Abstract:
Described are embodiments of stacked field effect transistor (FET) switch having a plurality of FET devices coupled in series to form an FET device stack. A control circuit provides biasing voltages to the gate, source, and drain contacts of each of the plurality of FET devices to switch the FET device stack to and from a closed state and an open state. In the open state, the gate contacts of each of the plurality of FET devices are biased by the control circuit at the second voltage. To prevent activation in the open state, the control circuit biases the drain contacts and source contacts of each of the plurality of FET devices at the first voltage. The first voltage is positive relative to a reference voltage, such as ground, while the second voltage is non-negative relative to the reference voltage but less than the first voltage.
Abstract:
A user equipment (UE) front end (FE) that is adapted for multiband simultaneous transmission and reception is provided. The UE FE includes a first multi-filter device having a transmit (TX) band-pass filter adapted to pass a first TX signal band associated with a first radio access technology type, and a receive (RX) band-pass filter adapted to pass a second RX signal band associated with a second radio access technology type. The UE FE also includes a second multi-filter device having a TX band-pass filter adapted to pass a second TX signal band associated with the second radio access technology type and an RX band-pass filter adapted to pass the first RX signal band associated with the first radio access technology type. The first radio access technology type and the second radio access technology type are preferably long term evolution (LTE) and code division multiple access 2000 (CDMA2000), respectively, or vice versa.
Abstract:
The present invention is design for testability (DFT) circuitry used with RF transmitter circuitry to enable RF parameter adjustments, which provide compliance with requirements, to configure the RF transmitter circuitry for a particular application or range of applications, and to permanently store adjustment information, configuration information, or both, in non-volatile memory. The DFT circuitry and the RF transmitter circuitry may be used to form a standard RF module, which can be provided to a number of customers for use in a number of applications. The standard RF module may be adjusted, configured, or both during manufacturing, which may eliminate calibrations, adjustments, or configurations by customers.
Abstract:
A transmitter includes a polar modulator that creates phase and amplitude signals which in turn drive a power amplifier. To compensate for AM to PM conversion of the amplitude signal into the amplified signal, a compensation signal is generated from the amplitude signal and combined with the phase signal such that when amplified, the compensation signal cancels the AM to PM conversion. The compensation signal may have an offset term, a linear term, a quadratic term, and a cubic term. A second embodiment comprises a technique by which AM to AM conversion may concurrently be addressed using a second compensation signal.
Abstract:
Micro-Electro-Mechanical Systems (MEMS) resonator designs having support structures that minimize or substantially reduce anchor losses, thereby improving a quality factor (Q) of the MEMS resonators, are provided. In general, a MEMS resonator includes a resonator body connected to anchors via support structures. The anchors are connected to or are part of a substrate on which the MEMS resonator is formed. The support structures operate to support the resonator body in free space to enable vibration. The support structures are designed to minimize or substantially reduce energy loss through the anchors into the substrate.
Abstract:
A system and method for detecting and correcting over-current and/or over-voltage conditions in power amplifier circuitry in a transmit chain of a mobile terminal are provided. In general, over-current detection and correction circuitry combines a current detection signal indicative of a current provided to or drained by the power amplifier circuitry during ramp-up for a transmit burst and a substantially inverse current ramping profile to provide a first constant value. The first constant value is compared to a current threshold or limit value to determine whether an over-current condition exists. If an over-current condition exists, the over-current detection and correction circuitry operates to reduce the output power of the power amplifier circuitry during ramp-up for the transmit burst to correct for the over-current condition. In a similar manner, over-voltage detection circuitry operates to detect and correct over-voltage conditions during ramp-up for the transmit burst.
Abstract:
A signal line sharing protocol and hardware permit control of a remotely located active device configured to provide different load configurations to an antenna. As an example, the communication system may include a master device. The master device may include a general purpose output and a radio frequency port. The communication system may further include a first duplexer and a second duplexer. The first duplexer may include a first port, a second port, and a third port, where the second port is coupled to the radio frequency port and the third port is coupled to the general purpose output of the master device. The second duplexer may include a first port, a second port, and a third port, where the first port of the second duplexer is in communication with the first port of the first duplexer, wherein the second port is coupled to an antenna, and where the third port is in communication with a slave device. The slave device may be coupled to the antenna. In response to commencement of a command from the master device, the slave device may clamp the antenna to ground.
Abstract:
The present invention relates to providing an enhancement-mode (e-mode) Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) with a complementary depletion-mode (d-mode) FET on a common group III-V substrate. The depletion mode FET may be another MOSFET, a MEtal-Semiconductor FET (MESFET), a High Electron Mobility Transistor (HEMT), or like FET structure. In particular, the e-mode MOSFET includes a gate structure that resides between source and drain structures on a transistor body. The gate structure includes a gate contact that is separated from the transistor body by a gate oxide. The gate oxide is an oxidized material that includes Indium and Phosphorus. The gate oxide is formed beneath the gate contact.
Abstract:
The present invention is a latching electrostatic discharge (ESD) protection circuit that enables and latches an ESD clamping circuit upon an ESD event, and disables and un-latches the ESD clamping circuit upon either a drop in the DC supply voltage below a defined threshold or a time-out. The time-out protects against effects of inadvertent latching or any anomaly in which the latching ESD clamping circuit does not un-latch. An ESD event is a voltage spike between the DC supply voltage and ground wherein the ESD clamping circuit applies a low impedance between the DC supply voltage and ground to dissipate the energy contained in the voltage spike, thereby protecting adjacent circuitry.
Abstract:
The present invention is a switching power supply that switches (dithers) between at least two switching frequencies without introducing a ripple signal at the dithering frequency, which is based on the time duration of a dithering cycle. In one embodiment of the present invention, an average current in an energy transfer element, such as an inductive element, during operation using one switching frequency is regulated to be approximately equal to the average current during operation using any other switching frequency. The average current may be regulated by controlling the durations of transition periods between operating using one switching frequency and operating using another switching frequency. By maintaining a constant average current while operating using different switching frequencies, dithering frequency ripple may be significantly reduced or eliminated.