公开(公告)号：US20210193716A1

公开(公告)日：2021-06-24

申请号：US16725698

申请日：2019-12-23

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Wei-Feng Lin ,  Ying-Chih Kuo ,  Ying Chung

IPC: H01L27/146

Abstract: An image sensor package includes a transparent substrate with a recess formed in the transparent substrate, and an image sensor positioned in the recess so that light incident on the transparent substrate passes through the transparent substrate to the image sensor. The image sensor package also includes a circuit board electrically disposed in the recess and coupled to receive image data from the image sensor, and the image sensor is positioned in the recess between the circuit board and the transparent substrate.

公开(公告)号：US20210193704A1

公开(公告)日：2021-06-24

申请号：US16725687

申请日：2019-12-23

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Shiyu Sun

IPC: H01L27/146 ,  H01L21/762 ,  H01L21/285 ,  H01L21/02

Abstract: A method for forming a deep trench isolation structure for a CMOS image sensor includes providing a trench that extends from a first side toward a second side of a semiconductor substrate. The trench has an opening on the first side and a bottom and sides. A conformal layer of B-doped oxide is deposited on the bottom and sides of the trench and is less than half a width of the trench leaving a depthwise recess in the trench. A second material is deposited on the conformal layer of B-doped oxide in the trench filling the recess in the trench to the first side. The conformal layer of B-doped oxide is annealed driving boron from the conformal layer of B-doped oxide to the semiconductor substrate forming a B-doped region as a passivation layer juxtaposed next to the conformal layer of B-doped oxide having negative fixed charges.

公开(公告)号：US20210193702A1

公开(公告)日：2021-06-24

申请号：US16720236

申请日：2019-12-19

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Hui Zang ,  Gang Chen

IPC: H01L27/146

Abstract: A semiconductor structure for a CMOS image sensor includes a semiconductor substrate having a first side and a second side. A photodiode is disposed in the semiconductor substrate proximate to the first side. The photodiode accumulates image charge photogenerated in the photodiode in response to incident light directed through the second side. A deep trench isolation structure enclosing the photodiode. The deep trench isolation structure extends from the second side toward the first side. The deep trench isolation structure includes a light absorption region disposed at a first end of the deep trench isolation structure toward the first side.

公开(公告)号：US20210151482A1

公开(公告)日：2021-05-20

申请号：US16687660

申请日：2019-11-18

Applicant: OmniVision Technologies, Inc.

Inventor： Bill Phan ,  Yuanliang Liu ,  Duli Mao ,  Seong Yeol Mun ,  Alireza Bonakdar

IPC: H01L27/146

Abstract: An image sensor includes a substrate material. The substrate material includes a plurality of photodiodes disposed therein. The plurality of photodiodes includes a plurality of small photodiodes (SPDs) and a plurality of large photodiodes (LPDs) larger than the SPDs. An array of color filters is disposed over the substrate material. A buffer layer is disposed between the substrate material and the array of color filters. A metal pattern is disposed between the color filters in the array of color filters, and between the array of color filters and the buffer layer. An attenuation layer is disposed between the substrate material and the array of color filters. The attenuation layer is above and aligned with the plurality of SPDs and a portion of each of the plurality of LPDs. An edge of the attenuation layer is over one of the plurality of LPDs.

公开(公告)号：US10998285B2

公开(公告)日：2021-05-04

申请号：US16257136

申请日：2019-01-25

Applicant: OmniVision Technologies, Inc.

Inventor： Chien-Chan Yeh ,  Ying-Chih Kuo

IPC: H01L21/78 ,  H01L23/00 ,  H01L23/31 ,  H01L23/544

Abstract: A chip comprises a semiconductor substrate having a first side and a second side opposite to the first side, a plurality of conductive metal patterns formed on the first side of the semiconductor substrate, a plurality of solder balls formed on the first side of the semiconductor substrate, and at least one code pattern of a first group and at least one code pattern of a second group formed on the first side of the semiconductor substrate in a space free from the plurality of conductive metal patterns and the plurality of solder balls, wherein the code patterns are visible from a backside of the chip, and wherein a tracing number of the chip is represented by the code patterns.

