公开(公告)号：US09778620B2

公开(公告)日：2017-10-03

申请号：US14423900

申请日：2013-11-06

申请人： Nivarox-FAR S.A.

发明人： Marc Stranczl ,  Thierry Hessler

IPC分类号： G04B15/14 ,  G04B17/26 ,  G04B15/12 ,  C30B1/10 ,  C30B29/18

CPC分类号： G04B15/14 ,  C30B1/10 ,  C30B29/18 ,  G04B15/12 ,  G04B17/26

摘要： Method for creating a flexible, multistable element (5): a silicon component (S) is etched with a beam (P) connecting two ends (E1, E2) of a rigid mass (MU) having a cross-section more than ten times that of said beam (P), SiO2 is grown at 1100° C. for a duration adjusted to obtain, on said beam (P), a first ratio (RA) of more than 1 between the section of a first peripheral layer (CP1) of SiO2, and that of a first silicon core (A1), and, on said mass (MU), a second ratio (RB) between the section of a second peripheral layer (CP2) of SiO2 and that of a second silicon core (A2), which is less than a hundredth of said first ratio (RA); cooling to ambient temperature is performed, to deform said beam (P) by buckling when said mass (MU) cools and contracts more than said beam (P).

公开(公告)号：US09435054B1

公开(公告)日：2016-09-06

申请号：US14638726

申请日：2015-03-04

申请人： Nassim Haramein

发明人： Nassim Haramein

IPC分类号： C30B29/18 ,  H01L41/187

CPC分类号： C30B29/18 ,  C30B33/00 ,  C30B33/06 ,  H01L41/187 ,  Y10T428/29

摘要： Crystals having a modified regular tetrahedron shape are provided. Crystals preferably have four substantially identical triangular faces that define four truncated vertices and six chamfered edges. The six chamfered edges can have an average length of l, and an average width of w, and 8≦l/w≦9.5.

摘要翻译： 提供具有改进的正四面体形状的晶体。 晶体优选具有四个基本相同的三角形面，其限定四个截顶和六个倒角边。 六个倒角边缘的平均长度可以为l，平均宽度w和8≤l/w≤9.5。

公开(公告)号：US09310771B2

公开(公告)日：2016-04-12

申请号：US14423918

申请日：2013-11-06

申请人： NIVAROX-FAR S.A.

发明人： Marc Stranczl ,  Thierry Hessler

IPC分类号： G04B17/26 ,  G04B15/14 ,  G04B15/12 ,  C30B1/10 ,  C30B29/18

CPC分类号： G04B15/14 ,  C30B1/10 ,  C30B29/18 ,  G04B15/12 ,  G04B17/26

摘要： A pallet lever mechanism for an escapement mechanism including a structure carrying a balance and an escape wheel, the pallet lever including pallet stones cooperating with the escape wheel, and a flexible, multistable element, and the pallet lever cooperates with the balance with horns of a first portion of the pallet lever connected by one such flexible element to the structure or to a second portion of the pallet lever carrying the pallet stones connected by one such flexible element to the fixed structure or to the first portion. One flexible element includes a prestressed beam buckled in an S or Z shape, the pallet lever mechanism including a pivot forcing the beam to have a node at the middle thereof.

摘要翻译： 一种用于擒纵机构的托盘杠杆机构，其包括承载平衡的结构和擒纵轮，所述托盘杠杆包括与所述擒纵轮配合的托盘石块以及柔性多元件，并且所述托盘杆与所述天平杆与 托盘杠杆的第一部分由一个这样的柔性元件连接到结构上，或者托盘操纵杆的第二部分，托盘操纵杆承载由一个这样的柔性元件连接到固定结构或第一部分的托盘石块。 一个柔性元件包括以S或Z形状弯曲的预应力梁，所述托盘杠杆机构包括枢轴，迫使所述梁在其中间具有节点。

公开(公告)号：US20140283737A1

公开(公告)日：2014-09-25

申请号：US14006169

申请日：2012-11-08

申请人： SHIN-ETSU QUARTZ PRODUCTS CO., LTD.

