公开(公告)号：US5057286A

公开(公告)日：1991-10-15

申请号：US474903

申请日：1990-02-05

申请人： Kotaro Chiba ,  Motohide Hatanaka ,  Masayuki Kawai

发明人： Kotaro Chiba ,  Motohide Hatanaka ,  Masayuki Kawai

IPC分类号： C30B7/00 ,  C30B7/10

CPC分类号： C30B7/10 ,  C30B29/18 ,  C30B7/00 ,  Y10S117/90 ,  Y10T117/1096

摘要： A vessel for use in hydrothermal synthesis, comprises: a vessel body to be heated from outside; an inner tubular vessel which is placed within the vessel body with a tubular gap being formed therebetween, the inner tubular vessel having an inner surface which is formed of a precious metal such as silver, gold or platinum, and having a cover with a first small hole therein; and a buffer compartment for covering the first small hole, the buffer compartment having one wall which is defined by the cover and having the other wall with a second small hole therein.

摘要翻译： 用于水热合成的容器包括：从外部加热的容器体; 内部管状容器，其内部管状间隙被放置在容器本体内，内部管状容器具有由诸如银，金或铂的贵金属形成的内表面，并且具有第一小的盖 洞中; 以及用于覆盖所述第一小孔的缓冲室，所述缓冲室具有由所述盖限定的一个壁，并且所述缓冲隔室具有在其中的第二小孔。

公开(公告)号：US4956047A

公开(公告)日：1990-09-11

申请号：US229686

申请日：1988-08-08

申请人： Meckie T. Harris ,  John J. Larkin ,  Alton F. Armington ,  John K. Kennedy

发明人： Meckie T. Harris ,  John J. Larkin ,  Alton F. Armington ,  John K. Kennedy

IPC分类号： C30B7/00

CPC分类号： C30B7/00 ,  C30B29/18 ,  Y10S117/90 ,  Y10T117/1096

摘要： Ultra high pure quartz is grown by a one step in-situ growth process where the nutrient is high purity silica. A negative temperature gradient is maintained between the nutrient zone and the seed zone until about the start of crystal growth. A sealable container made of silver contains the nutrient and the seed within the autoclave chamber.

摘要翻译： 超高纯石英通过一步原位生长过程生长，其中营养物是高纯度二氧化硅。 在营养区和种子区之间保持负温度梯度，直到晶体生长开始。 由银制成的可密封容器包含高压釜室内的营养物和种子。

公开(公告)号：USH580H

公开(公告)日：1989-02-07

申请号：US75799

申请日：1987-07-16

申请人： John R. Vig

发明人： John R. Vig

IPC分类号： C30B7/00

CPC分类号： C30B7/00 ,  C30B29/18

摘要： A method and apparatus for hydrothermal growing of high perfection quartz by continuously filtering contaminant particles in a separate filter vessel. The filter vessel is attached to the autoclave in which the quartz is grown. Mineralizer is continuously circulated through the filter vessel during the growth process to remove acmite and other contaminants which contribute to etch imperfections and inclusions in the resulting grown quartz.

公开(公告)号：USH560H

公开(公告)日：1988-12-06

申请号：US91686

申请日：1987-08-31

申请人： John Gualtieri

发明人： John Gualtieri

IPC分类号： C30B7/00 ,  C30B33/00

CPC分类号： C30B7/00 ,  C30B29/18 ,  C30B33/00

摘要： Dislocation and etch channel-free quartz resonator blanks are made from a cultured quartz stone by visualizing the dislocation-free areas of the cultured quartz stone by X-ray topography, cutting seed plates for the next generation of crystal growth from the dislocation-free areas of the cultured quartz stone, growing dislocation free quartz from said seed plates using conventional growth techniques, and cutting dislocation-free quartz resonator blanks from said dislocation-free quartz.

公开(公告)号：US4529430A

公开(公告)日：1985-07-16

申请号：US502926

申请日：1983-06-10

申请人： Vladislav B. Lazarev ,  Georgy P. Panasjuk ,  Marina N. Danchevskaya ,  Vladimir M. Gavrilko ,  Valery A. Kreisberg ,  Galina P. Budova ,  Sergei N. Torbin ,  Igor L. Voroshilov

发明人： Vladislav B. Lazarev ,  Georgy P. Panasjuk ,  Marina N. Danchevskaya ,  Vladimir M. Gavrilko ,  Valery A. Kreisberg ,  Galina P. Budova ,  Sergei N. Torbin ,  Igor L. Voroshilov

IPC分类号： C01B33/12 ,  C03C1/00 ,  C04B35/14 ,  C30B7/00

CPC分类号： C04B35/14 ,  C01B33/12 ,  C03C1/00 ,  C30B29/18 ,  C30B7/00

摘要： The present invention relates to a process for producing a fine-crystalline .alpha.-quartz with a crystal size of from 0.08 to 0.8 mm.The process comprises crystallization of amorphous silica in the atmosphere of water vapors in the presence of a crystallization promotor--a surface-active nitrogen-containing substance possessing basic properties in an amount of from 1.times.10.sup.-3 to 1% by weight of amorphous silica at a temperature within the range of from 300.degree. to 500.degree. C. under a pressure of from 20 to 400 atm for 6 to 100 hours.The process of the present invention is simple as regards its technology and equipment. The resulting product is noted for a low content of impurities and is fit for the manufacture of high-quality quartz glass and quartz ceramics.

