01L27/1222 ,  H01L27/1237 ,  H01L27/1251 ,  H01L27/1259 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/51 ,  H01L29/66757 ,  H01L29/66969 ,  H01L29/78675 ,  H01L29/7869 ,  H01L29/518

Abstract: A display device having a substrate; a first thin film transistor (TFT) on the substrate, the first TFT having a first active layer, a first gate insulator, and a first gate electrode; a second TFT on the substrate, the second TFT having a second active layer, a second gate insulator and a second gate electrode. The first gate insulator is disposed between the first gate electrode and the first active layer, and the first gate insulator is in contact with the first active layer. The second gate insulator is disposed between the second gate electrode and the second active layer, and the second gate insulator is in contact with the second active layer. The first active layer is a different material than the second active layer, and a hydrogen concentration of the second gate insulator is less than a hydrogen concentration of the first gate insulator.