发明人： Shigeru Yamagata

IPC分类号： C30B15/10 ,  C03B19/09

CPC分类号： C30B15/10 ,  C03B19/095 ,  C30B11/002 ,  C30B29/06 ,  C30B29/18 ,  C30B35/002 ,  Y02P40/57 ,  Y10T117/1032

摘要： The present invention is directed to a single-crystal silicon pulling silica container, the silica container including a straight body portion, a curved portion, and a bottom portion, wherein the OH group concentration in the straight body portion is 30 to 300 ppm by mass, the OH group concentration in the bottom portion is 30 ppm by mass or less, and the difference in the OH group concentration between the straight body portion and the bottom portion is 30 ppm by mass or more. As a result, a low-cost single-crystal silicon pulling silica container, the silica container that can reduce cavity defects called voids and pinholes in pulled single crystal silicon, is provided.

摘要翻译： 本发明涉及一种单晶硅拉硅石容器，该二氧化硅容器包括直体部分，弯曲部分和底部，其中直体部分中的OH基浓度为30〜300质量ppm ，底部的OH基浓度为30质量ppm以下，直体部与底部之间的OH基浓度的差为30质量ppm以上。 结果，提供了一种低成本的单晶硅拉硅石容器，可以减少被称为空穴的凹陷的二氧化硅容器和拉制的单晶硅中的针孔。

公开(公告)号：US20090104103A1

公开(公告)日：2009-04-23

申请号：US12336017

申请日：2008-12-16

申请人： Noriyuki AGATA ,  Shinya KIKUGAWA ,  Yutaka SHIMIZU ,  Kazumi YOSHIDA ,  Masatoshi NISHIMOTO

发明人： Noriyuki AGATA ,  Shinya KIKUGAWA ,  Yutaka SHIMIZU ,  Kazumi YOSHIDA ,  Masatoshi NISHIMOTO

IPC分类号： C01B33/12

CPC分类号： C03C3/06 ,  C03C2201/02 ,  C03C2201/32 ,  C03C2201/50 ,  C30B7/10 ,  C30B29/18 ,  Y10T117/1008

摘要： An object of the present invention is to provide an artificial quartz member inhibited from suffering the decrease in transmittance in a laser light wavelength region which is caused by long-term irradiation with a laser light having a wavelength of 200 nm or shorter; and a process for producing the artificial quartz member. The invention provides an artificial quartz member for use as an optical element to be irradiated with a laser light having a wavelength of 200 nm or shorter, having an aluminum content of 200 ppb or lower.

摘要翻译： 本发明的目的在于提供一种人造石英部件，该人造石英部件由于长时间照射波长为200nm以下的激光而导致的激光波长区域的透射率降低; 以及人造石英部件的制造方法。 本发明提供一种人造石英部件，其用作要用200ppm或更低的铝含量的波长为200nm或更短的激光照射的光学元件。

公开(公告)号：US20070200647A1

公开(公告)日：2007-08-30

申请号：US11704125

申请日：2007-02-08

申请人： Mitsuaki Koyama ,  Yukihiro Kobayashi

发明人： Mitsuaki Koyama ,  Yukihiro Kobayashi

IPC分类号： G03H1/26

CPC分类号： H03H9/02559 ,  C30B29/18 ,  C30B29/30 ,  C30B33/00 ,  G01N29/2462 ,  G01N2291/0423 ,  G02F1/11 ,  G02F2202/20 ,  H03H9/02551 ,  H03H9/02614 ,  Y10T29/42

摘要： A method of manufacturing a spherical crystal blank in which the crystal axis is determined by a simple work with a high degree of accuracy includes the steps of: cutting out a cube from a crystal blank provided with crystal axes including a Z axis, and X and Y axes orthogonal to the Z axis, the cube including the Z axis as a side and being of a size capable of including the spherical crystal blank to be manufactured; then forming a reference hole for Z axis extending along the Z axis direction in reference to the side of the cube in the cube; and thereafter, forming the cube into a sphere so as to include a portion of the reference hole for Z axis.

