Laundry dryer including control panel
    111.
    发明申请
    Laundry dryer including control panel 审中-公开
    洗衣烘干机包括控制面板

    公开(公告)号:US20060207121A1

    公开(公告)日:2006-09-21

    申请号:US11377281

    申请日:2006-03-17

    Applicant: Jun Lee

    Inventor: Jun Lee

    CPC classification number: D06F39/005

    Abstract: A dryer including a control panel is provided. A dryer includes a control panel, a display mounting part formed on the control panel and on which a display device is installed, a detachable button disposed on the display mounting part, and a button holder holding the detachable button to be detachable.

    Abstract translation: 提供了包括控制面板的烘干机。 干衣机包括控制面板,形成在控制面板上并且安装有显示装置的显示器安装部分,设置在显示器安装部分上的可拆卸按钮以及保持可拆卸按钮的按钮保持器。

    Manufacturing method and apparatus of 4-fluoroethylene carbonate control system of autonomous intelligent distributed control modules
    112.
    发明申请
    Manufacturing method and apparatus of 4-fluoroethylene carbonate control system of autonomous intelligent distributed control modules 有权
    自主智能分布式控制模块的4-氟乙烯碳酸酯控制系统的制造方法和装置

    公开(公告)号:US20060167279A1

    公开(公告)日:2006-07-27

    申请号:US11072123

    申请日:2005-03-07

    CPC classification number: C07D317/36 Y02P20/142

    Abstract: Disclosed herein is a method of producing 4-fluoroethylene carbonate, in which ethylene carbonate reacts with a mixture of fluorine and nitrogen gases. The method comprises feeding a mixture gas of fluorine gas and nitrogen gas into a reactor having ethylene carbonate charged therein, so as to react the ethylene carbonate with the mixture gas of the fluorine gas and the nitrogen gas. The mixture gas fed in the reactor is regulated to have a desired bubble size while passing through a gas bubble regulating column, in which a packing for a packed column is packed. In the method, EC directly reacts with F2/N2 mixture gas to produce FEC, thus a purification process is simple and it is possible to produce FEC at high conversion efficiency and selectivity.

    Abstract translation: 本文公开了一种生产4-氟乙烯碳酸酯的方法,其中碳酸亚乙酯与氟和氮气的混合物反应。 该方法包括将氟气和氮气的混合气体进料到装有碳酸亚乙酯的反应器中,以使碳酸亚乙酯与氟气和氮气的混合气体反应。 在反应器中供给的混合气被调节为具有期望的气泡尺寸,同时通过气泡调节塔,其中填充有填料柱的填料。 在该方法中,EC直接与F 2 N 2 / N 2 N 2混合气体反应以产生FEC,因此纯化过程简单,并且可以产生高转换效率的FEC 和选择性。

    Method for removing impurities grown on a phase shift mask
    113.
    发明申请
    Method for removing impurities grown on a phase shift mask 审中-公开
    去除在相移掩模上生长的杂质的方法

    公开(公告)号:US20060137717A1

    公开(公告)日:2006-06-29

    申请号:US11292501

    申请日:2005-12-01

    Applicant: Jun Lee

    Inventor: Jun Lee

    CPC classification number: G03F1/82

    Abstract: A method for removing impurities grown on a phase shift mask. The method can advantageously control growth of impurities by further performing HF cleaning and baking after cleaning to minimize the amount of residual chemical ions generated during cleaning. Specifically, the method comprises forming a phase shift mask pattern including a phase shift film and a light-blocking film on a quartz substrate, cleaning the phase shift mask pattern formed on the quartz substrate using a solution containing sulfuric acid ions or ammonium ions, cleaning the cleaned phase shift mask pattern using an aqueous HF solution, and baking the phase shift mask pattern cleaned with the aqueous HF solution.

