公开(公告)号：US12289927B2

公开(公告)日：2025-04-29

申请号：US17705133

申请日：2022-03-25

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Qin Wang ,  Bill Phan ,  Shiyu Sun ,  Hui Zang

IPC: H10F39/00

Abstract: Image sensors, isolation structures, and techniques of fabrication are provided. An image sensor includes a source of electromagnetic radiation disposed on a substrate, a pixel array disposed on the substrate and thermally coupled with source of electromagnetic radiation, and an isolation structure disposed on the substrate between the source of electromagnetic radiation and the pixel array. The isolation structure can define a first reflective surface oriented on a first bias relative to a lateral axis of the pixel array and a second reflective surface oriented on a second bias relative to the lateral axis. The isolation structure can be configured to attenuate residual electromagnetic radiation reaching a proximal region of the pixel array by pairing a first reflection and a second reflection of the electromagnetic radiation by the first reflective surface and the second reflective surface.

公开(公告)号：US12176364B2

公开(公告)日：2024-12-24

申请号：US17562577

申请日：2021-12-27

Applicant: OmniVision Technologies, Inc.

Inventor： Shiyu Sun ,  Yuanwei Zheng

IPC: H01L27/146

Abstract: An image sensor includes a semiconductor substrate and a multilayer film. The semiconductor substrate includes a photodiode and a back surface having a recessed region that surrounds the photodiode. The multilayer film is on, and conformal to, the recessed region, and includes N layer-groups of adjacent high-κ material layers. Each pair of adjacent high-κ material layers of a same layer-group of the N layer-groups includes (i) an outer-layer having an outer fixed-charge density and (ii) an inner-layer, located between the outer-layer and the recessed region, that has an inner fixed-charge density. Each of the outer and inner fixed-charge density is negative. The inner fixed-charge density is more negative than the outer fixed-charge density.

公开(公告)号：US20230307478A1

公开(公告)日：2023-09-28

申请号：US17705133

申请日：2022-03-25

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Qin Wang ,  Bill Phan ,  Shiyu Sun ,  Hui Zang

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14629

Abstract: Image sensors, isolation structures, and techniques of fabrication are provided. An image sensor includes a source of electromagnetic radiation disposed on a substrate, a pixel array disposed on the substrate and thermally coupled with source of electromagnetic radiation, and an isolation structure disposed on the substrate between the source of electromagnetic radiation and the pixel array. The isolation structure can define a first reflective surface oriented on a first bias relative to a lateral axis of the pixel array and a second reflective surface oriented on a second bias relative to the lateral axis. The isolation structure can be configured to attenuate residual electromagnetic radiation reaching a proximal region of the pixel array by pairing a first reflection and a second reflection of the electromagnetic radiation by the first reflective surface and the second reflective surface.

公开(公告)号：US11233088B2

公开(公告)日：2022-01-25

申请号：US16900722

申请日：2020-06-12

Applicant: OmniVision Technologies, Inc.

Inventor： Gang G. Chen ,  Shiyu Sun

IPC: H01L27/146 ,  H01L23/00 ,  H01L23/538

Abstract: A method of routing electrical connections in a wafer-on-wafer structure comprises, bonding a metal bonding pad of a first wafer to a metal bonding pad of a second wafer; bonding first wafer to the second wafer with a material different from the metal bonding pads; forming metal interconnect structures connecting the metal bonding pad of the first wafer to a first device disposed within a first and second side of the first wafer; and forming metal interconnect structures connecting the metal bonding pad of the second wafer to a second and third devices disposed within the second wafer, to connect the first device to the second and third devices through the metal bonding pads, wherein the electrical connections of the devices between the first and second wafers do not have a through-via that passes completely through the first or the second wafer.

公开(公告)号：US20210391376A1

公开(公告)日：2021-12-16

申请号：US16900722

申请日：2020-06-12

Applicant: OmniVision Technologies, Inc.

Inventor： Gang G. Chen ,  Shiyu Sun

IPC: H01L27/146 ,  H01L23/00 ,  H01L23/538

Abstract: A method of routing electrical connections in a wafer-on-wafer structure comprises, bonding a metal bonding pad of a first wafer to a metal bonding pad of a second wafer; bonding first wafer to the second wafer with a material different from the metal bonding pads; forming metal interconnect structures connecting the metal bonding pad of the first wafer to a first device disposed within a first and second side of the first wafer; and forming metal interconnect structures connecting the metal bonding pad of the second wafer to a second and third devices disposed within the second wafer, to connect the first device to the second and third devices through the metal bonding pads, wherein the electrical connections of the devices between the first and second wafers do not have a through-via that passes completely through the first or the second wafer.

公开(公告)号：US11121169B2

公开(公告)日：2021-09-14

申请号：US16452272

申请日：2019-06-25

Applicant: OmniVision Technologies, Inc.

