中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

148 records (took 0.02 seconds)

    Method for fabricating a hybrid orientation substrate
    111.
    发明授权
    Method for fabricating a hybrid orientation substrate 有权
    混合取向基板的制造方法

    公开(公告)号：US07682932B2

    公开(公告)日：2010-03-23

    申请号：US12126933

    申请日：2008-05-26

    Applicant: Chien-Ting Lin ,  Che-Hua Hsu ,  Yao-Tsung Huang ,  Guang-Hwa Ma

    Inventor： Chien-Ting Lin ,  Che-Hua Hsu ,  Yao-Tsung Huang ,  Guang-Hwa Ma

    IPC: H01L21/30

    CPC classification number: H01L21/02694 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02658 ,  H01L21/02667 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/823807 ,  H01L29/7843

    Abstract: A method for fabricating a hybrid orientation substrate includes steps of providing a direct silicon bonding (DSB) wafer having a first substrate with (100) crystalline orientation and a second substrate with (110) crystalline orientation directly bonded on the first substrate, forming and patterning a first blocking layer on the second substrate to define a first region not covered by the first blocking layer and a second region covered by the first blocking layer, performing an amorphization process to transform the first region of the second substrate into an amorphized region, and performing an annealing process to recrystallize the amorphized region into the orientation of the first substrate and to make the second region stressed by the first blocking layer.

    Abstract translation: 一种用于制造混合取向衬底的方法包括以下步骤：提供具有（100）结晶取向的第一衬底的直接硅键合（DSB）晶片和具有（110）结晶取向直接接合在第一衬底上的第二衬底，形成和图案化 在第二衬底上的第一阻挡层，以限定未被第一阻挡层覆盖的第一区域和由第一阻挡层覆盖的第二区域，执行非晶化过程以将第二衬底的第一区域变换为非晶化区域;以及 执行退火处理以使非晶化区域再结晶成第一衬底的取向并使第二区域受到第一阻挡层的应力。

    METHOD FOR FABRICATING SEMICONDUCTOR STRUCTURE AND STRUCTURE OF STATIC RANDOM ACCESS MEMORY
    113.
    发明申请
    METHOD FOR FABRICATING SEMICONDUCTOR STRUCTURE AND STRUCTURE OF STATIC RANDOM ACCESS MEMORY 有权
    制造半导体结构和静态随机存取存储器结构的方法

    公开(公告)号：US20090242997A1

    公开(公告)日：2009-10-01

    申请号：US12058208

    申请日：2008-03-28

    Applicant: Chih-Hao Yu ,  Li-Wei Cheng ,  Che-Hua Hsu ,  Tian-Fu Chiang ,  Cheng-Hsien Chou ,  Chien-Ming Lai ,  Yi-Wen Chen ,  Chien-Ting Lin ,  Guang-Hwa Ma

    Inventor： Chih-Hao Yu ,  Li-Wei Cheng ,  Che-Hua Hsu ,  Tian-Fu Chiang ,  Cheng-Hsien Chou ,  Chien-Ming Lai ,  Yi-Wen Chen ,  Chien-Ting Lin ,  Guang-Hwa Ma

    IPC: H01L29/00 ,  H01L21/20

    CPC classification number: H01L27/11

    Abstract: A method for fabricating a semiconductor structure is disclosed. A substrate with a first transistor having a first dummy gate and a second transistor having a second dummy gate is provided. The conductive types of the first transistor and the second transistor are different. The first and second dummy gates are simultaneously removed to form respective first and second openings. A high-k dielectric layer, a second type conductive layer and a first low resistance conductive layer are formed on the substrate and fill in the first and second openings, with the first low resistance conductive layer filling up the second opening. The first low resistance conductive layer and the second type conductive layer in the first opening are removed. A first type conductive layer and a second low resistance conductive layer are then formed in the first opening, with the second low resistance conductive layer filling up the first opening.