摘要翻译： 本发明涉及一种晶体尺寸为0.08〜0.8mm的细晶α-石英的制造方法。 该方法包括在结晶促进剂存在下在水蒸气气氛中结晶无定形二氧化硅 - 具有1×10 -3至1重量％无定形二氧化硅的基本性质的表面活性含氮物质 温度在300〜500℃的范围内，在20〜400atm的压力下进行6〜100小时。 本发明的方法在技术和设备方面是简单的。 所得到的产品注意到低杂质含量，适用于制造高品质石英玻璃和石英陶瓷。

公开(公告)号：US4512846A

公开(公告)日：1985-04-23

申请号：US342944

申请日：1982-01-26

申请人： Paul J. Shlichta

发明人： Paul J. Shlichta

IPC分类号： C30B7/00 ,  C30B7/10

CPC分类号： C30B7/10 ,  C30B29/14 ,  C30B29/18 ,  C30B7/00

摘要： Crystals (51) of high morphological quality are grown by dissolution of a substance (28) to be grown into the crystal (51) in a suitable solvent (30) under high pressure, and by subsequent slow, time-controlled reduction of the pressure of the resulting solution (36). During the reduction of the pressure interchange of heat between the solution (36) and the environment is minimized by performing the pressure reduction either under isothermal or adiabatic conditions.

摘要翻译： 通过在合适的溶剂（30）中在高压下将待生长的物质（28）溶解在晶体（51）中并通过随后的缓慢的时间控制的压力降低来生长高形态质量的晶体（51） 的所得溶液（36）。 在通过在等温或绝热条件下进行减压来减少溶液（36）和环境之间的热量互换的最小化。

公开(公告)号：US4416726A

公开(公告)日：1983-11-22

申请号：US359534

申请日：1982-03-18

申请人： John R. Vig

发明人： John R. Vig

IPC分类号： C30B33/00 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： C30B33/00 ,  C30B29/18

摘要： An improvement in the technique of correcting the angles of cut of quartz resonator plates is disclosed. Photolytic etching the crystal blanks comprises the preferred method. Flat-pack or pill-box type holders include masking members which mask the appropriate portion of the blank. Teflon and Kalrez comprise preferred materials for fabricating the masking elements since such materials are resistant to the etching material utilized. Mesas are formed during etching and the blanks are thereafter lapped to provide the desired angle of cut. When desirable, the masking element is withdrawn at a uniform rate during etching so that the angle is corrected without the need for lapping.

摘要翻译： 公开了改进石英谐振器板切割角度的技术。 光解蚀刻晶体坯料包括优选的方法。 扁平包装或丸盒式支架包括遮蔽坯件的适当部分的遮蔽部件。 特氟隆和Kalrez包括用于制造掩模元件的优选材料，因为这些材料对所用的蚀刻材料是耐受的。 在蚀刻期间形成台面，然后研磨坯料以提供所需的切割角度。 当需要时，在蚀刻期间以均匀的速率取出掩模元件，使得角度被校正而不需要研磨。

公开(公告)号：US4066868A

公开(公告)日：1978-01-03

申请号：US593709

申请日：1975-07-07

申请人： Donald E. Witkin ,  Arnold G. Bowles

发明人： Donald E. Witkin ,  Arnold G. Bowles

IPC分类号： G05D23/19 ,  C30B7/00 ,  C30B7/10 ,  G05D23/20 ,  G05D23/22 ,  H05B1/02

CPC分类号： C30B29/18 ,  C30B7/00 ,  C30B7/10 ,  G05D23/1932 ,  G05D23/1934 ,  G05D23/20 ,  G05D23/22 ,  Y10T117/1008 ,  Y10T117/1096

摘要： The disclosed invention describes an apparatus and method for bringing a system having high interactive portions to a predetermined temperature distribution. The invention includes a difference controller which provides, through two separate drivers, a fixed total amount of energy to the system being controlled. If the system being controlled also has a long cycle time, second and third temperature controllers may be used to bring the system to the equilibrium temperature with a minimum amount of overshoot. The invention is particularly advantageous when used in connection with a high pressure, high temperature vessel useful in growing quartz crystals.

摘要翻译： 所公开的发明描述了一种将具有高互动部分的系统带到预定温度分布的装置和方法。 本发明包括差分控制器，其通过两个单独的驱动器向被控制的系统提供固定的总量的能量。 如果被控制的系统也具有较长的循环时间，则可以使用第二和第三温度控制器以最小量的过冲使系统达到平衡温度。 当与用于生长石英晶体的高压高温容器结合使用时，本发明是特别有利的。

公开(公告)号：US2543071A

公开(公告)日：1951-02-27

申请号：US3177648

申请日：1948-06-08

申请人： SLAWSON STEWART I

发明人： SLAWSON STEWART I

IPC分类号： B01D9/02

CPC分类号： C30B29/14 ,  C30B7/00 ,  C30B29/10 ,  C30B29/18 ,  C30B33/06 ,  Y10S117/902