公开(公告)号：US07203601B2

公开(公告)日：2007-04-10

申请号：US10911380

申请日：2004-08-04

申请人： Takayuki Ito ,  Hiromitsu Takahashi

发明人： Takayuki Ito ,  Hiromitsu Takahashi

IPC分类号： G06F19/00

CPC分类号： B25J9/1687

摘要： A work mounting device in which an operation for teaching a robot to mount a work on a work mounting member is automated. The work is gripped by a hand placed on an arm tip portion of the robot and the operation for mounting the work on the work mounting member is taught. A plurality of distance sensors are disposed on the work mounting member or the hand. Distances between each sensor and the work or distances between each sensor and the work mounting member are measured. A robot controller maintains an attitude of the robot so that the distances detected by the distance sensors are uniform and, at the same time, allows the work to approach the work mounting member so that a plurality of holes of the work are engaged with a plurality of respective protrusions of the work mounting member. Based on the distance data detected by the distance sensors, a disturbance estimation observer, a load torque on motors for each axis or the like, the movement of the robot is stopped automatically when the work reaches a position where the work is in contact with the work mounting member or is very close to contact therewith. The position and attitude of the robot at this time is taught.

摘要翻译： 一种工件安装装置，其中用于教导机器人将工件安装在工件安装构件上的操作是自动化的。 该工作被放置在机器人的臂尖部分上的手抓住，并且教导了将工件安装在工件安装构件上的操作。 多个距离传感器设置在工件安装构件或手上。 测量每个传感器与工件之间的距离或每个传感器与工件安装构件之间的距离。 机器人控制器保持机器人的姿态，使得由距离传感器检测到的距离是均匀的，并且同时允许工作靠近工件安装构件，使得工件的多个孔与多个 的工件安装构件的各个突起。 基于由距离传感器检测到的距离数据，扰动估计观察者，针对各轴的电动机的负载转矩等，当工件到达与工作接触的位置时，机器人的移动自动停止 工作安装构件或非常接近与其接触。 此时教授机器人的位置和态度。

公开(公告)号：US20060216875A1

公开(公告)日：2006-09-28

申请号：US11389212

申请日：2006-03-27

申请人： Takayuki Ito ,  Kouji Matsuo ,  Naoki Tamaoki ,  Yoshinori Honguh ,  Kyoichi Suguro

发明人： Takayuki Ito ,  Kouji Matsuo ,  Naoki Tamaoki ,  Yoshinori Honguh ,  Kyoichi Suguro

IPC分类号： H01L21/84

CPC分类号： H01L21/324 ,  H01L21/268 ,  H01L21/823814 ,  H01L29/6653 ,  H01L29/6659 ,  H01L29/7833

摘要： A method for annealing a semiconductor substrate by light irradiation, includes depositing a translucent film with a predetermined thickness on a semiconductor substrate. The translucent film has a refractive index that is smaller than that of the semiconductor substrate. The thickness is defined by a peak wavelength of the light and the refractive index of the translucent film. The semiconductor substrate is heated in a temperature range of about 300° C. to about 600° C. A surface of the semiconductor substrate is heated with the light which has a pulse width of about 0.1 ms to about 100 ms.

摘要翻译： 通过光照射对半导体衬底进行退火的方法包括在半导体衬底上沉积预定厚度的半透明膜。 半透明膜的折射率小于半导体基板的折射率。 厚度由光的峰值波长和半透明膜的折射率决定。 将半导体衬底在约300℃至约600℃的温度范围内加热。用脉冲宽度为约0.1ms至约100ms的光来加热半导体衬底的表面。

公开(公告)号：US07060581B2

公开(公告)日：2006-06-13

申请号：US10960140

申请日：2004-10-08

申请人： Takayuki Ito ,  Kyoichi Suguro

发明人： Takayuki Ito ,  Kyoichi Suguro

IPC分类号： H01L21/336

CPC分类号： H01L21/823892 ,  H01L21/823807

摘要： A method for manufacturing a semiconductor device, includes forming a first impurity implanted layer in a semiconductor substrate by selectively implanting ions of a first impurity. A dummy pattern is formed on a surface of the semiconductor substrate above the first impurity implanted layer. A second impurity implanted layer is formed in the semiconductor substrate by implanting ions of a second impurity. An interlevel insulating film is buried on the surface of the semiconductor substrate so as to planarize at the level of the dummy pattern. Ions of the first and second impurities are activated by irradiating the semiconductor substrate with a pulsed light at a pulse width of 0.1 ms to 100 ms. An opening is formed by selectively removing the dummy pattern. A gate insulating film and a gate electrode are formed on the exposed surface of the semiconductor substrate.

