Power tool
    111.
    发明授权
    Power tool 有权
    电动工具

    公开(公告)号:US07490746B2

    公开(公告)日:2009-02-17

    申请号:US11603142

    申请日:2006-11-22

    IPC分类号: A45F5/00

    摘要: A power tool includes a hook portion having a hook holding portion, which is provided in a housing and has engaging teeth provided in the housing. A hook having a shaft portion is inserted into the hook holding portion and provided with fitting teeth meshing with the engaging teeth An elastic body is adapted to push the hook against a handle portion at all times, and a slip-off preventing part holding portion is adapted to move the hook in a direction of an axis thereof against a force of the elastic body and to cancel the mesh between the teeth to thereby enable the hook to turn.

    摘要翻译: 电动工具包括具有钩保持部分的钩部分,该钩部分设置在壳体中并且具有设置在壳体中的接合齿。 具有轴部的钩子被插入到钩保持部分中,并且设置有与接合齿啮合的配合齿。弹性体适于一直将钩推在手柄部分上,并且防脱部分保持部分是 适于使钩沿其轴线的方向抵抗弹性体的力移动并抵消齿之间的网孔,从而使钩能够转动。

    Liquid polyethercarbonatediol compound and thermoplastic polyurethane obtained therefrom
    114.
    发明申请
    Liquid polyethercarbonatediol compound and thermoplastic polyurethane obtained therefrom 审中-公开
    由其得到的液体聚醚碳酸二醇化合物和热塑性聚氨酯

    公开(公告)号:US20070155933A1

    公开(公告)日:2007-07-05

    申请号:US10586409

    申请日:2005-01-20

    IPC分类号: C08G18/00

    CPC分类号: C08G64/0208 C08G18/44

    摘要: A liquid polyethercarbonatediol compound, useful for producing a thermoplastic polyurethane having excellent weathering resistance, softness and stretchability, comprises a reaction product of (1) a carbonate-ester compound with (2) a polyetherdiol compound having, in the molecular structure thereof, structural units of -RO-(a) and structural units of —(CH2)—O-(b) and/or —CH2CH(CH3)—O-(c), in which reaction product, average molecular numbers n and m of the structural units (b) and (c), per mole of the structural units (a) satisfy the requirements: O≦n≦5, O≦m≦5 and 1

    摘要翻译: 可用于制备具有优异的耐候性,柔软性和拉伸性的热塑性聚氨酯的液体聚醚碳酸二醇化合物包括(1)碳酸酯 - 酯化合物与(2)在其分子结构中具有结构单元的聚醚二醇化合物的反应产物 的-RO-(a)和 - (CH 2)2 - (b)和/或-CH 2 CH(CH 3)的结构单元, /(C),其中每摩尔结构单元(a)的反应产物,结构单元(b)和(c)的平均分子数n和m满足以下要求:O < n <= 5,O <= m <= 5,1 <(n + m)<= 5。

    Semiconductor laser device and method for producing the same
    115.
    发明授权
    Semiconductor laser device and method for producing the same 有权
    半导体激光装置及其制造方法

    公开(公告)号:US07016385B2

    公开(公告)日:2006-03-21

    申请号:US10650047

    申请日:2003-08-28

    申请人: Masanori Watanabe

    发明人: Masanori Watanabe

    IPC分类号: H01S5/00

    摘要: A semiconductor laser device has a current injection region (A) and current non-injection regions (B) located closer to respective laser beam-emitting end faces than the current injection region is. The semiconductor laser device has an oxide layer (106A) formed at a surface of a p-type (AlpHa1-p)qIn1-qP (0≦p≦x, 0≦q≦1) intermediate band gap layer (106) in each of the current non-injection regions (B), a p-type GaAs cap layer (107) formed on the intermediate band gap layer (106) in the current injection region (A), and a p-type GaAs contact layer (125) formed on the oxide layer (106A) and the p-type GaAs cap layer (107).