公开(公告)号：US20210118925A1

公开(公告)日：2021-04-22

申请号：US16655017

申请日：2019-10-16

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Hui Zang ,  Gang Chen

IPC: H01L27/146

Abstract: A pixel cell includes a photodiode buried beneath a first side of semiconductor material and coupled to photogenerate image charge in response to incident light. A transfer gate is disposed over the photodiode and includes a vertical transfer gate portion extending a first distance from the first side into the semiconductor material. A floating diffusion region is disposed in the semiconductor material proximate to the transfer gate and is coupled to transfer the image charge from the photodiode toward the first side of the semiconductor material and into the floating diffusion region in response to a transfer control signal. A first pixel transistor having a first gate is disposed over the photodiode proximate to the first side of the semiconductor material. The first gate has a ring structure laterally surrounding the floating diffusion region and the transfer gate at the first side of the semiconductor material.

公开(公告)号：US20210111212A1

公开(公告)日：2021-04-15

申请号：US16597762

申请日：2019-10-09

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Sing-Chung Hu

IPC: H01L27/146 ,  H01L23/467 ,  H01L31/024

Abstract: Image sensors include a pixel die that is stacked on a logic die. The logic die includes at least one function logic element disposed on a bond side thereof, and a logic oxide array of raised logic oxide features also disposed on the bond side. The pixel die includes a pixel array disposed on a light receiving side thereof, and a pixel oxide array of raised pixel oxide features disposed on a bond side of the pixel die. A plurality of outer bonds is disposed between an outer region of the logic die and an outer region of the pixel die. A plurality of inner bonds is formed at an inner region of the image sensor between the pixel oxide array and the logic oxide array, the inner bonds being spaced apart by a plurality of fluidly connected air gaps that extend between the logic die and the pixel die.

公开(公告)号：US10963329B2

公开(公告)日：2021-03-30

申请号：US16162690

申请日：2018-10-17

Applicant: OmniVision Technologies, Inc.

Inventor： Dapeng Han

IPC: G06F11/00 ,  G06F11/07 ,  G06F9/30

Abstract: A checking module is coupled to one or more registers to verify data written to the one or more registers. The checking module includes a memory coupled to an arbiter to receive data and an address (corresponding to the data) from the arbiter. The data is written to the one or more registers at the address. Comparator logic is coupled to the memory and to the one or more registers to compare the data written to the one or more registers and the data in the memory. An error flag circuit is coupled to the comparator logic, and in response to a difference between the data in the memory and the data written to the one or more registers, the error flag circuit outputs an error signal.

公开(公告)号：US10962691B2

公开(公告)日：2021-03-30

申请号：US15450891

申请日：2017-03-06

Applicant: OmniVision Technologies, Inc.

Inventor： Chuen-Yi Yin ,  Jau-Jan Deng

IPC: G02B7/00 ,  G02B13/00 ,  G02B3/00 ,  G02B1/04 ,  B29D11/00

Abstract: An athermal lens system includes a converging lens element having a negative first thermo-optic coefficient, and a diverging lens element having a second thermo-optic coefficient more negative than the first thermo-optic coefficient, wherein the diverging lens element is coupled with the converging lens element to form a converging athermal doublet lens.

公开(公告)号：US20210082975A1

公开(公告)日：2021-03-18

申请号：US16575269

申请日：2019-09-18

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Qin Wang

IPC: H01L27/146

Abstract: Backside illuminated sensor pixel structure. In one embodiment, an image sensor includes a plurality of photodiodes arranged in rows and columns of a pixel array that are disposed in a semiconductor substrate. Individual photodiodes of the pixel array are configured to receive incoming light through a backside of the semiconductor substrate. The individual photodiodes have a diffusion region formed in an epitaxial region and a plurality of storage nodes (SGs) that are disposed on the front side of the semiconductor substrate and formed in the epitaxial region. An opaque isolation layer having a plurality of opaque isolation elements is disposed proximate to the front side of the semiconductor substrate and proximate to the diffusion region of the plurality of photodiodes. The opaque isolation elements are configured to block a path of incoming light from the backside of the semiconductor substrate toward the storage nodes.