摘要翻译： 一种半导体器件的制造方法，包括通过选择性地注入第一杂质的离子，在半导体衬底中形成第一杂质注入层。 在第一杂质注入层上方的半导体衬底的表面上形成虚设图形。 通过注入第二杂质的离子，在半导体衬底中形成第二杂质注入层。 在半导体衬底的表面上埋设层间绝缘膜，以在虚拟图案的水平面上平坦化。 通过以0.1ms至100ms的脉冲宽度的脉冲光照射半导体衬底来激活第一和第二杂质的离子。 通过选择性地去除虚拟图案形成开口。 在半导体衬底的暴露表面上形成栅极绝缘膜和栅电极。

公开(公告)号：US07045458B2

公开(公告)日：2006-05-16

申请号：US10924909

申请日：2004-08-25

申请人： Takayuki Ito ,  Kyoichi Suguro

发明人： Takayuki Ito ,  Kyoichi Suguro

IPC分类号： H01L21/44

CPC分类号： H01L21/26506 ,  H01L21/28052 ,  H01L29/665 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor comprises a substrate including a single crystal semiconductor region, and a pattern including a line pattern provided on the substrate, the line pattern having a longitudinal direction differing from a crystal orientation of the single crystal semiconductor region.

摘要翻译： 半导体包括包括单晶半导体区域的衬底和包括设置在衬底上的线图案的图案，该线图案具有与单晶半导体区域的晶体取向不同的纵向方向。

公开(公告)号：US07041584B2

公开(公告)日：2006-05-09

申请号：US10867765

申请日：2004-06-16

申请人： Masayuki Tanaka ,  Kazuaki Nakajima ,  Yoshitaka Tsunashima ,  Takayuki Ito ,  Kyoichi Suguro

发明人： Masayuki Tanaka ,  Kazuaki Nakajima ,  Yoshitaka Tsunashima ,  Takayuki Ito ,  Kyoichi Suguro

IPC分类号： H01L21/324 ,  H01L21/335

CPC分类号： H01L21/324 ,  H01L21/28518 ,  H01L21/32053 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76864 ,  H01L21/76886 ,  H01L29/665

摘要： An aspect of the present invention provides a method of manufacturing a semiconductor device, including, forming an insulating film on a silicide layer formed at the surface of a silicon semiconductor substrate, etching the insulating film to form a contact hole in which the silicide layer is exposed, forming a metal nitride film on the bottom and side wall of the contact hole, carrying out a first heating process at 600° C. or lower on the substrate, carrying out, during the first heating process, a second heating process for 10 msec or shorter with light whose main wavelength is shorter than a light absorbing end of silicon, forming a contact conductor in the contact hole after the second heating process, and forming, on the insulating film, wiring that is electrically connected to the substrate through the contact conductor.

公开(公告)号：US20060074264A1

公开(公告)日：2006-04-06

申请号：US11242801

申请日：2005-10-05

申请人： Takayuki Ito ,  Yushi Kaneko

发明人： Takayuki Ito ,  Yushi Kaneko

IPC分类号： C07C41/22

CPC分类号： C07C41/22 ,  C07C41/24 ,  C07C41/54 ,  C07C43/123 ,  C07C43/17 ,  C07C43/313

摘要： A method of producing a fluorine-containing vinyl ether compound, which contains the step of: fluorinating a compound of formula (I-1) or (I-2): wherein R is a straight-chain, branched-chain or cyclic alkyl group that may have a substituent and/or an unsaturated bond; X11 is a halogen atom other than a fluorine atom; X12, X13, and X14 each independently are a halogen atom; X21 is a halogen atom other than a fluorine atom; and X22 and X23 each independently are a halogen atom.

摘要翻译： 含有以下步骤的含氟乙烯基醚化合物的制备方法：氟化式（I-1）或（I-2）化合物：其中R是直链，支链或环状烷基 可以具有取代基和/或不饱和键; X 11是除氟原子以外的卤素原子; X 12，X 13和X 14各自独立地为卤素原子; X 21是除氟原子以外的卤素原子; 和X 22和X 23各自独立地是卤素原子。

公开(公告)号：US20050230448A1

公开(公告)日：2005-10-20

申请号：US09940190

申请日：2001-08-28

申请人： Kuniyuki Miura ,  Masahiro Toda ,  Takayuki Ito ,  Hironao Honaga ,  Noboru Oomoto

发明人： Kuniyuki Miura ,  Masahiro Toda ,  Takayuki Ito ,  Hironao Honaga ,  Noboru Oomoto

IPC分类号： B41J11/30 ,  B41J15/00 ,  B65H1/00 ,  B65H5/00 ,  B65H20/20 ,  B65H23/10 ,  B65H23/24

CPC分类号： B65H20/20 ,  B65H23/245 ,  B65H2220/02 ,  B65H2220/04 ,  B65H2404/143 ,  B65H2406/31 ,  B65H2511/12 ,  B65H2515/312 ,  B65H2701/11231

摘要： A tractor feeds a perforated continuous paper sheet to a printing position. The feeding force of a fusing device located downstream of the printing position is set larger than the feeding force of the tractor in order to apply tension to the continuous paper sheet at the printing position. A braking device located upstream of the tractor applies a braking force balancing with the feeding force of the fusing device to the continuous paper sheet. The braking force of the braking device is varied depending upon the properties of the paper sheet or the environmental conditions. This arrangement makes it possible to stabilize the feeding state even under situations where the sheet feeding force is likely to become unstable, thereby realizing printing without any deviation from the predetermined position. Further, this arrangement can also prevent hole breakage to occur.