    Abstract translation: 一种去除在相移掩模上生长的杂质的方法。 该方法可以有利地通过在清洁之后进一步进行HF清洗和烘烤来最小化在清洁期间产生的残余化学离子的量来控制杂质生长。 具体地,该方法包括在石英衬底上形成包括相移膜和遮光膜的相移掩模图案,使用含有硫酸离子或铵离子的溶液清洗在石英衬底上形成的相移掩模图案,清洗 使用HF水溶液洗涤的相移掩模图案,并烘焙用HF水溶液清洗的相移掩模图案。

    Apparatus and method for reproducing MIDI file
    115.
    发明申请
    Apparatus and method for reproducing MIDI file 审中-公开
    用于再现MIDI文件的装置和方法

    公开(公告)号:US20060086238A1

    公开(公告)日:2006-04-27

    申请号:US11255760

    申请日:2005-10-21

    CPC classification number: G10H1/0066 G10H2230/041 G10H2250/551

    Abstract: An apparatus and a method for reproducing a MIDI file are provided. In the apparatus and the method, a point that limits reproduction of a MIDI file is determined and reproduction of the MIDI file is forcibly terminated at the determined reproduction limitation point when the MIDI file is reproduced. Therefore, non-continuous points are reduced and thus noises are reduced, so that the MIDI file can be reproduced in high quality.

    Abstract translation: 提供了一种用于再现MIDI文件的装置和方法。 在该装置和方法中,当MIDI文件被再现时,确定限制MIDI文件再现的点,并且在确定的再现限制点处强制终止MIDI文件的再现。 因此,非连续点被减少,因此噪声减小,使得可以高质量地再现MIDI文件。

    Plasma display apparatus and image processing method thereof
    116.
    发明申请
    Plasma display apparatus and image processing method thereof 审中-公开
    等离子显示装置及其图像处理方法

    公开(公告)号:US20050212727A1

    公开(公告)日:2005-09-29

    申请号:US11092736

    申请日:2005-03-28

    Applicant: Jun Lee

    Inventor: Jun Lee

    Abstract: The present invention relates to a plasma display apparatus and an image processing method thereof in which when the plasma display apparatus is driven, a picture quality is prevented from being degraded due to a line load. The plasma display apparatus for processing input video data to display an image, the apparatus includes: an inverse gamma correcting unit for correcting the video data into a previously stored gamma data, and linearly converting luminance depending on a gray level of a video signal; and a line load processor for compensating for a decreased amount of the luminance depending on an increase of a line load of a picture, which is displayed using the video data inputted from the inverse gamma correcting unit. The present invention compensates for the decreased amount of the luminance of the input video data, thereby reducing a line load effect.

    Abstract translation: 等离子体显示装置及其图像处理方法技术领域本发明涉及等离子体显示装置及其图像处理方法,其中当等离子体显示装置被驱动时,防止图像质量因线路负载而劣化。 用于处理输入视频数据以显示图像的等离子体显示装置,该装置包括:反伽马校正单元,用于将视频数据校正为先前存储的伽马数据,并根据视频信号的灰度线性地转换亮度; 以及线负载处理器,用于根据使用从反伽马校正单元输入的视频数据显示的图像的线路负载的增加来补偿亮度的减少量。 本发明补偿输入视频数据的亮度减少量,从而减少线路负载效应。

    Method of calibrating semiconductor line width
    117.
    发明申请
    Method of calibrating semiconductor line width 失效
    校准半导体线宽度的方法

    公开(公告)号:US20050144579A1

    公开(公告)日:2005-06-30

    申请号:US11024755

    申请日:2004-12-30

    Applicant: Jun Lee

    Inventor: Jun Lee

    CPC classification number: H01L22/12

    Abstract: A method of calibrating a line width in a semiconductor device including fitting line width CD (critical dimension) data to a log function by measuring the line width CD data to plot selectively according to a space size in mask design, fabrication, and correction and applying an output value of the log function as a mask fabrication line width bias by selectively inputting a space value.