    Abstract translation: 公开了一种制造半导体结构的方法。 提供具有第一晶体管的衬底，其具有第一虚拟栅极和具有第二虚拟栅极的第二晶体管。 第一晶体管和第二晶体管的导电类型不同。 同时去除第一和第二伪栅极以形成相应的第一和第二开口。 在基板上形成高k电介质层，第二导电层和第一低电阻导电层，并填充第一和第二开口，第一低电阻导电层填充第二开口。 第一开口中的第一低电阻导电层和第二导电层被去除。 然后在第一开口中形成第一导电层和第二低电阻导电层，第二低电阻导电层填满第一开口。

    METHOD FOR FABRICATING A HYBRID ORIENTATION SUBSTRATE
    114.
    发明申请
    METHOD FOR FABRICATING A HYBRID ORIENTATION SUBSTRATE 有权
    用于制造混杂方向衬底的方法

    公开(公告)号：US20080254604A1

    公开(公告)日：2008-10-16

    申请号：US12126933

    申请日：2008-05-26

    Applicant: Chien-Ting Lin ,  Che-Hua Hsu ,  Yao-Tsung Huang ,  Guang-Hwa Ma

    Inventor： Chien-Ting Lin ,  Che-Hua Hsu ,  Yao-Tsung Huang ,  Guang-Hwa Ma

    IPC: H01L21/265

    CPC classification number: H01L21/02694 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02658 ,  H01L21/02667 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/823807 ,  H01L29/7843

    Abstract: A method for fabricating a hybrid orientation substrate includes steps of providing a direct silicon bonding (DSB) wafer having a first substrate with (100) crystalline orientation and a second substrate with (110) crystalline orientation directly bonded on the first substrate, forming and patterning a first blocking layer on the second substrate to define a first region not covered by the first blocking layer and a second region covered by the first blocking layer, performing an amorphization process to transform the first region of the second substrate into an amorphized region, and performing an annealing process to recrystallize the amorphized region into the orientation of the first substrate and to make the second region stressed by the first blocking layer.

    Abstract translation: 一种用于制造混合取向衬底的方法包括以下步骤：提供具有（100）结晶取向的第一衬底的直接硅键合（DSB）晶片和具有（110）结晶取向直接接合在第一衬底上的第二衬底，形成和图案化 在第二衬底上的第一阻挡层，以限定未被第一阻挡层覆盖的第一区域和由第一阻挡层覆盖的第二区域，执行非晶化过程以将第二衬底的第一区域变换为非晶化区域;以及 执行退火处理以使非晶化区域再结晶成第一衬底的取向并使第二区域受到第一阻挡层的应力。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    115.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20070298573A1

    公开(公告)日：2007-12-27

    申请号：US11309094

    申请日：2006-06-22

    Applicant: Chien-Ting Lin ,  Liang-Wei Chen ,  Che-Hua Hsu ,  Guan-Hua Ma

    Inventor： Chien-Ting Lin ,  Liang-Wei Chen ,  Che-Hua Hsu ,  Guan-Hua Ma

    IPC: H01L21/336 ,  H01L21/4763

    CPC classification number: H01L29/665 ,  H01L21/28097 ,  H01L29/4975 ,  H01L29/6653 ,  H01L29/6659 ,  H01L29/7833

    Abstract: The invention is directed to a method for manufacturing a semiconductor device. The method comprises steps of forming a gate dielectric layer, a polysilicon layer and a patterned cap layer over a substrate sequentially and patterning the polysilicon layer to be a polysilicon gate by using the patterned cap layer as a mask. A plurality of lightly doped drain (LDD) regions are formed in the substrate aside the polysilicon gate, wherein a channel region is formed between the LDD regions in the substrate. A spacer is formed on the sidewall of the polysilicon gate and a source/drain region is formed in the substrate adjacent to the spacer. The patterned cap layer is removed and the spacer is removed. A metal silicidation process is performed for transforming the polysilicon gate into a metal silicide gate and forming a metal silicide layer at a surface of the source/drain region.