摘要翻译： 通过以高精度的简单的工作来确定晶轴的球晶的制造方法包括以下步骤：从具有Z轴和X轴的晶轴的晶体坯切割立方体， Y轴与Z轴正交，立方体包括作为侧面的Z轴，并且具有能够包括要制造的球形晶体坯料的尺寸; 然后相对于立方体中的立方体的侧面，沿Z轴方向形成用于Z轴的基准孔; 之后，将该立方体形成为包括Z轴的基准孔的一部分的球体。

公开(公告)号：US07174620B2

公开(公告)日：2007-02-13

申请号：US10746400

申请日：2003-12-26

申请人： Akio Chiba ,  Kozo Ono ,  Tamotsu Kurosawa

发明人： Akio Chiba ,  Kozo Ono ,  Tamotsu Kurosawa

IPC分类号： H04R31/00

CPC分类号： H03H3/02 ,  C30B29/18 ,  C30B33/00 ,  H03H9/19 ,  Y10T29/42 ,  Y10T29/49002 ,  Y10T29/49005 ,  Y10T29/49798

摘要： A method of manufacturing a thin quartz crystal wafer from a quartz crystal block which is cut from a crystal body of synthetic quartz crystal and has a flat principal surface, comprises the steps of (a) converging a laser beam at a region in said quartz crystal block at a predetermined depth from the principal surface thereof to cause multiphoton phenomenon state, thereby breaking Si—O—Si bonds of quartz crystal in said region to form voids in said region, and (b) peeling said thin quartz crystal wafer from a body of said quartz crystal block along said voids. The above process is repeatedly performed on one quartz crystal block to peel off a plurality of thin quartz crystal wafers successively from the principal surface of the quartz crystal block. Each of the thin quartz crystal wafers is divided into individual quartz crystal blanks for making quartz crystal units.

摘要翻译： 从由合成石英晶体切割并具有平坦主表面的石英晶体块制造薄晶体晶片的方法包括以下步骤：（a）将激光束会聚在所述石英晶体的区域 在其主表面的预定深度处阻挡以产生多光子现象状态，从而破坏所述区域中的石英晶体的Si-O-Si键，以在所述区域中形成空隙，并且（b）将所述薄的石英晶片从主体 的所述石英晶体块。 上述过程在一个石英晶体块上重复进行，从石英晶体块的主表面连续地剥离多个薄的石英晶片。 每个薄的石英晶片被分成用于制造石英晶体单元的单独的石英晶体空白。

公开(公告)号：US20060175288A1

公开(公告)日：2006-08-10

申请号：US11341745

申请日：2006-01-27

申请人： Kiyoshi Aratake

发明人： Kiyoshi Aratake

IPC分类号： C23F1/00 ,  G04C19/00 ,  H03B7/14 ,  G04F5/00

CPC分类号： H03H3/02 ,  C30B29/18 ,  C30B33/08 ,  G04F5/063 ,  G04G21/04 ,  G04R20/10

摘要： To provide a manufacturing method of a small-sized quartz crystal vibrating piece, which can decrease processing variations due to accuracy of matching a front and a rear of a mask in etching of a quartz crystal wafer. According to a manufacturing method of a quartz crystal vibrating piece to be processed by etching a quartz crystal wafer from a front and a rear, a size of a mask used for etching is changed depending on a front and a rear of the quartz crystal wafer, a mask of a small size is defined as a reference mask, and a mask of a large size is defined as a relative mask so as to perform etching. The mask is unified to the size to be processed from the reference mask by over etching, even processing accuracy can be obtained, the small-sized quartz crystal vibrating piece can be manufactured, and the quartz crystal vibrating piece can be provided inexpensively and stably.