    Abstract translation: 一种通过测量线宽CD数据来根据掩模设计,制造和校正中的空间尺寸选择性地绘制半导体器件中的线宽的方法,包括拟合线宽度CD(临界尺寸)数据到对数功能 通过选择性地输入空间值作为掩模制造线宽度偏置的对数函数的输出值。

    Methods of fabricating semiconductor devices
    118.
    发明申请
    Methods of fabricating semiconductor devices 失效
    制造半导体器件的方法

    公开(公告)号:US20050142834A1

    公开(公告)日:2005-06-30

    申请号:US11025377

    申请日:2004-12-28

    Applicant: Jun Lee

    Inventor: Jun Lee

    CPC classification number: H01L23/5258 H01L2924/0002 H01L2924/00

    Abstract: Disclosed are methods of fabricating a semiconductor device, by which the pad and fuse layers play their roles smoothly and to enhance a quality of a final semiconductor device. According to one example, a disclosed method includes forming an insulating layer covering a pad and a fuse on prescribed portions of a substrate, simultaneously forming a first trench exposing an anti-reflective coating layer provided as a top layer of the pad and a second trench having a portion of the insulating layer underneath over the fuse by selectively removing the first insulating layer, filling up the first and second trenches with an etch rate adjustment layer, exposing the anti-reflective coating layer to leave a portion of the etch rate adjustment layer within the second trench by selectively removing the etch rate adjustment layer, and simultaneously removing the anti-reflective coating layer and the portion of the etch rate adjustment layer from the second trench.

    Abstract translation: 公开了制造半导体器件的方法,通过该半导体器件,焊盘和熔丝层平滑地发挥其作用并提高最终半导体器件的质量。 根据一个示例,所公开的方法包括在基板的规定部分上形成覆盖焊盘和熔丝的绝缘层,同时形成露出设置为焊盘顶层的抗反射涂层的第一沟槽和第二沟槽 通过选择性地去除所述第一绝缘层而在所述熔丝下方具有绝缘层的一部分,用蚀刻速率调节层填充所述第一和第二沟槽,暴露所述抗反射涂层以留下所述蚀刻速率调节层的一部分 通过选择性地去除蚀刻速率调节层,同时从第二沟槽去除抗反射涂层和蚀刻速率调节层的一部分,在第二沟槽内。

    Method and apparatus for processing video data of display device
    119.
    发明申请
    Method and apparatus for processing video data of display device 有权
    用于处理显示装置的视频数据的方法和装置

    公开(公告)号:US20050140583A1

    公开(公告)日:2005-06-30

    申请号:US11009134

    申请日:2004-12-13

    Applicant: Dae Myoung Jun Lee

    Inventor: Dae Myoung Jun Lee

    Abstract: Discloses herein is a method and apparatus for processing video data of a display device in which dithering noise generating when a motion picture is displayed can be minimized. According to the present invention, the method of processing the video data of the display device includes the steps of comparing data of an ith frame (i is a natural number) and data of a (i+1)th frame to determine whether the data of the (i+1)th frame is a motion picture or a still image, and employing a different dithering method depending upon the determination result of the motion picture or the still image.

    Abstract translation: 本文公开了一种用于处理显示装置的视频数据的方法和装置,其中当显示运动图像时产生的抖动噪声可以被最小化。 根据本发明,处理显示装置的视频数据的方法包括以下步骤:比较第i帧(i是自然数)的数据和第(i + 1)帧的数据,以确定数据 (i + 1)帧是运动图像或静止图像,并且根据运动图像或静止图像的确定结果采用不同的抖动方法。

    Phase shift mask and fabricating method thereof
    120.
    发明申请
    Phase shift mask and fabricating method thereof 失效
    相移掩模及其制造方法

    公开(公告)号:US20050139575A1

    公开(公告)日:2005-06-30

    申请号:US11024435

    申请日:2004-12-30

    Applicant: Jun Lee

    Inventor: Jun Lee

    CPC classification number: G03F1/32 G03F1/28

    Abstract: The present invention provides a phase shift mask and fabricating method thereof, by which a critical dimension of a semiconductor pattern can be accurately formed in a manner of compensating a boundary step difference between an active area and an insulating layer. The present invention includes a transparent substrate and at least two halftone layers on the transparent substrate to have light transmittance lower than that of the transparent substrate, each comprising front and rear parts differing in thickness from each other.

    Abstract translation: 本发明提供了一种相移掩模及其制造方法,通过该相移掩模及其制造方法,可以以补偿有源区和绝缘层之间的边界阶跃差的方式精确地形成半导体图案的临界尺寸。 本发明包括透明基板和透明基板上的至少两个半色调层,其透光率低于透明基板的透光率,每个半透明层包括彼此厚度不同的前部和后部。

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