摘要:
The present invention provides a projection type image display device capable of affording a bright display of a high saturation and capable of ensuring a high reliability of optical parts. The projection type image display device is provided with a color synthesizer for color-synthesizing modulated and polarized light of red light, green light, and blue light, outputted from an image display element. The color synthesizer has an optical characteristic such that the transmittance including reflection by a reflecting film in the interior of the color synthesizer becomes highest for the polarized light of blue light out of the modulated and polarized light of red light, that of green light, and that of blue light. The color synthesizer also has an optical characteristic such that the quantity of the polarized light of blue light outputted becomes largest out of the modulated and polarized light of red light, green light, and blue light.
摘要:
A projector light source which facilitates molding of a reflector for obtaining a complicated reflecting surface and provides an improved cooling efficiency, which is characterized by molding the reflector of the light source using heat resistant plastic mixed with a high heat conductive material, whereby a molding accuracy is drastically improved compared to a heat resistant glass reflector, and a highly efficient light source is implemented by increasing a degree of design freedom using a high-order non-spherical reflecting surface. Furthermore, heat conductivity is increased by the use of a high heat conductive material for the reflector and heat dissipation to an outside is facilitated.
摘要:
A projection optical unit has two lens groups. A first projection optical unit disposed closest to an image display element, temporarily forms a first enlarged image (magnification: M1) at the image display element side, rather than at a second projection optical unit. The first enlarged image is subsequently projected in an enlarged form (magnification: M2, wherein M2>M1) onto a screen via the second projection optical unit. A field lens group having positive refractive power is disposed between the first projection optical unit and the second projection optical unit. Consequently, the relationship between F2, which is the F-value of the second projection optical unit, and F1, which is the F-value of the first projection optical unit, becomes F2=F1/M1, whereby it is possible to realize very-wide-angle imaging at a field angle exceeding 90 degrees.
摘要:
For obtaining both high brightness under condition of small-sized and simplified structure and suppression of increase in temperature of liquid crystal display elements and polarizing elements, in a liquid crystal display apparatus, comprising: a liquid crystal display element 2 for converting light from a light source into display picture depending on a driving signal; an optical projection system 1b containing a first optical element 1a and for projecting said light signal toward an object of projection; exit side polarizing elements 3b; a holding member 6 for holding them with the liquid crystal display element 2; and cooling medium 5; incident side polarizing elements 3a, wherein, a space is defined by either one of the incident side polarizing elements 3a and the liquid crystal display element 2, the first optical element 1a, between the liquid crystal display element 2 and the first optical element 1a, and the holding member 6, and said space is filled up with the cooling medium 5.
摘要:
A projection apparatus includes a polarizing converter which converts a light beam from a light source to a polarized beam; a color separator which separates the polarized beam into color beams based on wavelength; first through third optical path modifiers each of which modifies an optical path associated with a corresponding one of the color beams; first through third polarized light separators, each of which receives a corresponding one of the first through third color beams from the optical path modifiers; first through third reflective image display elements, each of which receives a corresponding one of the first through third color beams from the corresponding polarized light separator and provides a reflected beam to the corresponding polarized light separator; a color combiner which combines the reflected beams from the reflective image display elements of the polarized light separator; and a projection lens which projects a color image.
摘要:
When a projection lens system used for a rear projection type image display apparatus has a first lens group having an aspherical lens surface, a second lens group, a third lens group sharing almost all the positive refractive power of the overall system, a fourth lens group having an aspherical lens surface, a fifth lens group, and a sixth lens group including a lens having a profile of aspherical surface in which the concave surface thereof faces the screen side and the refractive power in the marginal area is weaker than the refractive power around the optical axis, a projection lens system having a large aperture ratio (low F-number), high focus, wide field angle, and sufficient marginal light amount ratio can be realized at a low cost. When a predetermined opening portion is formed in the projection lens and lens barrel, the lens elements are cooled by air suction and exhaust and the lowering of the lens performance due to temperature change can be prevented. When a flange is arranged in a suitable location of the opening portion, entry of a foreign material from the opening portion and light leakage from the inside are prevented and the contrast performance of the projection type image display apparatus can be prevented from lowering.
摘要:
To provide a super high-speed heterojunction bipolar transistor, a semiconductor device including such a heterojunction bipolar transistor has a structure wherein a subcollector layer, collector layer, base layer, emitter layer (InGaP layer) and emitter cap layer are successively formed in predetermined shapes a surface of a semi-insulating GaAs substrate, an inner edge part of a base electrode overlaps a periphery of the emitter layer, and the base electrode is electrically connected to the base layer by an alloy layer formed by alloying the emitter layer under the base electrode. The emitter layer is selectively formed on the base layer. The base electrode extends from the peripheral part of the emitter layer across the base layer, and the alloy layer extends to a midway depth of the base layer. The edge of the base layer is situated further inside than the outer edge of the base electrode.
摘要:
The projection image display apparatus includes a plurality of image generating sources for generating three primary colors, including red, green, blue image light, respectively, and a projection lens containing a plurality of lens elements provided in correspondence with each of said image generating sources for enlarging/projecting images displayed by the image generating sources onto a screen. The projection lens corresponding to the red image generating source includes a light transmitter that satisfies the condition: TRS
摘要:
A projection display apparatus including an optical modulator for modulating an incident light from a light source, and a projection lens device for projecting the light modulated by the optical modulator. The optical modulator includes a liquid crystal panel, a cooling liquid filled up at least within a space defined between the liquid crystal panel and a lens of the projection lens device which is located closest to a light source side, and a polarizing plate. The polarizing plate is positioned in the space so that opposite surfaces of the polarizing plate contact the cooling liquid.
摘要:
The present invention relates to a contact structure not only for a semiconductor device having a hetero-junction bipolar transistor or a hetero-insulated gate field effect transistor but also for semiconductor devices at large. In a semiconductor layer of a polycrystalline or amorphous undoped III-V compound semiconductor or an alloy thereof, a through hole is formed for contact. The size of the through hole is set to permit exposure of at least part of a first conductor layer and a dielectric layer, such as an Si compound, present around the first conductor layer, and a second conductor layer is formed within the through hole so as to contact the first conductor layer. Since the semiconductor layer can be subjected to a selective dry etching for the dielectric layer, the dielectric layer is not etched at the time of forming the above through hole in the semiconductor layer. As a result an electric short-circuit of the second conductor layer with a single crystal semiconductor layer which underlies the dielectric layer can be prevented.