摘要翻译： 拖拉机将穿孔的连续纸张送到打印位置。 位于打印位置下游的定影装置的进给力设定为大于拖拉机的进给力，以便在打印位置向连续纸张施加张力。 位于拖拉机上游的制动装置利用定影装置的进给力对连续纸张施加制动力平衡。 制动装置的制动力根据纸张的性质或环境条件而变化。 这种布置使得即使在片材进给力可能变得不稳定的情况下也可以稳定进给状态，从而实现打印，而不会偏离预定位置。 此外，这种布置也可以防止发生孔破裂。

公开(公告)号：US20050202656A1

公开(公告)日：2005-09-15

申请号：US11052861

申请日：2005-02-09

申请人： Takayuki Ito ,  Kyoichi Suguro ,  Kanna Tomiie ,  Kazuya Ouchi

发明人： Takayuki Ito ,  Kyoichi Suguro ,  Kanna Tomiie ,  Kazuya Ouchi

IPC分类号： H01L21/8238 ,  H01L21/265 ,  H01L21/324 ,  H01L21/336 ,  H01L21/425 ,  H01L21/4763 ,  H01L21/8234 ,  H01L21/84 ,  H01L27/092 ,  H01L29/78

CPC分类号： H01L21/823814 ,  H01L21/26513 ,  H01L21/2686 ,  H01L29/6659

摘要： A manufacturing method of a semiconductor device, the method including implanting impurity ions into a silicon layer and irradiating a pulsed light having a pulse width of 100 milliseconds or less and a rise time of 0.3 milliseconds or more onto the silicon layer thereby activating the impurity ions. The rise time is defined as a time interval of a leading edge between an instant at which the pulsed light starts to rise and an instant at which the pulsed light reaches a peak energy.

摘要翻译： 一种半导体器件的制造方法，所述方法包括将杂质离子注入到硅层中，并将脉冲宽度为100毫秒或更短的脉冲光和0.3毫秒或更长的上升时间照射到硅层上，从而激活杂质离子 。 上升时间被定义为脉冲光开始上升的瞬间与脉冲光达到峰值能量的瞬间之间的前沿的时间间隔。

公开(公告)号：US06770519B2

公开(公告)日：2004-08-03

申请号：US10263273

申请日：2002-10-03

申请人： Takayuki Ito ,  Kyoichi Suguro

发明人： Takayuki Ito ,  Kyoichi Suguro

IPC分类号： H01L21336

CPC分类号： H01L21/324 ,  H01L21/2686 ,  H01L29/6659

摘要： A method of semiconductor device manufacture provided includes forming a gate insulating layer upon a single crystal semiconductor substrate, forming a gate electrode made from a polycrystal conductive film upon the gate insulating layer, implanting impurity in the gate electrode and in the surface layer of the semiconductor substrate adjacent to or separate from the gate electrode, performing a first heat treatment, and performing a second heat treatment. The first heat treatment performs heat treatment at a temperature that diffuses the impurity implanted mainly in the gate electrode and controls the diffusion of the impurity implanted in the surface layer of the semiconductor substrate. The second heat treatment performs heat treatment at a higher temperature and for a shorter time than the first heat treatment, and at a temperature that activates the impurity implanted in the semiconductor substrate.

公开(公告)号：US06767796B2

公开(公告)日：2004-07-27

申请号：US09973744

申请日：2001-10-11

申请人： Masayuki Tanaka ,  Kazuaki Nakajima ,  Yoshitaka Tsunashima ,  Takayuki Ito ,  Kyoichi Suguro

发明人： Masayuki Tanaka ,  Kazuaki Nakajima ,  Yoshitaka Tsunashima ,  Takayuki Ito ,  Kyoichi Suguro

IPC分类号： H01L2128

CPC分类号： H01L21/324 ,  H01L21/28518 ,  H01L21/32053 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76864 ,  H01L21/76886 ,  H01L29/665

摘要： An aspect of the present invention provides a method of manufacturing a semiconductor device, including, forming an insulating film on a silicide layer formed at the surface of a silicon semiconductor substrate, etching the insulating film to form a contact hole in which the silicide layer is exposed, forming a metal nitride film on the bottom and side wall of the contact hole, carrying out a first heating process at 600° C. or lower on the substrate, carrying out, during the first heating process, a second heating process for 10 msec or shorter with light whose main wavelength is shorter than a light absorbing end of silicon, forming a contact conductor in the contact hole after the second heating process, and forming, on the insulating film, wiring that is electrically connected to the substrate through the contact conductor.