    摘要翻译: 半导体激光器件具有电流注入区域(A)和位于比当前注入区域更靠近相应的激光束发射端面的电流非注入区域(B)。 半导体激光器件具有形成在p型(Al 1 H 1-p N)q L表面的氧化物层(106A) 在每个电流非注入区域(B)中的中间带隙层(106)中,在中间带隙层(106)中,在中间带隙层(106)中,在一个1-q个P(0 <= p <= x,0 <= q < 形成在电流注入区域(A)中的中间带隙层(106)上的p型GaAs覆盖层(107)和形成在氧化物层(106A)上的p型GaAs接触层(125)和 p型GaAs覆盖层(107)。

    Power tool
    117.
    发明授权
    Power tool 有权
    电动工具

    公开(公告)号:US06905052B2

    公开(公告)日:2005-06-14

    申请号:US10726495

    申请日:2003-12-04

    摘要: A power tool includes a hook portion comprising a hook holding portion 20, which is provided in a housing 1 and has engaging teeth 47 provided in a housing 1, and also comprising a hook 2 having shaft portion 30, which is inserted into the hook holding portion 20 and provided with fitting teeth 31 meshing with the engaging teeth 47, an elastic body 27 adapted to push the hook 2 against a handle portion at all times, and a slip-off preventing part holding portion adapted to move the hook 2 in a direction of an axis thereof against a force of the elastic body 2 and to cancel the mesh between the teeth to thereby enable the hook 2 to turn.

    摘要翻译: 电动工具包括钩部,其包括钩保持部分20,其设置在壳体1中并且具有设置在壳体1中的接合齿47,并且还包括具有轴部30的钩2,该钩2插入到钩保持件 部分20设置有与接合齿47啮合的配合齿31,适于将钩2始终推靠在手柄部分上的弹性体27和适于将钩2移动到一个止挡部分 其轴线的方向抵抗弹性体2的力并抵消齿之间的啮合,从而使钩2转动。

    Compound semiconductor surface stabilizing method, semiconductor laser device fabricating method using the stabilizing method, and semiconductor device
    118.
    发明授权
    Compound semiconductor surface stabilizing method, semiconductor laser device fabricating method using the stabilizing method, and semiconductor device 失效
    化合物半导体表面稳定化方法,使用稳定化方法的半导体激光器件制造方法以及半导体器件

    公开(公告)号:US06674095B1

    公开(公告)日:2004-01-06

    申请号:US09584380

    申请日:2000-05-31

    申请人: Masanori Watanabe

    发明人: Masanori Watanabe

    IPC分类号: H01L29227

    摘要: In a compound semiconductor surface stabilizing method, a compound semiconductor is immersed in a solution containing sulfur ions, and then, the compound semiconductor is immersed in a solution containing cations, which react with sulfur to form a sulfide. These immersing steps form a sulfur layer and a sulfide layer in this order on a surface of the compound semiconductor.

    摘要翻译: 在化合物半导体表面稳定化方法中,将化合物半导体浸渍在含有硫离子的溶液中,然后将化合物半导体浸渍在含有与硫反应形成硫化物的阳离子的溶液中。 这些浸渍步骤在化合物半导体的表面上依次形成硫层和硫化物层。

    Semiconductor laser and fabricating method therefor
    119.
    发明授权
    Semiconductor laser and fabricating method therefor 有权
    半导体激光器及其制造方法

    公开(公告)号:US06670202B2

    公开(公告)日:2003-12-30

    申请号:US10234326

    申请日:2002-09-05

    申请人: Masanori Watanabe

    发明人: Masanori Watanabe

    IPC分类号: H01L2100

    CPC分类号: H01S5/162 H01S5/22

    摘要: At least a lower cladding layer, an active layer for generating laser light, a first upper cladding layer, an etching stopper layer and a second upper cladding layer are stacked on a substrate. An impurity for restraining laser light absorption is diffused into the second upper cladding layer along a region where a light-emitting end surface is to be formed, under a condition that allows the etching stopper layer to maintain a function of stopping etching for the second upper cladding layer (First annealing process). Etching is performed until the etching stopper layer is reached such that the second upper cladding layer is left in a ridge shape. The impurity in the second upper cladding layer is re-diffused into the active layer to thereby cause local intermixing of the active layer in a portion extending along the light-emitting end surface and located just under the ridge (Second annealing process).

    摘要翻译: 至少下包层,用于产生激光的有源层,第一上覆层,蚀刻阻挡层和第二上包覆层堆叠在基板上。 用于抑制激光吸收的杂质沿着要形成发光端面的区域在允许蚀刻停止层保持停止第二上部蚀刻功能的条件下扩散到第二上部包层中 包层(第一退火工艺)。 进行蚀刻直到达到蚀刻阻挡层,使得第二上部包层保持为脊状。 第二上包覆层中的杂质被再扩散到有源层中,从而引起有源层在沿着发光端面延伸并位于脊下方的部分(第二退火工艺)中的局部混合。