摘要翻译： 提供一种小型石英振动片的制造方法，其能够降低在蚀刻石英晶片时掩模的前后的匹配精度的加工变化。 根据通过从前后蚀刻石英晶片来处理的石英振动片的制造方法，用于蚀刻的掩模的尺寸根据石英晶片的前后而变化， 将小尺寸的掩模定义为参考掩模，将大尺寸的掩模定义为相对掩模，以进行蚀刻。 通过过蚀刻将掩模与参考掩模的尺寸统一，即使可以获得加工精度，也可以制造小型石英振动片，并且可以廉价且稳定地提供石英振动片。

公开(公告)号：US20050194352A1

公开(公告)日：2005-09-08

申请号：US11115153

申请日：2005-04-27

申请人： Syunsuke Satoh ,  Hozumi Nakata

发明人： Syunsuke Satoh ,  Hozumi Nakata

IPC分类号： C30B33/00 ,  C30B33/08 ,  G03F9/00 ,  H01L41/22 ,  H03H3/08 ,  H03H9/215

CPC分类号： H03H9/215 ,  C30B29/18 ,  C30B33/00 ,  C30B33/08 ,  H01L41/332 ,  H03H3/08

摘要： In a state in which respective portions of a quartz wafer have been masked by a plurality of kinds of mask layers that have respectively different etching rates, the quartz wafer is subjected to an etching process. Since the etching operation is started earlier at a first portion which is masked by the mask layer having a high etching rate, the amount of etching is increased at the first portion. In contrast, the start of the etching operation is delayed at a second portion which is masked by the mask layer having a low etching rate, and the amount of etching is reduced at the second portion. Thus, it becomes possible to form the quartz wafer into a desired shape.

摘要翻译： 在石英晶片的各个部分被具有不同蚀刻速率的多种掩模层掩蔽的状态下，对石英晶片进行蚀刻处理。 由于蚀刻操作在由蚀刻速率高的掩模层掩蔽的第一部分较早地开始，所以在第一部分处蚀刻量增加。 相反，蚀刻操作的开始在被蚀刻速率低的掩模层掩蔽的第二部分被延迟，并且在第二部分处蚀刻量减少。 因此，可以将石英晶片形成为期望的形状。

公开(公告)号：US6063301A

公开(公告)日：2000-05-16

申请号：US49292

申请日：1998-03-27

申请人： Kazunori Kiwada ,  Kazushige Umetsu ,  Katsumi Suzuki ,  Itaru Nagai

发明人： Kazunori Kiwada ,  Kazushige Umetsu ,  Katsumi Suzuki ,  Itaru Nagai

IPC分类号： C30B33/00 ,  H03H3/02 ,  B44C1/22

CPC分类号： H03H3/02 ,  C30B29/18 ,  C30B33/00 ,  Y10S134/902 ,  Y10S438/906

摘要： A method of smoothly processing a surface of crystal material, particularly a quartz crystal, to attain a good surface roughness and degree of eveness without substantial hillocks or micro-projections, without performing grinding or polishing processing. After lapping the surface of the crystal material, the lapped surface is etched with hydrofluoric acid. Finish etching is performed on the crystal material by buffer hydrofluoric acid as needed. In the manufacture of a crystal piece used in a crystal device, after the crystal wafer cut out from the rough crystal stone to the specified thickness is lapped, it is roughly etched to the desired thickness by hydrofluoric acid. Then, after ultrasonic washing by pure water, the crystal wafer is processed to the desired high quality of surface roughness, level of smoothness and thickness. The surface processing can be performed more easily, in less time, and with less labor than conventional methods, the cost is decreased, and productivity rises. In the manufacture of crystal resonator pieces, a rise in yield can be achieved.

摘要翻译： 在不进行研磨或抛光处理的情况下，平滑地处理晶体材料，特别是石英晶体的表面的方法，以获得良好的表面粗糙度和均匀度，而没有实质的小丘或微突起。 在研磨晶体材料的表面后，用氢氟酸蚀刻研磨的表面。 根据需要通过缓冲氢氟酸在晶体材料上进行完成蚀刻。 在晶体装置中使用的水晶片的制造中，将从粗晶石切出的晶片从规定厚度研磨后，用氢氟酸将其大致蚀刻至所需厚度。 然后，通过纯水超声波清洗后，将晶片加工成所需的高质量的表面粗糙度，平滑度和厚度。 表面处理可以在更短的时间内更容易地进行，并且以比常规方法更少的劳动来进行，成本降低，生产率提高。 在制造晶体谐振片时，可以实现产量的提高。