Inventor： Chiao-Ti Huang ,  Shiyu Sun ,  Gang Chen

IPC: H01L27/146 ,  H01L21/28

Abstract: A method for manufacturing an image sensor includes, for each of a plurality of photosensitive pixels of the image sensor, forming a trench in a semiconductor substrate of the image sensor, and depositing temporary transfer gate material in and above the trench. The method further includes, after the step of depositing temporary transfer gate material, high-temperature annealing at least a portion of the semiconductor substrate. In addition, the method includes, after the step of high-temperature annealing, (a) removing the temporary transfer gate material, thereby reopening the trench, (b) depositing a passivation lining, having a high-k dielectric, in the reopened trench, and (c) depositing metal on the high-k dielectric passivation lining to form a metal vertical transfer gate in the trench and extending above the trench.

公开(公告)号：US12262563B2

公开(公告)日：2025-03-25

申请号：US17701632

申请日：2022-03-22

Applicant: Omnivision Technologies, Inc.

Inventor： Shiyu Sun ,  Yuanwei Zheng ,  Gang Chen ,  Sing-Chung Hu ,  Armin Yazdani

IPC: H10F39/18

Abstract: A pixel cell is formed on a semiconductor substrate having a front surface. The pixel cell includes a photodiode, a floating diffusion region, and a transfer gate. The photodiode is disposed in the semiconductor substrate. The floating diffusion region includes a first doped region disposed in the semiconductor substrate, wherein the first doped region extends from the front surface to a first junction depth in the semiconductor substrate. The transfer gate is configured to selectively couple the photodiode to the floating diffusion region controlling charge transfer between the photodiode and the floating diffusion region. The transfer gate includes a planar gate disposed on the front surface of the semiconductor substrate and a pair of vertical gate electrodes. Each vertical gate electrode extending a gate depth from the planar gate into the semiconductor substrate. The first junction depth is greater than the gate depth.

公开(公告)号：US20230307484A1

公开(公告)日：2023-09-28

申请号：US17701632

申请日：2022-03-22

Applicant: Omnivision Technologies, Inc.

Inventor： Shiyu Sun ,  Yuanwei Zheng ,  Gang Chen ,  Sing-Chung Hu ,  Armin Yazdani

IPC: H01L27/146

CPC classification number: H01L27/14656

Abstract: A pixel cell is formed on a semiconductor substrate having a front surface. The pixel cell includes a photodiode, a floating diffusion region, and a transfer gate. The photodiode is disposed in the semiconductor substrate. The floating diffusion region includes a first doped region disposed in the semiconductor substrate, wherein the first doped region extends from the front surface to a first junction depth in the semiconductor substrate. The transfer gate is configured to selectively couple the photodiode to the floating diffusion region controlling charge transfer between the photodiode and the floating diffusion region. The transfer gate includes a planar gate disposed on the front surface of the semiconductor substrate and a pair of vertical gate electrodes. Each vertical gate electrode extending a gate depth from the planar gate into the semiconductor substrate. The first junction depth is greater than the gate depth.

公开(公告)号：US11769779B2

公开(公告)日：2023-09-26

申请号：US16725687

申请日：2019-12-23

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Shiyu Sun

IPC: H01L27/146 ,  H01L21/285 ,  H01L21/02 ,  H01L21/762

CPC classification number: H01L27/1463 ,  H01L21/02129 ,  H01L21/02271 ,  H01L21/28525 ,  H01L21/76224 ,  H01L21/76237 ,  H01L27/1464 ,  H01L27/1469 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14698

Abstract: A method for forming a deep trench isolation structure for a CMOS image sensor includes providing a trench that extends from a first side toward a second side of a semiconductor substrate. The trench has an opening on the first side and a bottom and sides. A conformal layer of B-doped oxide is deposited on the bottom and sides of the trench and is less than half a width of the trench leaving a depthwise recess in the trench. A second material is deposited on the conformal layer of B-doped oxide in the trench filling the recess in the trench to the first side. The conformal layer of B-doped oxide is annealed driving boron from the conformal layer of B-doped oxide to the semiconductor substrate forming a B-doped region as a passivation layer juxtaposed next to the conformal layer of B-doped oxide having negative fixed charges.

公开(公告)号：US11670662B2

公开(公告)日：2023-06-06

申请号：US17133553

申请日：2020-12-23

Applicant: OmniVision Technologies, Inc.

Inventor： Cynthia Sun Yee Lee ,  Shiyu Sun

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/1462 ,  H01L27/14645 ,  H01L27/14685

Abstract: An image sensor with passivated full deep-trench isolation includes a semiconductor substrate, the substrate including a plurality of sidewalls that form a plurality of trenches that separates pixels of a pixel array, and a passivation layer lining the plurality of sidewall surfaces and the back surface of the semiconductor substrate. A method for forming an image sensor with passivated full deep-trench isolation includes forming trenches in a semiconductor substrate, filling the trenches with a sacrificial material, forming a plurality of photodiode regions, forming a circuit layer, thinning the semiconductor substrate, and removing the sacrificial material. A method for reducing noise in an image sensor includes removing material from a semiconductor substrate to form a plurality of trenches that extend from a front surface toward a back surface, and depositing a dielectric material onto the back surface and into the plurality of trenches through a back opening of each trench.