    Abstract translation: 本发明涉及一种制造半导体器件的方法。 该方法包括以下步骤：顺序地在衬底上形成栅极电介质层，多晶硅层和图案化覆盖层，并通过使用图案化盖层作为掩模将多晶硅层图案化为多晶硅栅极。 在多晶硅栅极之外的衬底中形成多个轻掺杂漏极（LDD）区域，其中在衬底中的LDD区域之间形成沟道区域。 在多晶硅栅极的侧壁上形成间隔物，并且在与衬垫相邻的衬底中形成源/漏区。 去除图案化的盖层并移除间隔物。 进行金属硅化处理，以将多晶硅栅极变换为金属硅化物栅极，并在源极/漏极区域的表面形成金属硅化物层。

    Method of fabricating a MOS transistor
    117.
    发明授权
    Method of fabricating a MOS transistor 有权
    制造MOS晶体管的方法

    公开(公告)号：US06294415B1

    公开(公告)日：2001-09-25

    申请号：US09558220

    申请日：2000-04-26

    Applicant: Hua-Chou Tseng ,  Chien-Ting Lin

    Inventor： Hua-Chou Tseng ,  Chien-Ting Lin

    IPC: H01L21336

    CPC classification number: H01L29/6653 ,  H01L21/22 ,  H01L21/26506 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659

    Abstract: An improved method of fabricating a MOS transistor on a semiconductor wafer is disclosed. A pre-amorphization implant (PAI) process is used to dope the silicon substrate adjacent to the gate. The dopants formed in the silicon substrate during the first ion implantation process are driven into the substrate to form the HDD via a salicide process. A conventional annealing process is skipped in the present invention, which significantly reduces the thermal budget of the manufacturing process.

    Abstract translation: 公开了一种在半导体晶片上制造MOS晶体管的改进方法。 使用预非晶化植入（PAI）工艺来掺杂与栅极相邻的硅衬底。 在第一离子注入工艺期间在硅衬底中形成的掺杂剂被驱动到衬底中，以通过自对准硅化物工艺形成HDD。 在本发明中跳过了传统的退火过程，这显着降低了制造过程的热预算。

    In-tube fixing assembly
    118.
    发明授权
    In-tube fixing assembly 有权

    公开(公告)号：US11415247B2

    公开(公告)日：2022-08-16

    申请号：US16184687

    申请日：2018-11-08

    Applicant: Chien-Ting Lin

    Inventor： Chien-Ting Lin

    IPC: F16L15/00 ,  F16B17/00 ,  F16B9/00 ,  F16L13/14 ,  F16L55/11 ,  F16B7/10

    Abstract: An in-tube fixing assembly includes a primary tube having an inner space and an inner wall; a fixing member inserted into the inner space from an opened end of the primary tube and provided with at least one through hole at an appropriate position; and at least one screw member, a diameter of the screw member gradually decreasing from the operation end to the insertion end, wherein the screw member is inserted into the through hole in a direction from the opened end to the inner space of the primary tube, the insertion end of the screw member abuts against the inner wall of the primary tube to form a small recess thereon that are complementary to a shape of the screw member.

    Composite stand stud
    119.
    发明授权
    Composite stand stud 有权

    公开(公告)号：US10995897B2

    公开(公告)日：2021-05-04

    申请号：US16596970

    申请日：2019-10-09

    Applicant: Chien-Ting Lin

    Inventor： Chien-Ting Lin

    IPC: F16M11/04

    Abstract: A composite stand stud includes a body portion, a screw and a tubular member. The body portion includes a support platform, a support body, and a connecting portion. A diameter of the support platform is larger than a diameter of the support body, and two ends of the support body are respectively connected to the support platform and the connecting portion. A diameter of the screw is smaller than a diameter of the support body, and one end of the screw is defined as an embedded end disposed in the connecting portion of the body portion, and the other end thereof is defined as a penetrating end penetrating from a center of the support platform to an outside of the body portion. The screw and the support platform are perpendicular to each other. The tubular member is wrapped around an outer edge of the support body.

Patent Agency Ranking